DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BC869 PNP medium power transistor; 20 V, 1 A Product data sheet Supersedes data of 2003 Dec 02 2004 Nov 08 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC869 FEATURES QUICK REFERENCE DATA • High current SYMBOL • Three current gain selections VCEO collector-emitter voltage − −20 V IC collector current (DC) − −1 A APPLICATIONS ICM peak collector current − −2 A • Linear voltage regulators hFE DC current gain • 1.2 W total power dissipation. PARAMETER MIN. MAX. UNIT • High side switch BC869 85 375 − • Supply line switch BC869-16 100 250 − • MOSFET driver BC869-25 160 375 − • Audio (pre-) amplifier. DESCRIPTION PNP medium power transistor (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW PACKAGE TYPE NUMBER MARKING PHILIPS EIAJ BC869 SOT89 SC-62 CEC BC869-16 SOT89 SC-62 CGC BC869-25 SOT89 SC-62 CHC SIMPLIFIED OUTLINE, SYMBOL AND PINNING PINNING TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PIN BC869 2 3 3 2 1 1 sym079 2004 Nov 08 2 DESCRIPTION 1 emitter 2 collector 3 base NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC869 ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BC869 SC-62 BC869-16 DESCRIPTION VERSION plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 BC869-25 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −32 V VCEO collector-emitter voltage open base − −20 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −1 A ICM peak collector current − −2 A IBM peak base current − −200 mA Ptot total power dissipation notes 1 and 2 − 0.5 W notes 1 and 3 − 0.85 W notes 1 and 4 − 1.2 W Tamb ≤ 25 °C Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C Notes 1. Refer to SOT89 standard mounting conditions. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint. 3. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2. 4. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. 2004 Nov 08 3 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC869 MLE323 1.6 handbook, halfpage Ptot (W) (1) 1.2 (2) 0.8 (3) 0.4 0 -65 -5 55 115 175 Tamb (°C) (1) FR4 PCB; 6 cm2 mounting pad for collector. (2) FR4 PCB; 1 cm2 mounting pad for collector. (3) Standard footprint. Fig.1 Power derating curves. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Rth(j-s) PARAMETER CONDITIONS VALUE UNIT notes 1 and 2 250 K/W notes 1 and 3 147 K/W notes 1 and 4 104 K/W 20 K/W Tamb ≤ 25 °C thermal resistance from junction to ambient thermal resistance from junction to solder point Tamb ≤ 25 °C Notes 1. Refer to SOT89 standard mounting conditions. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint. 3. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2. 4. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. 2004 Nov 08 4 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC869 MLE324 103 handbook, full pagewidth Zth (K/W) (1) (2) (3) (4) 102 (5) (6) 10 (7) (8) (9) δ= P (10) 1 tp T t tp T 10−1 10−5 10−4 10−3 10−2 10−1 102 10 1 tp (s) 103 Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.2 Transient thermal impedance as a function of pulse time; typical values. 32 mm handbook, halfpage 2 mm 2.8 mm 10 mm 3.5 mm 40 mm 1.8 mm 1.1 mm 10 mm 2.5 mm 1 mm 0.5 mm 0.7 mm 0.8 mm 5 mm 3.7 mm 3.96 mm MLE321 1.6 mm MLE322 Fig.3 SOT89 standard mounting conditions for reflow soldering. 