UNISONIC TECHNOLOGIES CO., LTD 7N60L Power MOSFET 7.4 Amps, 600Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES * RDS(ON) < 1.2Ω @VGS = 10 V * Ultra low gate charge (typical 29 nC ) * Low reverse transfer Capacitance ( CRSS = typical 16pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free 7N60LL-x-TA3-T 7N60LG-x-TA3-T 7N60LL-x-TF1-T 7N60LG-x-TF1-T 7N60LL-x-TF3-T 7N60LG-x-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 TO-220F Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tube 1 of 8 QW-R502-189.D 7N60L Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-189.D 7N60L Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 7.4 A Continuous Drain Current ID 7.4 A Pulsed Drain Current (Note 1) IDM 29.6 A 600 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 14.2 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 142 W Power Dissipation PD TO-220F/TO-220F1 48 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 22mH, IAS = 7.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤7.4A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220 Junction to Ambient TO-220F/TO-220F1 TO-220 Junction to Case TO-220F/TO-220F1 SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS 62.5 62.5 0.88 2.6 UNIT °C/W °C/W °C/W °C/W 3 of 8 QW-R502-189.D 7N60L Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate- Source Leakage Current Reverse SYMBOL BVDSS IDSS TEST CONDITIONS VGS = 0V, ID = 250μA VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V IGSS VGS = -30V, VDS = 0V ID = 250μA, Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.7A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0 MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD =300V, ID =7.4A, RG =25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=480V, ID=7.4A, VGS=10 V Gate-Source Charge QGS (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0V, IS = 7.4 A, dIF / dt = 100A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 600 1 100 -100 0.67 2.0 16 29 7 14.5 320 2.4 V μA nA nA V/°C 4.0 1.2 V Ω 1400 180 21 pF pF pF 70 170 140 130 38 ns ns ns ns nC nC nC 1.4 V 7.4 A 29.6 A ns μC 4 of 8 QW-R502-189.D 7N60L Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-189.D 7N60L Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RG 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Fig. 4B Unclamped Inductive Switching Waveforms 6 of 8 QW-R502-189.D 7N60L Power MOSFET TYPICAL CHARACTERISTICS On-Region Characteristics Transfer Characteristics VGS 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V Bottorm:5.5V 101 100 Notes: 1. 250µs Pulse Test 2. TC=25°C 10-1 10 -1 Drain Current, ID (A) Drain Current, ID (A) Top: 101 100 10-1 2 1 0 10 10 Drain-Source Voltage, VDS (V) 4 6 8 10 Gate-Source Voltage, VGS (V) On-Resistance Variation vs. Drain Current and Gate Voltage Body Diode Forward Voltage Variation vs. Source Current and Temperature 2.5 101 VGS=10V 2.0 Notes: 1. VDS=50V 2. 250µs Pulse Test VGS=20V 1.5 1.0 100 0.5 0.0 150°C Note: TJ=25°C 0 5 10 15 20 10-1 25 0.2 Notes: 1. VGS=0V 2. 250µs Pulse Test 0.4 0.6 0.8 1.0 Source-Drain Voltage, VSD (V) 1.2 Capacitance (pF) ID, Drain Current (A) Drain Current, ID (A) 25°C UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-189.D 7N60L Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. 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