ROHM RB531XN

Schottky Barrier Diode
RB531XN
●Dimensions (Unit : mm)
●Applications
Rectify small power
●Land size figure (Unit : mm)
0.65
2.0±0.2
Each
lead has same dimension
各リードとも
同寸法
0.25± 0.1
●Features
1)Small mold type.(UMD6)
2)Low VF
3)High reliability
(5)
(4)
2.1±0.1
1.25±0.1
0.9
(6)
0.15±0.05
1.6
0.05
0.65
0.35
0~0.1
(2)
0.65
●Construction
Silicon epitaxial
UMD6
0.1Min
(1)
(3)
0.65
0.7
1.3±0.1
0.9±0.1
ROHM : UMD6
JEDEC : SOT-363
JEITA : SC-88
dot (year week factory)
●Structure
●Taping specifications (Unit : mm)
φ1.5±0.1
0
2.0±0.05
0.3±0.1
2.4±0.1
3.5±0.05
0~0.5
5.5±0.2
2.4±0.1
2.45±0.1
φ1.1±0.1
4.0±0.1
2.2±0.1
8.0±0.2
1.75±0.1
4.0±0.1
1.15±0.1
●Absolute maximum ratings (Ta=25℃)
Parameter
Reverse voltage (DC)
Average rectified forward voltage
Forward voltage surge peak (60Hz/1cyc)(*1)
Junction temperature
Storage temperature
Limits
Symbol
VR
Io
IFSM
Tj
Tstg
Unit
V
mA
A
℃
℃
30
100
1
125
-40 to +125
(*1) Rating of per diode
●Electical voltage (Ta=25℃)
Parameter
Forward voltage
Conditions
Symbol
VF1
Min.
Typ.
Max.
Unit
-
-
0.30
V
IF=10mA
VF2
-
-
0.43
V
IR
-
-
20
µA
IF=100mA
VR=10V
Reverse current
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1/3
2009.02 - Rev.E
RB531XN
100
100000
Ta=75℃
10
1
Ta=-25℃
0.1
Ta=25℃
0.01
Ta=125℃
1000
Ta=75℃
100
Ta=25℃
10
Ta=-25℃
1
0.1
0.01
0.001
0
100
200
300
400
0
500
1
30
0
330
320
AVE:340.2mV
40
35
30
25
20
15
AVE:4.775uA
10
5
0
310
10
5
AVE:5.60A
0
Ifsm
8.3ms 8.3ms
1cyc
5
0
10
28
27
AVE:29.58pF
26
Ifsm
t
5
100
1
Per chip
REVERSE POWER
DISSIPATIONPR (w)
IF=10mA
FORWARD POWER
DISSIPATION:Pf(W)
Mounted on epoxy board
100
0.3
Per chip
Rth(j-a)
Rth(j-c)
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.3
1000
1ms
29
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
IFSM DISPERSION MAP
IM=1mA
30
0
1
10
31
10
PEAK SURGE
FORWARD CURRENT:IFSM(A)
8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
15
100
32
Ct DISPERSION MAP
10
1cyc
20
Ta=25℃
f=1MHz
VR=0V
n=10pcs
33
IR DISPERSION MAP
Ifsm
15
25
VF DISPERSION MAP
20
10
34
Ta=25℃
VR=10V
n=30pcs
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
340
5
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
35
45
REVERSE CURRENT:VR(uA)
Ta=25℃
IF=100mA
n=30pcs
350
PEAK SURGE
FORWARD CURRENT:IFSM(A)
20
50
360
FORWARD VOLTAGE:VF(mV)
10
10
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
f=1MHz
10000
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=125℃
100
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(mA)
1000
Data Sheet
0.2
D=1/2
Sin(θ=180)
DC
0.1
0.2
D=1/2
DC
Sin(θ=180)
0.1
time
300us
1
0.001
0.1
10
TIME:(s)
Rth-t CHARACTERISTICS
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1000
0
0
0
0.1
0.2
0.3
0.4
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
2/3
0.5
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
2009.02 - Rev.E
RB531XN
AVERAGE RECTIFIED
FORWARD CURRENT Io(A)
Per chip
0.2
0A
0V
0.3
Io
t
DC
T
VR
D=t/T
VR=15V
Tj=125℃
D=1/2
0.1
Sin(θ=180)
0A
0V
Per chip
AVERAGE RECTIFIED
FORWARD CURRENT Io(A)
0.3
Data Sheet
Io
t
DC
0.2
T
VR
D=t/T
VR=15V
Tj=125℃
D=1/2
0.1
Sin(θ=180)
0
0
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve゙
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©2009 ROHM Co., Ltd. All rights reserved.
0
25
50
75
100
125
CASE TEMPARATURE:Tc(℃)
Derating Curve
3/3
2009.02 - Rev.E
Appendix
Notes
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The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you
wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM
upon request.
Examples of application circuits, circuit constants and any other information contained herein illustrate the
standard usage and operations of the Products. The peripheral conditions must be taken into account
when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document. However, should
you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and examples
of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to
use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information.
The Products specified in this document are intended to be used with general-use electronic equipment
or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or
malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard against the
possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as
derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your
use of any Product outside of the prescribed scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or system
which requires an extremely high level of reliability the failure or malfunction of which may result in a direct
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Appendix-Rev4.0