AON7826 20V Dual N-Channel MOSFET General Description The AON7826 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two low RDS (ON)MOSFETs in a dual DFN3x3 package. The AON7826 is well suited for use in compact DC/DC converter applications. Features VDS 20V ID (at VGS=10V) 22A RDS(ON) (at VGS=10V) < 23mΩ RDS(ON) (at VGS =4.5V) < 26mΩ RDS(ON) (at VGS =2.5V) < 34mΩ RDS(ON) (at VGS =1.8V) < 52mΩ D1 D2 Top View D1 G1 D1 S2 D2 G2 D2 S1 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Continuous Drain Current C V A 9 A 7 Avalanche Current C IAS, IAR 8 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 3 mJ Power Dissipation B Junction and Storage Temperature Range 3.1 Steady-State Steady-State RθJA RθJC W 2 TJ, TSTG Symbol t ≤ 10s W 6.7 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 16.7 PD TC=100°C TA=25°C Power Dissipation A 1/6 ±12 50 IDSM TA=70°C Units V 14 IDM TA=25°C Maximum 20 22 ID TC=100°C S2 -55 to 150 Typ 30 60 6.2 °C Max 40 75 7.5 Units °C/W °C/W °C/W www.freescale.net.cn AON7826 20V Dual N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=10V, VDS=5V 50 TJ=55°C 5 100 ±nA 1.1 V 19 23 25.5 32 VGS=4.5V, ID=7A 21 26 mΩ VGS=2.5V, ID=6A 26 34 mΩ VGS=1.8V, ID=2A 34 52 mΩ TJ=125°C A gFS Forward Transconductance VDS=5V, ID=9A 20 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 0.75 VGS=10V, ID=9A Coss Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 VDS=20V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz mΩ S 1 V 15 A 420 525 630 pF 65 95 125 pF 45 75 105 pF 2.6 Ω 0.8 1.7 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 10 12.5 15 nC Qg(4.5V) Total Gate Charge 4.5 6 7.5 nC VGS=10V, VDS=10V, ID=9A Qgs Gate Source Charge 1 nC Qgd Gate Drain Charge 2 nC tD(on) Turn-On DelayTime 3 ns tr Turn-On Rise Time 7.5 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=10V, RL=1.1Ω, RGEN=3Ω 20 ns 6 ns IF=9A, dI/dt=500A/µs 14 Body Diode Reverse Recovery Charge IF=9A, dI/dt=500A/µs 6 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AON7826 20V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 20 10V VDS=5V 4.5V 15 2.5V ID(A) ID (A) 30 20 10 1.8V 125°C 5 10 25°C VGS=1.5V 0 0 0 1 2 3 4 0 5 0.5 60 Normalized On-Resistance RDS(ON) (mΩ ) 40 VGS=1.8V VGS=2.5V 30 VGS=4.5V 20 VGS=10V 2 2.5 VGS=2.5V ID=6A 1.6 VGS=1.8V ID=2A 1.4 17 5 VGS=4.5V 2 ID=7A 10 1.2 1 VGS=10V ID=9A 0.8 10 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 80 1.0E+02 ID=9A 70 1.0E+01 60 1.0E+00 40 125°C 50 IS (A) RDS(ON) (mΩ ) 1.5 1.8 50 1.0E-02 30 1.0E-03 25°C 125°C 1.0E-01 40 25°C 1.0E-04 20 1.0E-05 10 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON7826 20V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1000 VDS=10V ID=9A 800 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 600 400 Coss 2 200 0 0 0 3 6 9 12 Qg (nC) Figure 7: Gate-Charge Characteristics 15 0 100µs Power (W) ID (Amps) 20 TJ(Max)=150°C TC=25°C 160 10µs 1ms 10ms DC TJ(Max)=150°C TC=25°C 0.1 120 17 5 2 10 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18Junction-toFigure 10: Single Pulse Power Rating Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 10µs RDS(ON) limited 1.0 10 5 200 100.0 10.0 Crss D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=7.5°C/W 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AON7826 20V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 TΑ=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 100 TΑ=100°C TΑ=150°C 10 TΑ=125°C 1 15 10 5 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 10000 20 1000 25 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 150 TA=25°C Power (W) Current rating ID(A) 20 15 10 17 5 2 10 100 10 5 1 0.00001 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) 0.001 0.1 10 1000 0 18 150 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 40 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AON7826 20V Dual N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn