SHENZHENFREESCALE AON7826

AON7826
20V Dual N-Channel MOSFET
General Description
The AON7826 is designed to provide a high efficiency synchronous buck power stage with optimal layout and
board space utilization. It includes two low RDS (ON)MOSFETs in a dual DFN3x3 package. The AON7826 is
well suited for use in compact DC/DC converter applications.
Features
VDS
20V
ID (at VGS=10V)
22A
RDS(ON) (at VGS=10V)
< 23mΩ
RDS(ON) (at VGS =4.5V)
< 26mΩ
RDS(ON) (at VGS =2.5V)
< 34mΩ
RDS(ON) (at VGS =1.8V)
< 52mΩ
D1
D2
Top View
D1
G1
D1
S2
D2
G2
D2
S1
G1
G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
C
V
A
9
A
7
Avalanche Current C
IAS, IAR
8
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
3
mJ
Power Dissipation B
Junction and Storage Temperature Range
3.1
Steady-State
Steady-State
RθJA
RθJC
W
2
TJ, TSTG
Symbol
t ≤ 10s
W
6.7
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
16.7
PD
TC=100°C
TA=25°C
Power Dissipation A
1/6
±12
50
IDSM
TA=70°C
Units
V
14
IDM
TA=25°C
Maximum
20
22
ID
TC=100°C
S2
-55 to 150
Typ
30
60
6.2
°C
Max
40
75
7.5
Units
°C/W
°C/W
°C/W
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AON7826
20V Dual N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.4
ID(ON)
On state drain current
VGS=10V, VDS=5V
50
TJ=55°C
5
100
±nA
1.1
V
19
23
25.5
32
VGS=4.5V, ID=7A
21
26
mΩ
VGS=2.5V, ID=6A
26
34
mΩ
VGS=1.8V, ID=2A
34
52
mΩ
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=9A
20
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
0.75
VGS=10V, ID=9A
Coss
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
20
VDS=20V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
mΩ
S
1
V
15
A
420
525
630
pF
65
95
125
pF
45
75
105
pF
2.6
Ω
0.8
1.7
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
10
12.5
15
nC
Qg(4.5V) Total Gate Charge
4.5
6
7.5
nC
VGS=10V, VDS=10V, ID=9A
Qgs
Gate Source Charge
1
nC
Qgd
Gate Drain Charge
2
nC
tD(on)
Turn-On DelayTime
3
ns
tr
Turn-On Rise Time
7.5
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=10V, VDS=10V, RL=1.1Ω,
RGEN=3Ω
20
ns
6
ns
IF=9A, dI/dt=500A/µs
14
Body Diode Reverse Recovery Charge IF=9A, dI/dt=500A/µs
6
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2/6
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AON7826
20V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
20
10V
VDS=5V
4.5V
15
2.5V
ID(A)
ID (A)
30
20
10
1.8V
125°C
5
10
25°C
VGS=1.5V
0
0
0
1
2
3
4
0
5
0.5
60
Normalized On-Resistance
RDS(ON) (mΩ )
40
VGS=1.8V
VGS=2.5V
30
VGS=4.5V
20
VGS=10V
2
2.5
VGS=2.5V
ID=6A
1.6
VGS=1.8V
ID=2A
1.4
17
5
VGS=4.5V
2
ID=7A
10
1.2
1
VGS=10V
ID=9A
0.8
10
0
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
80
1.0E+02
ID=9A
70
1.0E+01
60
1.0E+00
40
125°C
50
IS (A)
RDS(ON) (mΩ )
1.5
1.8
50
1.0E-02
30
1.0E-03
25°C
125°C
1.0E-01
40
25°C
1.0E-04
20
1.0E-05
10
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/6
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON7826
20V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1000
VDS=10V
ID=9A
800
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
600
400
Coss
2
200
0
0
0
3
6
9
12
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
0
100µs
Power (W)
ID (Amps)
20
TJ(Max)=150°C
TC=25°C
160
10µs
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
0.1
120
17
5
2
10
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18Junction-toFigure 10: Single Pulse Power Rating
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
10µs
RDS(ON)
limited
1.0
10
5
200
100.0
10.0
Crss
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=7.5°C/W
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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AON7826
20V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
TΑ=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
100
TΑ=100°C
TΑ=150°C
10
TΑ=125°C
1
15
10
5
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
25
10000
20
1000
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
TA=25°C
Power (W)
Current rating ID(A)
20
15
10
17
5
2
10
100
10
5
1
0.00001
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.001
0.1
10
1000
0
18
150
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
40
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5/6
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AON7826
20V Dual N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
6/6
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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