Schottky Barrier Diode RB481Y ●Dimensions (Unit : mm) ●Land size figure (Unit : mm) 0.5 0.45 ●Applications Low current rectification ●Features 1)Ultra small mold type. (EMD4) 2)Low VF 3)High reliability 1.55 1.6±0.1 1.6±0.05 0.22±0.05 0.13±0.05 (4) (3) 1.2±0.1 ●Construction Silicon epitaxial planar (1) 1.6±0.1 1.0 0～0.1 EMD4 (2) 0.5 ●Structure 0.5 1.0±0.1 0.5±0.05 ROHM : EMD4 JEITA : SC-75A Size dot (year week factory) ●Taping specifications (Unit : mm) φ1.5±0.1 0 2.0±0.05 0.3±0.1 φ0.8±0.1 4.0±0.1 1.65±0.01 5.5±0.2 3.5±0.05 1PIN 0～0.1 1.65±0.1 1.65±0.1 8.0±0.2 1.75±0.1 4.0±0.1 0.65±0.1 ●Absolute maximum ratings (Ta=25℃) Parameter Reverse voltage (DC) Average rectified forward current（*1） Forward current surge peak （60Hz・1cyc）（*1） Junction temperature Storage temperature Limits Symbol VR Io IFSM Tj Tstg Unit V mA A ℃ ℃ 30 100 1 125 -40 to +125 (*1) Rating of per diode ●Electrical characteristics (Ta=25 ℃) Parameter Conditions Symbol VF1 Min. Typ. Max. Unit - 0.17 0.28 V IF=1mA VF2 - 0.24 0.33 V IF=10mA VF3 - 0.34 0.43 V IR - 4 30 µA IF=100mA VR=10V Forward voltage Reverse current www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.02 - Rev.D RB481Y Ta=125℃ 100 Ta=75℃ 10 1 Ta=-25℃ 0.1 Ta=25℃ 0.01 10000 1000 Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 1 0.1 f=1MHz 10 0.01 100 200 300 400 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 500 360 1 30 0 320 40 CAPACITANCE BETWEEN TERMINALS:Ct(pF) AVE:340.2mV Ta=25℃ VR=10V n=30pcs 45 REVERSE CURRENT:VR(uA) 340 35 30 25 20 15 AVE:4.775uA 10 5 32 31 30 29 28 AVE:29.58pF 27 26 10 10 5 AVE:5.60A PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc Ifsm 15 Ifsm 8.3ms 8.3ms 1cyc 5 0 0 1000 10 100 1 IF=100mA 100 0.5 Per chip FORWARD POWER DISSIPATION:Pf(W) Mounted on epoxy board 10 TIME:t(ms) IFSM-t CHARACTERISTICS 0.3 Rth(j-a) Rth(j-c) t 5 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISPERSION MAP IM=10mA Ifsm 0 1 1ms 33 Ct DISPERSION MAP 10 100 Ta=25℃ f=1MHz VR=0V n=10pcs 34 IR DISPERSION MAP VF DISPERSION MAP 20 20 25 0 310 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 35 50 Ta=25℃ IF=100mA n=30pcs 350 330 10 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS Per chip REVERSE POWER DISSIPATIONPR (w) 0 PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) Ta=125℃ 0.001 FORWARD VOLTAGE:VF(mV) 100 100000 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Data Sheet 0.2 D=1/2 Sin(θ＝180) 0.1 DC 0.4 0.3 DC 0.2 D=1/2 Sin(θ＝180) 0.1 time 300us 10 0.001 0.1 10 TIME:(s) Rth-t CHARACTERISTICS www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 1000 0 0 0 0.1 0.2 0.3 0.4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pｆ CHARACTERISTICS 2/3 0.5 0 10 20 30 REVERSE VOLTAGE：VR(V) VR-PR CHARACTERISTICS 2009.02 - Rev.D RB481Y Per chip 0.4 0A 0V t DC T 0.3 VR D=t/T VR=15V Tj=125℃ D=1/2 0.2 0.1 0.5 Io Sin(θ＝180) 0 AVERAGE RECTIFIED FORWARD CURRENT Io(A) AVERAGE RECTIFIED FORWARD CURRENT Io(A) 0.5 Per chip 0.4 Data Sheet 0A 0V Io t DC T 0.3 VR D=t/T VR=15V Tj=125℃ D=1/2 0.2 0.1 Sin(θ＝180) 0 0 25 50 75 100 125 AMBIENT TEMPERATURE：Ta(℃) Derating Curve www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 0 25 50 75 100 CASE TEMPARATURE：Tc(℃) Derating Curve 3/3 125 2009.02 - Rev.D Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. 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The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2009 ROHM Co.,Ltd. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster @ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix-Rev4.0