AON6280 80V N-Channel MOSFET General Description Product Summary VDS The AON6280 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 80V 85A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 4.1mΩ RDS(ON) (at VGS=6V) < 5.0mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C C Avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 1 : Mar. 2012 IAS 50 A EAS 125 mJ 83 Steady-State Steady-State W 33 7.3 RθJA RθJC W 4.7 TJ, TSTG Symbol t ≤ 10s A 13 PDSM Junction and Storage Temperature Range A 17 PD TA=25°C V 230 IDSM TA=70°C ±20 65 IDM TA=25°C Continuous Drain Current Units V 85 ID TC=100°C Maximum 80 -55 to 150 Typ 14 40 1 www.aosmd.com °C Max 17 55 1.5 Units °C/W °C/W °C/W Page 1 of 6 AON6280 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS=±20V VDS=VGS ID=250µA 2 ID(ON) On state drain current VGS=10V, VDS=5V 230 ±100 nA 2.6 3.2 V 3.4 4.1 5.8 7 VGS=6V, ID=20A 4 5 VGS=10V, ID=20A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 76 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=40V, f=1MHz Gate Source Charge VGS=10V, VDS=40V, ID=20A 0.3 mΩ mΩ S 1 V 85 A 3930 pF 592 pF 66 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs µA 5 Gate Threshold Voltage Units V 1 VGS(th) Coss Max 80 VDS=80V, VGS=0V IGSS RDS(ON) Typ pF 0.7 1.1 58 82 Ω nC 15 nC Qgd Gate Drain Charge 14 nC tD(on) Turn-On DelayTime 13 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 6 ns 32 ns tf Turn-Off Fall Time 9 ns trr Body Diode Reverse Recovery Time Qrr IF=20A, dI/dt=500A/µs 36 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 153 ns nC VGS=10V, VDS=40V, RL=2Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1 : Mar. 2012 www.aosmd.com Page 2 of 6 AON6280 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 5V 6V 80 VDS=5V 4.5V 10V 80 60 ID(A) ID (A) 60 40 40 4V 125°C 20 20 25°C VGS=3.5V 0 0 0 1 2 3 4 0 5 10 2 3 4 5 6 Normalized On-Resistance 2 8 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 6 VGS=6V 4 VGS=10V 2 0 1.8 VGS=10V ID=20A 1.6 17 5 2 VGS=6V ID=20A 10 1.4 1.2 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 12 1.0E+02 ID=20A 1.0E+01 10 40 1.0E+00 125°C 125°C IS (A) RDS(ON) (mΩ Ω) 8 6 1.0E-01 1.0E-02 25°C 4 1.0E-03 25°C 2 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Rev 1 : Mar. 2012 www.aosmd.com Page 3 of 6 AON6280 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 5000 VDS=40V ID=20A Ciss 4000 Capacitance (pF) VGS (Volts) 8 6 4 2 3000 2000 Coss 1000 0 Crss 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 60 0 20 30 40 50 60 70 VDS (Volts) Figure 8: Capacitance Characteristics 80 500 1000.0 100.0 10 400 10µs RDS(ON) TJ(Max)=150°C TC=25°C 10.0 100µs 1.0 1ms 10ms DC Power (W) ID (Amps) 10µs TJ(Max)=150°C TC=25°C 0.1 17 5 2 10 300 200 100 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.0001 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 40 RθJC=1.5°C/W PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1 : Mar. 2012 www.aosmd.com Page 4 of 6 AON6280 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C 100 TA=150°C 60 40 20 TA=125°C 10 0 1 10 100 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 1000 0 50 75 100 125 TCASE (° °C) Figure 13: Power De-rating (Note F) 150 TA=25°C 80 Power (W) 1000 60 40 17 5 2 10 100 10 20 0 1 0 10 Zθ JA Normalized Transient Thermal Resistance 25 10000 100 Current rating ID(A) 80 1 25 50 75 100 125 TCASE (° °C) Figure 14: Current De-rating (Note F) 150 0.00001 0.001 0.1 10 0 1000 18 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=55°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 1 : Mar. 2012 www.aosmd.com Page 5 of 6 AON6280 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds Rev 1 : Mar. 2012 www.aosmd.com Page 6 of 6