HITACHI BB101M

BB101M
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
ADE-208-504
1st. Edition
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)
• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,
Rs = 0 conditions.
Outline
MPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
BB101M
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDS
6
V
Gate 1 to source voltage
VG1S
+6
–0
V
Gate 2 to source voltage
VG2S
±6
V
Drain current
ID
25
mA
Channel power dissipation
Pch
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
2
BB101M
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
6
—
—
V
I D = 200 µA
VG1S = VG2S = 0
Gate 1 to source breakdown
voltage
V(BR)G1SS
+6
—
—
V
I G1 = +10 µA
VG2S = VDS = 0
Gate 2 to source breakdown
voltage
V(BR)G2SS
±6
—
—
V
I G2 = ±10 µA
VG1S = VDS = 0
Gate 1 to source cutoff current I G1SS
—
—
+100
nA
VG1S = +5 V
VG2S = VDS = 0
Gate 2 to source cutoff current I G2SS
—
—
±100
nA
VG2S = ±5 V
VG1S = VDS = 0
Gate 1 to source cutoff voltage VG1S(off)
0.2
—
0.8
V
VDS = 5 V, VG2S = 4 V
I D = 100 µA
Gate 2 to source cutoff voltage VG2S(off)
0.4
—
1.0
V
VDS = 5 V, VG1S = 5 V
I D = 100 µA
Drain current
I D(op)
10
15
20
mA
VDS = 5 V, VG1 = 5 V
VG2S = 4 V, RG = 220 kΩ
Forward transfer admittance
|yfs|
16
22
—
mS
VDS = 5 V, VG1 = 5 V,
VG2S = 4 V,
RG = 220 kΩ, f = 1 kHz
Input capacitance
Ciss
1.2
1.7
2.2
pF
VDS = 5 V, VG1 = 5 V
Output capacitance
Coss
0.7
1.1
1.5
pF
VG2S = 4 V, RG = 220 kΩ
Reverse transfer capacitance
Crss
—
0.012
0.03
pF
f = 1 MHz
Power gain
PG
16
20
—
dB
VDS = 5 V, VG1 = 5 V
VG2S = 4 V
Noise figure
NF
—
2.0
3.0
dB
RG = 220 kΩ, f = 900 MHz
Note: Marking is “AU–”.
3
BB101M
Main Characteristics
Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG)
VG2
VG1
RG
Gate 2
Gate 1
Drain
Source
A
ID
Application Circuit
V DS = 5 V
VAGC = 4 to 0.3 V
BBFET
Input
RG
V GG = 5 V
4
Output
BB101M
150
100
50
0
50
100
150
20
10
5
Ambient Temperature Ta (°C)
Drain Current vs.
Gate2 to Source Voltage
VDS = VG1 = 5 V
Drain Current ID (mA)
20
15
10
5
0
kΩ Ω
0
k
0
1 120
kΩ
150 k Ω
180
kΩ
220
kΩ
270
kΩ
3300 k Ω
39
0 kΩ
= 47
RG
RG
1
2
3
4
Drain to Source Voltage VDS (V)
5
Drain Current vs. Gate1 Voltage
VDS = 5 V
RG = 150 kΩ
16
4
V
3
12
V
2V
8
4
1
2
3
4
5
Gate2 to Source Voltage VG2S (V)
Ω
k
0 kΩ
2
1 50
1 kΩ
0
18 k Ω
0
2
2 kΩ
0
7
2 kΩ
330 k Ω
390
0 kΩ
= 47
20
Drain Current ID (mA)
25
VG2S = 4 V
VG1 = VDS
15
0
200
Typical Output Characteristics
kΩ
25
Drain Current ID (mA)
Channel Power Dissipation Pch (mW)
200
10
0
Maximum Channel Power
Dissipation Curve
0
VG2S = 1 V
1
2
3
4
5
Gate1 Voltage VG1 (V)
5
BB101M
Drain Current vs.Gate1 Voltege
Drain Current vs.Gate1 Voltege
