Datasheet

AOL1426
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1426 uses advanced trench technology to
provide excellent RDS(ON), low gate charge.This device
is suitable for use as a high side switch in SMPS and
general purpose applications.
VDS (V) = 30V
ID = 46A (VGS = 10V)
RDS(ON) < 10.5mΩ (VGS = 10V)
RDS(ON) < 13.5mΩ (VGS = 4.5V)
-RoHS Compliant
-Halogen and Antimony Free Green Device*
TM
Ultra SO-8
UIS Tested
Rg,Ciss,Coss,Crss Tested
Top View
D
D
Bottom tab
connected to
drain
S
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
B
Current
Units
V
±12
V
46
TC=100°C
Pulsed Drain Current
ID
33
IDM
120
TA=25°C
Continuous Drain
Current H
Maximum
30
A
10
IDSM
TA=70°C
A
8
C
IAR
30
A
Repetitive avalanche energy L=0.3mH C
TC=25°C
EAR
135
mJ
Avalanche Current
Power Dissipation
B
Power Dissipation
A
TC=100°C
TA=25°C
Junction and Storage Temperature Range
Maximum Junction-to-Case
C
2
-55 to 175
Symbol
Alpha & Omega Semiconductor, Ltd.
W
1.2
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
W
21
PDSM
TA=70°C
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient A
43
PD
RθJA
RθJC
Typ
24
53
2.4
°C
Max
30
64
3.5
Units
°C/W
°C/W
°C/W
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AOL1426
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
120
TJ=55°C
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
5
VGS=0V, VDS=0V, f=1MHz
uA
0.1
µA
1.55
2.5
V
8.5
10.5
14.5
18
10.2
13.5
mΩ
1.0
V
46
A
1452
pF
A
40
0.73
1210
VGS=0V, VDS=15V, f=1MHz
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
mΩ
S
330
pF
85
pF
1.2
1.6
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
22
28
nC
Qg(4.5V) Total Gate Charge
10
13
nC
VGS=10V, VDS=15V, ID=20A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=20A, dI/dt=100A/µs
36
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
47
Body Diode Reverse Recovery Time
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
3.7
nC
2.7
nC
10
ns
6.3
ns
21
ns
2.8
ns
45
ns
nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T J(MAX)=175°C.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.
* This device is guaranteed green after date code 8P11 (June 1 ST 2008)
Rev5: Dec 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOL1426
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
30
6V
90
20
60
ID(A)
4.5V
ID (A)
VDS=5V
25
10V
VGS=3.5V
125°
15
25°C
10
30
5
0
0
0
1
2
3
4
5
1
1.5
VDS (Volts)
Fig 1: On-Region Characteristics
2.5
3
3.5
4
VGS(Volts)
Figure 2: Transfer Characteristics
13
Normalized On-Resistance
2
11
RDS(ON) (mΩ )
2
VGS=4.5V
9
VGS=10V
7
5
VGS=10V
1.8
ID=20A
1.6
VGS=4.5
1.4
1.2
1
0.8
0.6
0
5
10
15
20
25
30
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
30
60
90
120
150
180
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
20
1.0E+02
1.0E+01
125°C
1.0E+00
15
25°C
IS (A)
RDS(ON) (mΩ )
ID=20A
125°C
10
1.0E-01
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
5
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOL1426
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2000
10
Capacitance (pF)
VGS (Volts)
8
VDS=15V
ID=20A
6
4
2
1500
Ciss
1000
500
Coss
Crss
0
0
0
5
10
15
20
25
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000.0
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
140
10µs
100µ
RDS(ON)
limited
10.0
1m
1.0
DC
10ms
0.1
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
120
Power (W)
100.0
ID (Amps)
5
TJ(Max)=175°C
TC=25°C
100
80
60
40
1
VDS (Volts)
10
100
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
20
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJc.RθJc
RθJC=3.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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AOL1426
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
TA=25°C
Power Dissipation (W)
ID(A), Peak Avalanche Current
60
40
20
40
30
20
10
0
0
0.00001
0.0001
0.001
0
0.01
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
60
140
100
40
Power (W)
Current rating ID(A)
120
20
80
60
40
20
0
0
25
50
75
100
125
150
0
0.001
175
TCASE (°C)
Figure 14: Current De-rating (Note B)
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=64°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
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AOL1426
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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