STANSON STP4803

STP4803
Dual P Channel Enhancement Mode MOSFET
-5.2A
DESCRIPTION
STP4803 is the dual P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as LCD backlight, notebook
computer power management, and other battery powered circuits.
FEATURE
PIN CONFIGURATION
SOP-8
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-30V/-5.2A, RDS(ON) = 38mΩ (Typ.)
@VGS =-10V
-30V/-4.0A, RDS(ON) = 52mΩ
@VGS = -4.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOP-8 package design
PART MARKING
SOP-8
ORDERING INFORMATION
Part Number
Package
Part Marking
STP4803
SOP-8
STP4803
※ Process Code : A ~ Z ; a ~ z
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4803 2008. V1
STP4803
Dual P Channel Enhancement Mode MOSFET
-5.2A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
ID
-5.2
-4.2
A
IDM
-30
A
IS
-2.3
A
PD
2.7
1.8
W
TJ
-55/150
℃
Storgae Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
70
Continuous Drain Current
(TJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
Continuous Source Current
(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operation Junction Temperature
℃/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4803 2008. V1
STP4803
Dual P Channel Enhancement Mode MOSFET
-5.2A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
V(BR)DSS
VGS=0V,ID=-250uA
-30
VGS(th)
VDS=VGS,ID=-250 uA
-1.0
IGSS
Zero Gate Voltage Drain
Current
On-State Drain Current
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
V
-3.0
V
VDS=0V,VGS=±20V
±100
nA
IDSS
TJ=55℃
VDS=-30V,VGS=0V
-1
VDS=-30V,VGS=0V
-5
ID(on)
VDS=-5V,VGS=10V
Drain-source On-Resistance
RDS(on)
VGS=-10V, ID=-5.2A
VGS=-4.5V,ID=-4.0A
0.038
0.052
Ω
Forward Tran Conductance
gfs
VDS=-10V,ID=-5.0A
9.0
S
Diode Forward Voltage
VSD
IS=-2.0A,VGS=0V
-0.8 -1.2
V
Gate Leakage Current
-25
uA
0
A
Dynamic
Total Gate Charge
Qg
15
VDS=-15V,VGS=-10V
ID≡-5.0A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
2.0
Input Capacitance
Ciss
680
Output Capacitance
Coss
Reverse TransferCapacitance
Crss
Turn-On Time
td(on)
Turn-Off Time
tr
td(off)
VDS =-15V,VGS=0V
f=1MHz
25
4.0
nC
120
pF
75
VDD=15V,RL=15Ω
ID=-1.0A,VGEN=-10V
RG=6Ω
tf
7.0
15
10
20
40
80
20
40
nS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4803 2008. V1
STP4803
Dual P Channel Enhancement Mode MOSFET
-5.2A
TYPICAL CHARACTERICTICS (25℃ Unless Note)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4803 2008. V1
STP4803
Dual P Channel Enhancement Mode MOSFET
-5.2A
TYPICAL CHARACTERICTICS (25℃ Unless Note)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4803 2008. V1
STP4803
Dual P Channel Enhancement Mode MOSFET
-5.2A
TYPICAL CHARACTERICTICS (25℃ Unless Note)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4803 2008. V1
STP4803
Dual P Channel Enhancement Mode MOSFET
-5.2A
SOP-8 PACKAGE OUTLINE
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4803 2008. V1