AON6536

AON6536
30V N-Channel MOSFET
General Description
Product Summary
The AON6536 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
30V
55A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 7mΩ
RDS(ON) (at VGS=4.5V)
< 10mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
PIN1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
Avalanche Current
C
Avalanche Energy L=0.05mH C
TC=25°C
Power Dissipation B
TA=25°C
Power Dissipation
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: February 2014
22
t ≤ 10s
Steady-State
Steady-State
A
IAS
35
A
EAS
31
mJ
35.5
W
14
5.5
PDSM
TA=70°C
A
17.5
PD
TC=100°C
V
135
IDSM
TA=70°C
±20
35
IDM
TA=25°C
Continuous Drain
Current
Units
V
55
ID
TC=100°C
Maximum
30
W
3.6
TJ, TSTG
-55 to 150
°C
Symbol
Typ
Max
Units
RθJA
18
40
2.8
22
55
3.5
°C/W
°C/W
°C/W
RθJC
www.aosmd.com
Page 1 of 6
AON6536
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
1.5
VGS=10V, VDS=5V
135
TJ=55°C
±100
nA
2.0
2.5
V
5.6
7
8.6
11
10
A
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
7.8
gFS
Forward Transconductance
VDS=5V, ID=20A
58
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
0.72
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
µA
5
VGS=10V, ID=20A
Output Capacitance
Units
V
1
Zero Gate Voltage Drain Current
Coss
Max
30
VDS=30V, VGS=0V
IDSS
ID(ON)
Typ
0.6
mΩ
mΩ
S
1
V
40
A
1210
pF
210
pF
100
pF
1.2
1.8
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
19.5
30
nC
Qg(4.5V) Total Gate Charge
9
15
nC
VGS=10V, VDS=15V, ID=20A
Qgs
Gate Source Charge
4.5
nC
Qgd
Gate Drain Charge
3.5
nC
Qgs
Gate Source Charge
4.5
nC
Qgd
Gate Drain Charge
3.5
nC
6
ns
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Qrr
VGS=4.5V, VDS=15V, ID=20A
3
ns
21.5
ns
Turn-Off Fall Time
3
ns
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
9
13
ns
nC
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: February 2014
www.aosmd.com
Page 2 of 6
AON6536
CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
4.5V
50
6V
10V
40
ID(A)
40
ID (A)
VDS=5V
3.5V
50
30
125°C
3V
20
30
20
10
10
VGS=2.5V
0
25°C
0
0
1
2
3
4
5
0.5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
2.5
3.5
4.5
5.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
12
Normalized On-Resistance
1.8
10
VGS=4.5V
RDS(ON) (mΩ
Ω)
1.5
8
6
VGS=10V
4
VGS=10V
ID=20A
1.6
1.4
17
5
2
VGS=4.5V
10
1.2
ID=20A
1
2
0
5
10
15
20
25
0.8
30
0
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
15
1.0E+02
ID=20A
1.0E+01
12
40
1.0E+00
9
125°C
1.0E-01
IS (A)
RDS(ON) (mΩ
Ω)
125°C
6
25°C
1.0E-02
1.0E-03
25°C
3
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: February 2014
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON6536
CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1800
VDS=15V
ID=20A
1500
8
Capacitance (pF)
VGS (Volts)
Ciss
6
4
2
900
600
Coss
300
0
Crss
0
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
200
1000.0
100.0
10.0
100us
1ms
10ms
DC
1.0
0.1
TJ(Max)=150°C
TC=25°C
160
10µs
RDS(ON)
limited
Power (W)
ID (Amps)
1200
120
80
40
TJ(Max)=150°C
TC=25°C
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=3.5°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: February 2014
www.aosmd.com
Page 4 of 6
AON6536
CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
35
TA=25°C
100
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
TA=150°C
10
TA=125°C
30
25
20
15
10
5
0
1
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
25
50
75
100
125
TCASE (°
°C)
Figure 13: Power De-rating (Note F)
150
10000
60
TA=25°C
1000
40
Power (W)
Current rating ID(A)
50
30
100
20
10
10
1
0
0
25
50
75
100
125
0.00001
150
0.001
0.1
10
1000
TCASE (°
°C)
Figure 14: Current De-rating (Note F)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
Thermal Resistance
10
1
RθJA=55°C/W
40
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: February 2014
www.aosmd.com
Page 5 of 6
AON6536
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev.1.0: February 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 6 of 6