ST3406SRG N Channel Enhancement Mode MOSFET 5.4A DESCRIPTION ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. FEATURE PIN CONFIGURATION SOT-23 3 D G S 1 2 1.Gate 2.Source 30V/5.4A, RDS(ON) = 26mΩ(Typ.) @VGS = 10V 30V/4.6A, RDS(ON) = 38mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 3.Drain PART MARKING SOT-23 3 A6YA 1 Y: Year Code 2 A: Week Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST3406SRG 2006. V1 ST3406SRG N Channel Enhancement Mode MOSFET 5.4A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V ID 5.4 3.2 A IDM 25 A Continuous Source Current (Diode Conduction) IS 1.7 A TA=25℃ TA=70℃ PD 2.0 1.3 W TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 90 Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Operation Junction Temperature ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST3406SRG 2006. V1 ST3406SRG N Channel Enhancement Mode MOSFET 5.4A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min V(BR)DSS VGS=0V,ID=-250uA 30 VGS(th) VDS=VGS,ID=250uA 1.0 IGSS Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current IDSS V 3.0 V VDS=0V,VGS=±20V ±100 nA VDS=24V,VGS=0V 1 VDS=24V,VGS=0V TJ=55℃ 10 uA Drain-source On-Resistance RDS(on) VGS=10V,ID=4.0A VGS=4.5V,ID=3.6A 26 38 mΩ Forward Transconductance gfs VDS=4.5V,ID=5.4A 12 S Diode Forward Voltage VSD IS=1.7A,VGS=0V 0.8 1.2 10 18 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time VDS=15V VGS=10V ID≡6.7A 1.6 Ciss Coss Crss VDS=15V VGS=0V F=1MHz 450 240 38 td(on) VDD=15V RL=15Ω ID=1.0A VGEN=10V RG=6Ω 7 15 10 20 20 40 11 20 tr td(off) tf nC 3.1 pF nS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST3406SRG 2006. V1 ST3406SRG N Channel Enhancement Mode MOSFET 5.4A TYPICAL CHARACTERICTICS (25℃ unless otherwise noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST3406SRG 2006. V1 ST3406SRG N Channel Enhancement Mode MOSFET 5.4A TYPICAL CHARACTERICTICS (25℃ unless otherwise noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST3406SRG 2006. V1 ST3406SRG N Channel Enhancement Mode MOSFET 5.4A SOT-23 PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST3406SRG 2006. V1