AOT11C60/AOB11C60/AOTF11C60 600V,11A N-Channel MOSFET General Description Product Summary The AOT11C60 & AOB11C60 & AOTF11C60 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max 700 IDM 80A RDS(ON),max < 0.44Ω Qg,typ 30nC Eoss @ 400V 5.1µJ 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT11C60L & AOB11C60L & AOTF11C60L Top View TO-220 TO-263 D2PAK TO-220F D D G AOT11C60 D S G AOTF11C60 D G Continuous Drain Current VGS TC=25°C TC=100°C S AOB11C60 Absolute Maximum Ratings TA=25°C unless otherwise noted AOT11C60/AOB11C60 Parameter Symbol Drain-Source Voltage VDS 600 Gate-Source Voltage G S S AOTF11C60 ±30 11 ID Units V V 11* 9 9* A Pulsed Drain Current C IDM 80 Avalanche Current C,J IAR 11 A Repetitive avalanche energy C,J EAR 60 mJ Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC EAS 750 100 20 mJ dv/dt W 0.4 -55 to 150 W/ oC °C 300 °C 2.2 Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Case-to-sink A RθCS Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.3.0: Auguest 2014 50 278 PD AOT11C60/AOB11C60 65 0.5 0.45 www.aosmd.com V/ns AOTF11C60 65 -2.5 Units °C/W °C/W °C/W Page 1 of 6 AOT11C60/AOB11C60/AOTF11C60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 700 V ID=250µA, VGS=0V 0.55 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5.5A gFS Forward Transconductance VDS=40V, ID=5.5A 12 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 ±100 3 µA 4 5 nΑ V 0.36 0.44 Ω 1 V S IS Maximum Body-Diode Continuous Current 11 A ISM Maximum Body-Diode Pulsed Current C 80 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related H VGS=0V, VDS=100V, f=1MHz 2000 pF 84 pF 60 pF 107 pF VGS=0V, VDS=0 to 480V, f=1MHz Crss Effective output capacitance, time related I Reverse Transfer Capacitance VGS=0V, VDS=100V, f=1MHz 2.8 pF Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 3.5 Ω Co(tr) SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr 30 VGS=10V, VDS=480V, ID=11A 42 nC 14 nC 4 nC 50 ns VGS=10V, VDS=300V, ID=11A, RG=25Ω 50 ns 70 ns 32 ns IF=11A,dI/dt=100A/µs,VDS=100V 485 Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/µs,VDS=100V 7.2 ns µC Body Diode Reverse Recovery Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=5A, VDD=150V, RG=25Ω, Starting TJ=25°C. H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS. I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS. J. L=1.0mH, VDD=150V, RG=25Ω, Starting TJ=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.3.0: Auguest 2014 www.aosmd.com Page 2 of 6 AOT11C60/AOB11C60/AOTF11C60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 8V -55°C VDS=40V 10V 24 7V 10 ID(A) ID (A) 18 6.5V 125°C 12 1 6V 6 25°C VGS=5.5V 0 0 5 10 15 20 25 0.1 30 2 4 VDS (Volts) Fig 1: On-Region Characteristics 1.0 8 10 Normalized On-Resistance 3 0.8 RDS(ON) (Ω) 6 VGS(Volts) Figure 2: Transfer Characteristics 0.6 VGS=10V 0.4 0.2 5 10 15 20 VGS=10V ID=5.5A 2 1.5 1 0.5 0 -100 0.0 0 2.5 25 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1E+02 1.2 40 1E+00 IS (A) BVDSS (Normalized) 1E+01 1.1 1 125°C 1E-01 25°C 1E-02 0.9 1E-03 0.8 -100 1E-04 -50 0 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temperature Rev.3.0: Auguest 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOT11C60/AOB11C60/AOTF11C60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 Ciss VDS=480V ID=11A 1000 Capacitance (pF) VGS (Volts) 12 9 6 Coss 100 10 Crss 3 1 0 0 10 20 30 40 0.1 50 15 10 12 Current rating ID(A) 12 Eoss(uJ) 8 6 Eoss 4 10 100 1000 9 6 3 2 0 0 0 100 200 300 400 500 600 0 25 50 75 100 125 150 TCASE (°C) Figure 10: Current De-rating (Note B) VDS (Volts) Figure 9: Coss stored Energy 100 100 10µs RDS(ON) limited 10 10 100µs 1ms DC 1 10ms 0.1 10µs RDS(ON) limited ID (Amps) ID (Amps) 1 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100µs 1ms 1 10ms DC 0.1s 0.1 1s TJ(Max)=150°C TC=25°C TJ(Max)=150°C TC=25°C 0.01 0.01 1 10 100 1000 VDS (Volts) Figure 11: Maximum Forward Biased Safe Operating Area for AOT(B)11C60 (Note F) Rev.3.0: Auguest 2014 www.aosmd.com 1 10 100 1000 VDS (Volts) Figure 12: Maximum Forward Biased Safe Operating Area for AOTF11C60 (Note F) Page 4 of 6 AOT11C60/AOB11C60/AOTF11C60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.45°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse 0.01 Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOT(B)11C60 (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF11C60(Note F) Rev.3.0: Auguest 2014 www.aosmd.com Page 5 of 6 AOT11C60/AOB11C60/AOTF11C60 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.3.0: Auguest 2014 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 6 of 6