PHILIPS BC869-16

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
BC869
PNP medium power transistor;
20 V, 1 A
Product data sheet
Supersedes data of 2003 Dec 02
2004 Nov 08
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC869
FEATURES
QUICK REFERENCE DATA
• High current
SYMBOL
• Three current gain selections
VCEO
collector-emitter
voltage
−
−20
V
IC
collector current (DC)
−
−1
A
APPLICATIONS
ICM
peak collector current −
−2
A
• Linear voltage regulators
hFE
DC current gain
• 1.2 W total power dissipation.
PARAMETER
MIN. MAX. UNIT
• High side switch
BC869
85
375
−
• Supply line switch
BC869-16
100
250
−
• MOSFET driver
BC869-25
160
375
−
• Audio (pre-) amplifier.
DESCRIPTION
PNP medium power transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
MARKING
PHILIPS
EIAJ
BC869
SOT89
SC-62
CEC
BC869-16
SOT89
SC-62
CGC
BC869-25
SOT89
SC-62
CHC
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER
SIMPLIFIED OUTLINE AND SYMBOL
PIN
BC869
2
3
3
2
1
1
sym079
2004 Nov 08
2
DESCRIPTION
1
emitter
2
collector
3
base
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC869
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BC869
SC-62
BC869-16
DESCRIPTION
VERSION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
SOT89
BC869-25
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−32
V
VCEO
collector-emitter voltage
open base
−
−20
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−1
A
ICM
peak collector current
−
−2
A
IBM
peak base current
−
−200
mA
Ptot
total power dissipation
notes 1 and 2
−
0.5
W
notes 1 and 3
−
0.85
W
notes 1 and 4
−
1.2
W
Tamb ≤ 25 °C
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
ambient temperature
−65
+150
°C
Notes
1. Refer to SOT89 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.
3. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
4. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
2004 Nov 08
3
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC869
MLE323
1.6
handbook, halfpage
Ptot
(W)
(1)
1.2
(2)
0.8
(3)
0.4
0
-65
-5
55
115
175
Tamb (°C)
(1) FR4 PCB; 6 cm2 mounting pad for collector.
(2) FR4 PCB; 1 cm2 mounting pad for collector.
(3) Standard footprint.
Fig.1 Power derating curves.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
Rth(j-s)
PARAMETER
CONDITIONS
VALUE
UNIT
notes 1 and 2
250
K/W
notes 1 and 3
147
K/W
notes 1 and 4
104
K/W
20
K/W
Tamb ≤ 25 °C
thermal resistance from junction to ambient
thermal resistance from junction to solder point
Tamb ≤ 25 °C
Notes
1. Refer to SOT89 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.
3. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
4. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
2004 Nov 08
4
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC869
MLE324
103
handbook, full pagewidth
Zth
(K/W)
(1)
(2)
(3)
(4)
102
(5)
(6)
10
(7)
(8)
(9)
δ=
P
(10)
1
tp
T
t
tp
T
10−1
10−5
10−4
10−3
10−2
10−1
102
10
1
tp (s)
103
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Fig.2 Transient thermal impedance as a function of pulse time; typical values.
32 mm
handbook, halfpage
2 mm
2.8 mm
10 mm
3.5 mm
40 mm
1.8 mm
1.1
mm
10 mm
2.5 mm
1 mm
0.5 mm
0.7 mm
0.8 mm
5 mm
3.7 mm
3.96 mm
MLE321
1.6 mm
MLE322
Fig.3
SOT89 standard mounting conditions for
reflow soldering.
2004 Nov 08
Fig.4
5
Printed-circuit board for SOT89; mounting
pad for collector 1 cm2.