16
20
VDS = 5 V
RG = 390 kΩ
VDS = 5 V
RG = 220 kΩ
16
4V
3V
12
2V
8
4
0
Drain Current ID (mA)
Drain Current ID (mA)
20
VG2S = 1 V
1
2
3
4
Gate1 Voltage VG1 (V)
Forward Transfer Admittance |y fs | (mS)
Forward Transfer Admittance |y fs | (mS)
6
4V
3V
2V
10
5
VG2S = 1 V
0
1
2
3
4
Gate1 Voltage VG1 (V)
4
0
5
25
15
4V
3V
2V
8
VG2S = 1 V
Forward Transfer Admittance
vs. Gate1 Voltage
VDS = 5 V
RG = 150 kΩ
20 f = 1 kHz
12
5
1
2
3
4
Gate1 Voltage VG1 (V)
5
Forward Transfer Admittance
vs. Gate1 Voltage
25
VDS = 5 V
RG = 220 kΩ
20 f = 1 kHz
15
4V
3V
2V
10
5
VG2S = 1 V
0
1
2
3
4
Gate1 Voltage VG1 (V)
5
Forward Transfer Admittance
vs. Gate1 Voltage
Power Gain vs. Gate Resistance
30
25
VDS = 5 V
RG = 390 kΩ
20 f = 1 kHz
15
25
4V
3V
Power Gain PG (dB)
Forward Transfer Admittance |y fs | (mS)
BB101M
2V
10
20
15
10
5
5
VG2S = 1 V
0
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
f = 900 MHz
1
2
3
4
Gate1 Voltage VG1 (V)
0
50
5
100 200
500 1000 2000
5000
Gate Resistance RG (kΩ)
Noise Figure vs. Gate Resistance
Power Gain vs. Drain Current
4
30
Power Gain PG (dB)
Noise Figure NF (dB)
25
3
2
1
0
50
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
f = 900 MHz
100 200
20
15
10
5
500 1000 2000
Gate Resistance RG (kΩ)
5000
0
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
RG = variable
f = 900 MHz
5
10
15
20
25
30
Drain Current ID (mA)
7
BB101M
Drain Current vs. Gate Resistance
Noise Figure vs. Drain Current
30
4
Drain Current ID (mA)
Noise Figure NF (dB)
25
3
2
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
RG = variable
f = 900 MHz
1
0
5
20
15
10
5
10
15
20
25
0
10
30
Gain Reduction vs.
Gate2 to Source Voltage
4
V DS = 5 V
V G1 = 5 V
V G2S = 4 V
R G = 220 k Ω
f = 900 MHz
30
Input Capacitance Ciss (pF)
Gain Reduction GR (dB)
100 300 1000 3000 10000
Input Capacitance vs.
Gate2 to Source Voltage
40
20
10
1
2
3
4
Gate2 to Source Voltage VG2S (V)
8
30
Gate Resistance RG (kΩ)
Drain Current ID (mA)
0
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
5
V DS = 5 V
V G1 = 5 V
R G = 220 k Ω
f = 1 MHz
3
2
1
0
1
2
3
4
Gate2 to Source Voltage VG2S (V)
5
BB101M
Output Capacitance vs.
Gate2 to Source Voltage
Output Capacitance Coss (pF)
4
VDS = 5 V
VG1 = 5 V
RG = 220 k Ω
f = 1 MHz
3
2
1
0
1
2
3
4
5
Gate2 to Source Voltage VG2S (V)
9
BB101M
Package Dimentions
Unit: mm
+ 0.3
2.8 – 0.1
+ 0.1
0.4 – 0.05
0.4 – 0.05
3
0.65 – 0.3
+ 0.1
+ 0.1
1.9
0.95 0.95
+ 0.1
0.16 – 0.06
+ 0.2
2.8 – 0.6
1.5
2
0 ~ 0.1
0.95
0.85
0.65– 0.3
+ 0.1
0.6 – 0.05
+ 0.1
1
4
+ 0.1
0.4 – 0.05
+ 0.2
1.1– 0.1
0.3
1.8
10
Hitachi Code
EIAJ
JEDEC
MPAK–4
SC–61AA
—
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.