Datasheet

AOL1432
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1432 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
VDS (V) =25V
ID = 44 A (VGS = 10V)
RDS(ON) < 8.5 mΩ (VGS = 10V)
RDS(ON) < 14 mΩ (VGS = 4.5V)
-RoHS Compliant
-Halogen and Antimony Free Green Device*
UIS Tested
Rg,Ciss,Coss,Crss Tested
D
Ultra SO-8TM Top View
D
Bottom tab
connected to
drain
S
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
G
Current
C
Avalanche Current
Power Dissipation B
Power Dissipation
ID
IDM
A
C
TC=25°C
V
A
31
100
IDSM
IAR
10
A
25
EAR
94
A
mJ
30
PD
TC=100°C
TA=25°C
Junction and Storage Temperature Range
2
°C
-55 to 175
Symbol
Alpha & Omega Semiconductor, Ltd.
W
1.3
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
W
15
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
A
Maximum Junction-to-Ambient
Maximum Junction-to-Case B
±20
12
TA=70°C
Repetitive avalanche energy L=0.3mH
Units
V
44
TC=100°C
TA=25°C
C
Maximum
25
RθJA
RθJC
Typ
14.2
48
3.5
Max
20
60
5
Units
°C/W
°C/W
°C/W
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AOL1432
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Conditions
Min
ID=250uA, VGS=0V
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
ID(ON)
On state drain current
VGS=10V, VDS=5V
1
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
TJ=125°C
VGS=4.5V, ID=20A
VDS=5V, ID=10A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
nA
1.8
3
V
6.5
8.5
9.5
12
11.5
14
A
35
0.72
1430
VGS=0V, VDS=12.5V, f=1MHz
VGS=10V, VDS=12.5V, ID=20A
mΩ
mΩ
S
1
V
55
A
1716
pF
319
pF
215
VGS=0V, VDS=0V, f=1MHz
µA
100
100
VGS=10V, ID=30A
RDS(ON)
5
1
Units
V
TJ=55°C
Gate-Body leakage current
Max
25
VDS=20V, VGS=0V
VGS(th)
IS
Typ
pF
1.2
2
Ω
26.4
32
nC
13.5
nC
3.9
nC
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
7.75
tD(on)
Turn-On DelayTime
6.5
ns
tr
Turn-On Rise Time
10
ns
22.7
ns
6.2
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=10V, VDS=12.5V, RL=0.6Ω,
RGEN=3Ω
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=100A/µs
23.06
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
15.25
27.5
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
* This device is guaranteed green after date code 8P11 (June 1 ST 2008)
Rev 3: Jul 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOL1432
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
100
5V
10V
4.5V
6V
80
VDS=5V
50
7V
ID(A)
40
60
ID (A)
VGS=4V
40
30
125°C
20
25°C
3.5V
20
10
3V
0
0
0
1
2
3
4
0
5
1
2
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
18
1.8
VGS=4.5V
14
RDS(ON) (mΩ)
Normalized On-Resistance
16
12
10
VGS=10V
8
6
4
2
1.6
VGS=10V, 20A
1.4
1.2
VGS=4.5V, 20A
1
0
0
10
0.8
20
30
40
50
60
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
30
ID=20A
1.0E+01
25
1.0E+00
IS (A)
RDS(ON) (mΩ)
20
125°C
15
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
10
25°C
1.0E-04
5
1.0E-05
0
0.0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOL1432
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2000
10
Ciss
1600
Capacitance (pF)
8
VGS (Volts)
1800
VDS=12.5V
ID=20A
6
4
1400
1200
1000
800
Coss
600
400
2
200
Crss
0
0
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
30
5
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
25
200
1000.0
TJ(Max)=175°C, TC=25°C
160
100µs
1ms
10.0
RDS(ON)
limited
10ms
120
80
DC
1.0
40
0.1
0.1
1
10
100
VDS (Volts)
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=5°C/W
0
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
TJ(Max)=175°C
TC=25°C
10µs
Power (W)
ID (Amps)
100.0
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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AOL1432
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
40
Power Dissipation (W)
ID(A), Peak Avalanche Current
50
30
TA=25°C
20
10
30
20
10
0
0
0.00001
0.0001
0
0.001
25
50
50
40
40
Power (W)
Current rating ID(A)
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
30
20
10
TA=25°C
30
20
10
0
0
25
50
75
100
125
150
0
0.001
175
TCASE (°C)
Figure 14: Current De-rating (Note B)
10
ZθJA Normalized Transient
Thermal Resistance
50
1
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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AOL1432
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
I AR
Vdd
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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