AON6280 80V N-Channel MOSFET General Description The AON6280 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) , Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial powersupplies and LED backlighting. Features VDS 80V ID (at VGS=10V) 85A RDS(ON) (at VGS=10V) < 4.1mΩ RDS(ON) (at VGS=6V) < 5.0mΩ D Top View 1 8 2 7 3 6 4 5 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C C Avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 1/6 IAS 50 A EAS 125 mJ 83 Steady-State Steady-State W 33 7.3 RθJA RθJC W 4.7 TJ, TSTG Symbol t ≤ 10s A 13 PDSM Junction and Storage Temperature Range A 17 PD TA=25°C V 230 IDSM TA=70°C ±20 65 IDM TA=25°C Continuous Drain Current Units V 85 ID TC=100°C Maximum 80 -55 to 150 Typ 14 40 1 °C Max 17 55 1.5 Units °C/W °C/W °C/W www.freescale.net.cn AON6280 80V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2 ID(ON) On state drain current VGS=10V, VDS=5V 230 TJ=55°C 5 ±100 nA 3.2 V 3.4 4.1 5.8 7 VGS=6V, ID=20A 4 5 mΩ 1 V 85 A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 76 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=40V, f=1MHz Gate Source Charge Qgd tD(on) VGS=10V, VDS=40V, ID=20A 0.3 mΩ S 3930 pF 592 pF 66 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs µA 2.6 VGS=10V, ID=20A Output Capacitance Units V 1 Zero Gate Voltage Drain Current Coss Max 80 VDS=80V, VGS=0V IDSS RDS(ON) Typ pF 0.7 1.1 58 82 Ω nC 15 nC Gate Drain Charge 14 nC Turn-On DelayTime 13 ns 6 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=40V, RL=2Ω, RGEN=3Ω 32 ns 9 ns IF=20A, dI/dt=500A/µs 36 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 153 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AON6280 80V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 5V 6V 80 VDS=5V 4.5V 10V 80 60 ID(A) ID (A) 60 40 40 4V 125°C 20 20 25°C VGS=3.5V 0 0 0 1 2 3 4 0 5 10 2 3 4 5 6 Normalized On-Resistance 2 8 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 6 VGS=6V 4 VGS=10V 2 0 1.8 VGS=10V ID=20A 1.6 17 5 2 VGS=6V ID=20A 10 1.4 1.2 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 12 1.0E+02 ID=20A 1.0E+01 10 40 1.0E+00 6 1.0E-01 1.0E-02 25°C 4 1.0E-03 25°C 2 1.0E-04 1.0E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 125°C 125°C IS (A) RDS(ON) (mΩ Ω) 8 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON6280 80V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 5000 VDS=40V ID=20A Ciss 4000 Capacitance (pF) VGS (Volts) 8 6 4 2 3000 2000 Coss 1000 0 Crss 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 60 0 20 30 40 50 60 70 VDS (Volts) Figure 8: Capacitance Characteristics 80 500 1000.0 100.0 10 400 10µs RDS(ON) TJ(Max)=150°C TC=25°C 10.0 100µs 1.0 1ms 10ms DC Power (W) ID (Amps) 10µs TJ(Max)=150°C TC=25°C 0.1 17 5 2 10 300 200 100 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 40 RθJC=1.5°C/W PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AON6280 80V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C 100 TA=150°C 60 40 20 TA=125°C 10 0 1 10 100 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 1000 0 50 75 100 125 TCASE (° °C) Figure 13: Power De-rating (Note F) 150 TA=25°C 80 Power (W) 1000 60 40 17 5 2 10 100 10 20 0 1 0 10 Zθ JA Normalized Transient Thermal Resistance 25 10000 100 Current rating ID(A) 80 1 25 50 75 100 125 TCASE (° °C) Figure 14: Current De-rating (Note F) 150 0.00001 0.001 0.1 10 0 1000 18 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=55°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AON6280 80V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn