Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTT20N06
Power MOSFET
20A, 60V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UTT20N06 is an N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide customers
with a minimum on-state resistance and superior switching
performance. It also can withstand high energy pulse in the
avalanche and commutation mode.
The UTC UTT20N06 is universally applied in low voltage, such as
automotive, high efficiency switching for DC/DC converters and DC
motor control.

FEATURES
* RDS(ON) <46mΩ @VGS = 10 V
* Typically 58pF low CRSS
* High switching speed
* Typically 21.2nC low gate charge

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT20N06L-TA3-T
UTT20N06G-TA3-T
UTT20N06L-TM3-T
UTT20N06G-TM3-T
UTT20N06L-TN3-R
UTT20N06G-TN3-R
UTT20N06L-TQ2-T
UTT20N06G-TQ2-T
UTT20N06L-TQ2-R
UTT20N06G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220
TO-252
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
Tube
Tape Reel
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UTT20N06

Power MOSFET
MARKING
UNISONIC TECHNOLOGIES CO., LTD
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UTT20N06

Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous
ID
20
A
Drain Current
Pulsed
IDM
80
A
Single Pulsed Avalanche Energy
EAS
170
mJ
TO-220/TO-263
89
W
Power Dissipation
PD
TO-251/TO-252
50
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
TO-220/TO-263
Junction to Ambient
TO-251/TO-252
TO-220/TO-263
Junction to Case
TO-251/TO-252

SYMBOL
θJA
θJC
RATINGS
62
110
1.4
2.5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=60V, VGS=0V
VDS=48V, VGS=0V, TC=125°C
VGS=+16V, VDS=0V
VGS=-16V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=20A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=30V, ID=20A,
Gate to Source Charge
QGS
IG=3.33mA
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=1A, RG=25Ω,
Rise Time
tR
VGS=10V
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=20A, VGS=0V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
60
2.0
37.5
1
10
+100
-100
V
µA
µA
nA
nA
4.0
46
V
mΩ
725 1015
213 300
58
120
pF
pF
pF
21.2
5.6
7.3
9.5
60.5
27.1
37.1
80
nC
nC
nC
ns
ns
ns
ns
1.2
A
A
V
30
120
20
80
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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