2004 Nov 08 Fig.4 5 Printed-circuit board for SOT89; mounting pad for collector 1 cm2. NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC869 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX. UNIT VCB = −25 V; IE = 0 A − − −100 nA VCB = −25 V; IE = 0 A − − −10 μA − − −100 nA VCE = −10 V; IC = −5 mA 50 − − VCE = −1 V; IC = −500 mA 85 − 375 VCE = −1 V; IC = −1 A 60 − − 100 − 250 160 − 375 − − −500 mV VCE = −10 V; IC = −5 mA − − −700 mV IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A hFE DC current gain BC869 BC869−16 VCE = −1 V; IC = −500 mA BC869−25 VCE = −1 V; IC = −500 mA VCEsat collector-emitter saturation voltage IC = −1 A; IB = −100 mA VBE base-emitter voltage VCE = −1 V; IC = −1 A − − −1 V Cc collector capacitance IE = ie = 0 A; VCB = −10 V; f = 1 MHz − 28 − pF fT transition frequency VCE = −5 V; IC = −50 mA; f = 100 MHz 40 140 − MHz 2004 Nov 08 6 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC869 MLE317 −2.4 IC (A) −2.0 MLE314 −1 halfpage handbook, handbook, halfpage (1) −1.6 (2) VBE (3) (V) (4) (5) (6) −1.2 (7) (8) −0.8 (9) −0.4 (10) 0 −1 0 −2 −3 −4 −10−1 −10−4 −5 VCE (V) −10−3 −10−2 −10−1 −1 IC (A) −10 BC869-16. (1) IB = −18 mA. (2) IB = −16.2 mA. (3) IB = −14.4 mA. (4) IB = −12.6 mA. Fig.5 (5) IB = −10.8 mA. (6) IB = −9.0 mA. (7) IB = −7.2 mA. (8) IB = −5.4 mA. (9) IB = −3.6 mA. (10) IB = −1.8 mA. BC869-16. VCE = −1 V. Collector current as a function of collector-emitter voltage; typical values. Fig.6 MLE319 103 halfpage handbook, Base-emitter voltage as a function of collector current; typical values. MLE320 −1 handbook, halfpage VCEsat hFE (V) −10−1 −10−2 102 −10−4 −10−3 −10−2 −10−1 −1 −10−3 −10−4 −10 IC (A) −10−2 −10−1 −1 −10 IC (A) BC869-16. VCE = −1 V. BC869-16. Fig.7 Fig.8 IC/IB = 10. DC current gain as a function of collector current; typical values. 2004 Nov 08 −10−3 7 Collector-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC869 MLE313 −2.4 C (A) −2.0 MLE318 −1 halfpage handbook, handbook, halfpage I (1) (2) (3) VBE (V) (4) −1.6 (5) (6) −1.2 (7) (8) −0.8 (9) −0.4 (10) 0 −1 0 −2 −3 BC869-25. (1) (2) (3) (4) IB = −12 mA. IB = −10.8 mA. IB = −9.6 mA. IB = −8.4 mA. Fig.9 (5) (6) (7) (8) IB = −7.2 mA. IB = −6.0 mA. IB = −4.8 mA. IB = −3.6 mA. −4 −10−1 −10−4 −5 VCE (V) −10−2 −10−1 −1 IC (A) −10 (9) IB = −2.4 mA. (10) IB = −1.2 mA. BC869-25. VCE = −1 V. Collector current as a function of collector-emitter voltage; typical values. Fig.10 Base-emitter voltage as function of collector current; typical values. MLE315 103 halfpage handbook, −10−3 MLE316 −1 handbook, halfpage VCEsat (V) hFE −10−1 −10−2 102 −10−4 −10−3 −10−2 −10−1 −10−3 −10−4 −1 −10 IC (mA) −10−3 −10−2 −10−1 −1 −10 IC (A) BC869-25. VCE = −1 V. BC869-25. IC/IB = 10. Fig.11 DC current gain as a function of collector current; typical values. Fig.12 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Nov 08 8 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC869 PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION SOT89 2004 Nov 08 REFERENCES IEC JEDEC JEITA TO-243 SC-62 9 EUROPEAN PROJECTION ISSUE DATE 04-08-03 06-03-16 NXP Semiconductors Product data sheet PNP medium power transistor; 20 V, 1 A BC869 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. 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Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Nov 08 10 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/06/pp11 Date of release: 2004 Nov 08 Document order number: 9397 750 13861