Datasheet

AOT1606L/AOB1606L
60V N-Channel Rugged Planar MOSFET
General Description
Product Summary
The AOT1606L/AOB1606L uses a robust technology that
is designed to provide efficient and reliable power
conversion even in the most demanding applications,
including motor control. With low RDS(ON) and excellent
thermal capability this device is appropriate for high
current switching and can endure adverse operating
conditions.
VDS
60V
ID (at VGS=10V)
178A
RDS(ON) (at VGS=10V)
< 6.3mΩ
100% UIS Tested
100% Rg Tested
TO-263
D2PAK
TO220
Top View
Bottom View
Top View
D
D
Bottom View
D
D
D
G
G
D
S
S
D
G
S
Continuous Drain
Current G
VGS
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
±20
V
126
A
12
IDSM
TA=70°C
Units
V
310
IDM
TA=25°C
Maximum
60
178
ID
TC=100°C
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
G
G
A
10
Avalanche Current C
IAS, IAR
125
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
781
mJ
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
TA=25°C
Rev0: May 2011
2.1
Steady-State
Steady-State
RθJA
RθJC
www.aosmd.com
W
1.3
TJ, TSTG
Symbol
t ≤ 10s
W
208
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
417
PD
-55 to 175
Typ
12
48
0.3
°C
Max
15
60
0.36
Units
°C/W
°C/W
°C/W
Page 1of 6
AOT1606L/AOB1606L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS, ID=250µΑ
2.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
310
VGS=10V, ID=20A
TO220
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VGS=10V, ID=20A
TO263
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A, VGS=0V
IS
Maximum Body-Diode Continuous CurrentG
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
µA
5
IGSS
Units
V
1
TJ=55°C
RDS(ON)
Max
60
VDS=60V, VGS=0V
VGS(th)
Coss
Typ
100
nA
3.1
3.7
V
5.5
6.3
9.4
10.8
5.2
53
6
mΩ
S
0.7
1
V
178
A
A
mΩ
2980
3735
4500
pF
605
872
1140
pF
40
69
98
pF
1.6
3.2
4.8
Ω
68
85
102
nC
VGS=10V, VDS=30V, ID=20A
Qgs
Gate Source Charge
19
nC
Qgd
Gate Drain Charge
24
nC
tD(on)
Turn-On DelayTime
18
ns
tr
Turn-On Rise Time
31
ns
tD(off)
Turn-Off DelayTime
60
ns
tf
Turn-Off Fall Time
14
ns
VGS=10V, VDS=30V, RL=1.5Ω,
RGEN=3Ω
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
33
48
63
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
280
411
540
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C. Maximum UIS current limited by test equipment.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package is 120A.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: May 2011
www.aosmd.com
Page 2 of 6
AOT1606L/AOB1606L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
VDS=5V
10V
80
80
5.5V
5V
60
ID(A)
ID (A)
60
40
40
VGS=4.5V
20
20
25°C
0
0
0
1
2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
0
5
8
1
2
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
6
Normalized On-Resistance
2.2
6
RDS(ON) (mΩ
Ω)
125°C
VGS=10V
4
2
2.0
1.8
VGS=10V
ID=20A
17
5
2
10
1.6
1.4
1.2
1.0
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
15
ID=20A
1.0E+01
12
40
9
125°C
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
6
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
25°C
3
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev0: May 2011
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOT1606L/AOB1606L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
9000
VDS=20V
ID=20A
7500
Capacitance (pF)
VGS (Volts)
8
6
4
2
6000
4500
Ciss
3000
Coss
1500
Crss
0
0
0
15
30
45
60
75
Qg (nC)
Figure 7: Gate-Charge Characteristics
90
0
1000.0
10µs
RDS(ON)
limited
30
100µs
DC
10.0
1ms
10ms
1.0
6000
17
5
2
10
4500
3000
TJ(Max)=175°C
TC=25°C
0.1
TJ(Max)=175°C
TC=25°C
7500
10µs
Power (W)
ID (Amps)
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
9000
100.0
1500
0.0
0
0.01
0.1
1 VDS (Volts)
10
100
1000
0.0001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Zθ JC Normalized Transient
Thermal Resistance
5
0.1
10
10
Pulse Width (s) 18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
0.001
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.36°C/W
40
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0: May 2011
www.aosmd.com
Page 4 of 6
AOT1606L/AOB1606L
200
500
160
400
Power Dissipation (W)
IAR (A) Peak Avalanche Current
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
TA=25°C
120
TA=100°C
TA=150°C
80
TA=125°C
300
200
40
100
0
0
1
10
100
1000
10000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
50
75
100
125
TCASE (°°C)
Figure 13: Power De-rating (Note F)
150
175
10000
200
TA=25°C
160
1000
Power (W)
Current rating ID(A)
25
120
80
17
5
2
10
100
10
40
1
0
0
25
50
75
100
125
150
175
TCASE (°°C)
Figure 14: Current De-rating (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
01000
0.1
10
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.00001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
1
0.001
40
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev0: May 2011
www.aosmd.com
Page 5 of 6
AOT1606L/AOB1606L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev0: May 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 6 of 6