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC869
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector-base cut-off current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCB = −25 V; IE = 0 A
−
−
−100
nA
VCB = −25 V; IE = 0 A
−
−
−10
μA
−
−
−100
nA
VCE = −10 V; IC = −5 mA
50
−
−
VCE = −1 V; IC = −500 mA
85
−
375
VCE = −1 V; IC = −1 A
60
−
−
100
−
250
160
−
375
−
−
−500
mV
VCE = −10 V; IC = −5 mA
−
−
−700
mV
IEBO
emitter-base cut-off current
VEB = −5 V; IC = 0 A
hFE
DC current gain
BC869
BC869−16
VCE = −1 V; IC = −500 mA
BC869−25
VCE = −1 V; IC = −500 mA
VCEsat
collector-emitter saturation voltage IC = −1 A; IB = −100 mA
VBE
base-emitter voltage
VCE = −1 V; IC = −1 A
−
−
−1
V
Cc
collector capacitance
IE = ie = 0 A; VCB = −10 V;
f = 1 MHz
−
28
−
pF
fT
transition frequency
VCE = −5 V; IC = −50 mA;
f = 100 MHz
40
140
−
MHz
2004 Nov 08
6
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC869
MLE317
−2.4
IC
(A)
−2.0
MLE314
−1 halfpage
handbook,
handbook, halfpage
(1)
−1.6
(2)
VBE
(3)
(V)
(4)
(5)
(6)
−1.2
(7)
(8)
−0.8
(9)
−0.4
(10)
0
−1
0
−2
−3
−4
−10−1
−10−4
−5
VCE (V)
−10−3
−10−2
−10−1
−1
IC (A)
−10
BC869-16.
(1) IB = −18 mA.
(2) IB = −16.2 mA.
(3) IB = −14.4 mA.
(4) IB = −12.6 mA.
Fig.5
(5) IB = −10.8 mA.
(6) IB = −9.0 mA.
(7) IB = −7.2 mA.
(8) IB = −5.4 mA.
(9) IB = −3.6 mA.
(10) IB = −1.8 mA.
BC869-16.
VCE = −1 V.
Collector current as a function of
collector-emitter voltage; typical values.
Fig.6
MLE319
103 halfpage
handbook,
Base-emitter voltage as a function of
collector current; typical values.
MLE320
−1
handbook, halfpage
VCEsat
hFE
(V)
−10−1
−10−2
102
−10−4
−10−3
−10−2
−10−1
−1
−10−3
−10−4
−10
IC (A)
−10−2
−10−1
−1
−10
IC (A)
BC869-16.
VCE = −1 V.
BC869-16.
Fig.7
Fig.8
IC/IB = 10.
DC current gain as a function of collector
current; typical values.
2004 Nov 08
−10−3
7
Collector-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC869
MLE313
−2.4
C
(A)
−2.0
MLE318
−1 halfpage
handbook,
handbook,
halfpage
I
(1)
(2)
(3)
VBE
(V)
(4)
−1.6
(5)
(6)
−1.2
(7)
(8)
−0.8
(9)
−0.4
(10)
0
−1
0
−2
−3
BC869-25.
(1)
(2)
(3)
(4)
IB = −12 mA.
IB = −10.8 mA.
IB = −9.6 mA.
IB = −8.4 mA.
Fig.9
(5)
(6)
(7)
(8)
IB = −7.2 mA.
IB = −6.0 mA.
IB = −4.8 mA.
IB = −3.6 mA.
−4
−10−1
−10−4
−5
VCE (V)
−10−2
−10−1
−1
IC (A)
−10
(9) IB = −2.4 mA.
(10) IB = −1.2 mA.
BC869-25.
VCE = −1 V.
Collector current as a function of
collector-emitter voltage; typical values.
Fig.10 Base-emitter voltage as function of collector
current; typical values.
MLE315
103 halfpage
handbook,
−10−3
MLE316
−1
handbook, halfpage
VCEsat
(V)
hFE
−10−1
−10−2
102
−10−4
−10−3
−10−2
−10−1
−10−3
−10−4
−1
−10
IC (mA)
−10−3
−10−2
−10−1
−1
−10
IC (A)
BC869-25.
VCE = −1 V.
BC869-25.
IC/IB = 10.
Fig.11 DC current gain as a function of collector
current; typical values.
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Nov 08
8
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC869
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
bp3
E
HE
Lp
1
2
3
c
bp2
w M
bp1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp1
bp2
bp3
c
D
E
e
e1
HE
Lp
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
1.2
0.8
0.13
OUTLINE
VERSION
SOT89
2004 Nov 08
REFERENCES
IEC
JEDEC
JEITA
TO-243
SC-62
9
EUROPEAN
PROJECTION
ISSUE DATE
04-08-03
06-03-16
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
BC869
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Nov 08
10
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R75/06/pp11
Date of release: 2004 Nov 08
Document order number: 9397 750 13861