UNISONIC TECHNOLOGIES CO., LTD UTT8P03-H Power MOSFET -8A, -30V, P-CHANNEL MOSFET DESCRIPTION The UTC UTT8P03-H is a P-channel MOSFET. it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge. The UTC UTT8P03-H is suitable for load switching. FEATURES * RDS(ON) ≤ 26mΩ @ VGS=-10V, ID=-8A RDS(ON) ≤ 34mΩ @ VGS=-4.5V, ID=-7A * High switching speed * Low gate charge SYMBOL ORDERING INFORMATION Ordering Number Note: UTT8P03G-K08-3020-R Pin Assignment: D: Drain Package G: Gate DFN-8(3×2) S: Source 1 D 2 D Pin Assignment 3 4 5 6 D G S D 7 D 8 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 8 QW-R210-006.a UTT8P03-H Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER RATINGS UNIT -30 V ±20 V TC=25°C -8 A Continuous ID Drain Current TC=70°C -6 A Pulsed (Note 3) IDM -60 A Power Dissipation (Note2) PD 3 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The power dissipation PD is based on TJ(MAX)=150°C, using ≤10s junction-to-ambient thermal resistance. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ=25°C Drain-Source Voltage Gate-Source Voltage SYMBOL VDSS VGSS THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 90 40 UNIT °C/W °C/W 2 of 8 QW-R210-006.A UTT8P03-H Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Static Drain-Source On-State Resistance RDS(ON) TEST CONDITIONS MIN ID=-250µA, VGS=0V VDS=-30V, VGS=0V VDS=-30V, VGS=0V, TJ=55°C VGS=+20V, VDS=0V VGS=-20V, VDS=0V -30 VDS=VGS, ID=-250µA VGS=-10V, ID=-8A VGS=-4.5V, ID=-7A VGS=-10V, VDS=-5V -0.8 TYP MAX UNIT -1 -5 +10 -10 -1.3 21 27 -1.8 26 34 V µA µA uA uA V mΩ mΩ A On State Drain Current ID(ON) -60 DYNAMIC PARAMETERS Input Capacitance CISS 930 pF VGS=0V, VDS=-15V, f=1.0MHz Output Capacitance COSS 170 pF Reverse Transfer Capacitance CRSS 120 pF Gate Resistance RG VGS=0V, VDS=0V, f=1MHz 8 Ω SWITCHING PARAMETERS (Note 2) Total Gate Charge QG 11 17 nC VGS=-4.5V, VDS=-15V, ID=-5A Gate to Source Charge QGS 3.4 nC Gate to Drain Charge QGD 4.2 nC Turn-ON Delay Time tD(ON) 5.8 11 ns Rise Time tR 18.8 36 ns VDS=-1 5V, VGS=-10V, RGEN=6Ω, ID=-1A Turn-OFF Delay Time tD(OFF) 46.9 90 ns Fall-Time tF 12.3 23 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS -8.5 A Maximum Body-Diode Pulsed Current ISm -17 A Drain-Source Diode Forward Voltage VSD IS=-1A, VGS=0V -0.74 -1 V Notes: 1. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. 2. The power dissipation PD is based on TJ(MAX)=150°C, using ≤10s junction-to-ambient thermal resistance. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ=25°C 4. The θJA is the sum of the thermal impedance from junction to lead θJL and lead to ambient 5. The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max 6. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R210-006.A UTT8P03-H Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS RG 90% RD VGS VDS 10V 10% DUT VGS td(ON) tON Resistive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tR td(OFF) tF tOFF Resistive Switching Waveforms 4 of 8 QW-R210-006.A UTT8P03-H Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R210-006.A UTT8P03-H On-Resistance, RDS(ON) (mΩ) Normalized On-Resistance, RDS(ON) Drain Current, -ID (A) Drain-Source Current, -ID (A) TYPICAL CHARACTERISTICS Figure 5. On-Resistance vs. Gate-Source Voltage (Note 5) 70 ID=-8A 60 50 40 125°C 30 25°C 20 10 Figure 6. Body-Diode Characteristics (Note 5) 1.0E+0.2 Reverse Drain Current, -IS (A) On-Resistance, RDS(ON) (mΩ) Power MOSFET 1.0E+0.1 1.0E+0.0 125°C 1.0E-0.1 1.0E-0.2 25°C 1.0E-0.3 1.0E-0.4 1.0E-0.5 0 4 6 8 Gate-Source Voltage, -VGS (V) 10 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 25 50 75 100 125 150 175 Body Diode Forward Voltage -VSD (V) 6 of 8 QW-R210-006.A www.unisonic.com.tw Normalized Transient Thermal Resistance, ZθJA Drain Current, ID (A) Capacitance (pF) s UNISONIC TECHNOLOGIES CO., LTD 0m 10 Power (W) s m 10 Normalized Transient Thermal Resistance, ZθJA UTT8P03-H Power MOSFET TYPICAL CHARACTERISTICS (Cont.) QW-R210-006.A 7 of 8 UTT8P03-H Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R210-006.A