Rev 2: Sep 2004 AOD422, AOD422L (Green Product) N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AOD422L (Green Product) is offered in a Lead Free package. VDS (V) = 20V ID = 10 A RDS(ON) < 22mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.5V) RDS(ON) < 34mΩ (VGS = 1.8V) ESD Rating: 2000V HBM TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current G Maximum 20 Units V ±8 V 10 TC=100°C A ID IDM 10 Pulsed Drain Current C Avalanche Current C IAR 15 A EAR 26 mJ Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. 2.5 W 1.6 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 20 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C 50 PD TA=25°C Power Dissipation A 30 RθJA RθJL Typ 16.7 40 1.9 °C Max 25 50 2.5 Units °C/W °C/W °C/W AOD422, AOD422L Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage On state drain current ID(ON) RDS(ON) gFS VSD IS Static Drain-Source On-Resistance Min ID=250µA, VGS=0V VDS=16V, VGS=0V 20 SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Typ 1 5 0.6 1 V 18 25 22 31 mΩ 21 26 mΩ 26 30 0.76 34 mΩ 1 10 S V A 30 TJ=125°C VGS=2.5V, ID=8A VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=10A VGS=5V, VDS=10V, RL=1Ω, RGEN=3Ω IF=10A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs µA µA VDS=0V, VGS=±8V 0.4 Units ±1 ±10 VDS=0V, VGS=±4.5V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=4.5V, ID=10A Max V TJ=55°C VGS=1.8V, ID=5A Forward Transconductance VDS=5V, ID=10A Diode Forward Voltage IS=1A,VGS=0V G Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance tD(off) tf trr Qrr Conditions µA A 1160 187 146 1.5 pF pF pF Ω 16 0.8 3.8 6.2 nC nC nC ns 12.7 51.7 16 ns ns ns 17.6 ns nC 6.5 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOD422, AOD422L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 8V VGS=5V VGS =2V 15 20 ID(A) ID(A) VGS =1.5V 10 10 125°C 5 VGS =1V 25°C 0 0 0 1 2 3 4 5 0.0 VDS(Volts) 1.0 1.5 2.0 2.5 VGS(Volts) Figure 2: Transfer Characteristics Figure 1: On-Regions Characteristi cs 40 Normalize ON-Resistance 1.6 VGS =1.8V RDS(ON)(mΩ) 0.5 30 VGS =2.5V 20 VGS =4.5V 10 0 5 10 15 VGS=2.5V ID=8A 1.4 VGS=1.8V ID=5A 1.2 VGS=4.5V ID=10A 1.0 0.8 20 0 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1E+01 ID=10A 1E+00 125°C 1E-01 40 IS(A) RDS(ON)(mΩ) 50 125°C 30 1E-02 1E-03 20 25°C 1E-04 25°C 1E-05 10 0 2 4 6 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 8 0.0 0.2 0.4 0.6 0.8 VSD(Volts) Figure 6: Body-Diode Characteristics 1.0 AOD422, AOD422L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000 5 VDS=10V ID=10A 1600 Capacitance (pF) VGS(Volts) 4 3 2 Ciss 1200 800 1 400 0 0 0 5 10 15 Crss 0 20 10 15 20 60 RDS(ON) limited TJ(Max)=150°C TA=25°C 50 10µs 100µs 40 1ms 0.1s Power (W) ID (Amps) TJ(Max)=150°C TA=25°C 10.0 5 VDS(Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 Coss 10ms 1.0 1s 30 20 10s DC 10 0.1 0.1 1 10 100 0 0.001 VDS (Volts) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. T 100 1000