Datasheet

UNISONIC TECHNOLOGIES CO., LTD
10N60K-MT
10A, 600V N-CHANNEL
POWER MOSFET

1
FEATURES
1
1
1
SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
10N60KL-TA3-T
10N60KG-TA3-T
TO-220
10N60KL-TF3-T
10N60KG-TF3-T
TO-220F
10N60KL-TF1-T
10N60KG-TF1-T
TO-220F1
10N60KL-TF2-T
10N60KG-TF2-T
TO-220F2
10N60KL-TF3T-T
10N60KG-TF3T-T
TO-220F3
10N60KL-T2Q-T
10N60KG-T2Q-T
TO-262
10N60KL-TQ2-T
10N60KG-TQ2-T
TO-263
10N60KL-TQ2-R
10N60KG-TQ2-R
TO-263
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
TO-220F2
TO-220F1
1
1
TO-220F3
* RDS(ON) < 0.75Ω @ VGS =10V, ID = 5.0A
* Low gate charge ( typical 33 nC)
* Low Crss ( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

TO-220F
TO-220
DESCRIPTION
The UTC 10N60K-MT is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.

Power MOSFET
TO-262
1
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
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QW-R205-022.J
10N60K-MT

Power MOSFET
MARKING
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10N60K-MT

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
± 30
V
Avalanche Current (Note 2)
IAR
10
A
Continuous
ID
10
A
Drain Current
38
A
Pulsed (Note 2)
IDM
Single Pulsed (Note 3)
EAS
200
mJ
Avalanche Energy
12
mJ
Repetitive (Note 2)
EAR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262
156
W
TO-263
PD
Power Dissipation
TO-220F/TO-220F1
52
W
TO-220F2/TO-220F3
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 4mH, IAS = 10A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C
4. ISD ≤ 9.5A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
TO-220/TO-262
TO-263
Junction to Case
TO-220F/TO-220F1
TO-220F2/TO-220F3
SYMBOL
θJA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RATING
62.5
UNIT
°C/W
0.8
°C/W
2.4
°C/W
θJC
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
VGS=0V, ID= 250μA
VDS=600V, VGS=0V
Forward
VGS=30V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-30V, VDS=0V
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250 µA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=5.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0 MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
VDS=50V, ID=1.3A, VGS=10V
Gate-Source Charge
QGS
IG=100μA (Note1, 2)
Gate-Drain Charge
QGD
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD=30V, ID=0.5A, RG=25Ω,
VGS=0V (Note1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS=10A
Reverse Recovery Time
trr
VGS=0V, IS=10A,
dIF/dt=100A/µs (Note1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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MIN TYP MAX UNIT
600
0.7
2.0
V
1
µA
100 nA
-100 nA
V/°C
4.0
0.63 0.75
V
Ω
1570
166
18
pF
pF
pF
33
9
8.5
67
84
205
95
nC
nC
nC
ns
ns
ns
ns
420
4.2
10
A
38
A
1.4
V
ns
µC
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TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
10V
VDD
D.U.T.
ID(t)
VDS(t)
VDD
tp
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Gate Threshold Voltage
300
300
250
250
Drain Current, ID (µA)
Drain Current, ID (µA)
Drain Current vs. Drain-Source
Breakdown Voltage
200
150
100
50
0
200
150
100
50
0
150
300
450
600
0
0
750
8
Continuous Drain-Source Diode Forward
Current, IS (A)
Drain-Source On-State Resistance
Characteristics
Drain Current, ID (A)
VGS=10V, ID=5A
6
4
2
0
0
1
2
3
4
5
Drain to Source Voltage, VDS (V)
0.5
1.0
1.5
2.0
3.0
2.5
Gate Threshold Voltage, VTH (V)
Drain-Source Breakdown Voltage, BVDSS (V)
Continuous Drain-Source Diode Forward
Current vs. Source to Drain Voltage
12.5
10
7.5
5
2.5
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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