AOK60N30 300V,60A N-Channel MOSFET General Description The AOK60N30 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. Features VDS ID (at VGS=10V) 350@150℃ 60A RDS(ON) (at VGS=10V) < 0.056Ω D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current 1/5 VGS TC=25°C TC=100°C ID AOK60N30 300 Units V ±30 V 60 40 A Pulsed Drain Current C IDM Avalanche Current C IAR 9.5 A Repetitive avalanche energy C EAR 1353 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case EAS dv/dt 2707 5 658 mJ V/ns W 5.3 -55 to 150 W/ oC °C 300 °C AOK60N30 40 0.5 0.19 Units °C/W °C/W °C/W PD TJ, TSTG TL Symbol RθJA RθCS RθJC 200 www.freescale.net.cn AOK60N30 300V,60A N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 300 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 350 V ID=250µA, VGS=0V 0.26 V/ oC VDS=300V, VGS=0V 1 VDS=240V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=30A gFS Forward Transconductance VDS=40V, ID=30A VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM 3.5 4.1 nΑ V 0.042 0.056 Ω 52 V Maximum Body-Diode Continuous Current 60 A Maximum Body-Diode Pulsed Current 200 A Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 3550 4438 5330 pF VGS=0V, VDS=25V, f=1MHz 410 593 770 pF 22 38 54 pF VGS=0V, VDS=0V, f=1MHz 0.8 1.7 2.6 Ω 70 88 106 nC SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 0.68 S 1 DYNAMIC PARAMETERS Ciss Input Capacitance Coss ±100 2.9 µA VGS=10V, VDS=240V, ID=60A 21 nC 28 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=60A,dI/dt=100A/µs,VDS=100V 250 320 390 Qrr Body Diode Reverse Recovery Charge IF=60A,dI/dt=100A/µs,VDS=100V 11 14.5 18 Body Diode Reverse Recovery Time VGS=10V, VDS=150V, ID=60A, RG=25Ω 88 ns 222 ns 224 ns 132 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=9.5A, VDD=150V, RG=25Ω, Starting TJ=25°C 2/5 www.freescale.net.cn AOK60N30 300V,60A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 140 VDS=40V 10V -55°C 7V 120 100 100 60 ID(A) ID (A) 6.5V 80 6V 125°C 10 25°C 40 1 5.5V 20 VGS=5V 0 0.1 0 5 10 15 20 25 30 2 4 6 8 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 3 Normalized On-Resistance 0.10 0.08 VGS=10V RDS(ON) (Ω Ω) 10 0.06 0.04 0.02 0.00 2.5 2 VGS=10V ID=30A 1.5 1 0.5 0 0 20 40 60 80 100 120 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -100 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.2 -50 0 1.0E+02 40 1.0E+00 IS (A) BVDSS (Normalized) 1.0E+01 1.1 1 125°C 1.0E-01 25°C 1.0E-02 0.9 1.0E-03 0.8 1.0E-04 -100 3/5 -50 0 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temparature 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOK60N30 300V,60A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 Ciss VDS=240V ID=60A Capacitance (pF) VGS (Volts) 12 9 6 Coss 1000 Crss 100 3 0 10 0 30 60 90 120 150 0.1 Current rating ID(A) Qg (nC) Figure 7: Gate-Charge Characteristics 75 1000 60 100 ID (Amps) 45 30 15 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 10µs RDS(ON) limited 100µs 1ms 10 10ms 100ms DC 1 0.1 0 1 TJ(Max)=150°C TC=25°C 0.01 0 25 50 75 100 125 TCASE (°C) Figure 9: Current De-rating (Note B) 150 1 10 100 1000 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOK60N30 (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.19°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse T 0.001 1E-06 4/5 1E-05 0.0001 0.001 0.01 0.1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOK60N30 (Note F) 1 10 www.freescale.net.cn AOK60N30 300V,60A N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 5/5 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.freescale.net.cn