UNISONIC TECHNOLOGIES CO., LTD 7N60K-MTQ Preliminary Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60K-MTQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES * RDS(ON) < 1.4Ω @ VGS = 10V, ID = 3.5A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 7N60KL-TA3-T 7N60KG-TA3-T TO-220 7N60KL-TF3-T 7N60KG-TF3-T TO-220F 7N60KL-TF1-T 7N60KG-TF1-T TO-220F1 7N60KL-TF2-T 7N60KG-TF2-T TO-220F2 7N60KL-TN3-R 7N60KG-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-025.f 7N60K-MTQ Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 7 A Continuous Drain Current ID 7 A Pulsed Drain Current (Note 2) IDM 24.8 A Single Pulsed (Note 3) EAS 340 mJ Avalanche Energy 13 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 2.8 ns TO-220 142 W TO-220F/TO-220F1 Power Dissipation PD 48 W TO-220F2 TO-252 59 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 18.33mH, IAS = 7A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 7A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 Junction to Ambient TO-252 TO-220 TO-220F/TO-220F1 Junction to Case TO-220F2 TO-252 SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATING UNIT 62.5 °C/W 110 0.88 °C/W °C/W 2.6 °C/W 2.1 °C/W 2 of 6 QW-R205-025.f 7N60K-MTQ Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS TEST CONDITIONS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT VGS=0V, ID=250μA 600 VDS=600V, VGS=0V VDS=480V, VGS=0V, TJ =125°C VG=30V, VDS=0V VGS=-30V, VDS=0V Forward IGSS Reverse Breakdown Voltage Temperature △BVDSS/△TJ ID=250μA, Referenced to 25°C Coefficient ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3.5A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0 MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD=30V, ID =0.5A, RG =25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=50V, ID=1.3A, VGS=10V Gate-Source Charge QGS IG=100μA (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS=0V, IS=7A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Body Diode Reverse Recovery Time tRR ISD=7A, dIS/dt=100A/µs Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. Gate- Source Leakage Current MIN 10 10 100 -100 0.53 2.0 V μA μA nA nA V/°C 4.0 1.4 V Ω 540 97 11 pF pF pF 60 66 120 64 23 6.7 5.7 ns ns ns ns nC nC nC 368 3.5 28 1.4 V 7 A 28 A ns nC 3 of 6 QW-R205-025.f 7N60K-MTQ Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R205-025.f 7N60K-MTQ Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R205-025.f 7N60K-MTQ Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R205-025.f