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KSMU3P20
KERSMI ELECTRONIC CO.,LTD.
-200V P-channel MOSFET
Description
This P-channel MOSFET s use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
1)
2)
3)
4)
BVDSS
RDSON
-200V
2.7Ω
ID
-2.4A
Low gate charge.
Green device available.
Advanced high cell denity trench technology for ultra RDS(ON)
Excellent package for good heat dissipation.
TO-251
Absolute Maximum Ratings TC=25℃,unless otherwise noted
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
-200
VGS
Gate-Source Voltage
±20
V
V
Continuous Drain Current-1
-2.4
Continuous Drain Current-T=100℃
-1.52
Pulsed Drain Current2
-9.6
EAS
Single Pulse Avalanche Energy3
3.7
PD
Power Dissipation4
37
TJ, TSTG
Operating and Storage Junction Temperature
Range
-55 to
+150
ID
A
mJ
W
℃
Thermal Characteristics
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KSMU3P20
KERSMI ELECTRONIC CO.,LTD.
-200V P-channel MOSFET
Symbol
Parameter
Ratings
RƟJC
Thermal Resistance ,Junction to Case1
3.4
RƟJA
Thermal Resistance, Junction to Ambient1
110
Units
℃/W
Package Marking and Ordering Information
Part NO.
Marking
Package
KSMU3P20
KSMU3P20
TO-251
Electrical Characteristics TC=25℃
Symbol
Parameter
unless otherwise noted
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
-200
—
—
IDSS
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
—
—
-1
IGSS
Gate-Source Leakage Current
VDS=±20V, VDS=0A
—
—
±100
v
μA
nA
VDS=VDS, ID=250μA
-3.0
—
-5.0
V
VDS=10V,ID=6A
—
2.06
2.7
VDS=2.5V,ID=5A
—
—
—
VDS=5V,ID=12A
—
1.18
—
—
190
250
—
45
60
—
7.5
10
—
8.5
25
—
35
80
—
12
35
On Characteristics
VGS(th)
RDS(ON)
GFS
GATE-Source Threshold Voltage
Drain-Source On Resistance²
Forward Transconductance
Ω
--S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
pF
Switching Characteristics
td(off)
Turn-Off Delay Time
tf
Fall Time
—
25
60
Qg
Total Gate Charge
—
6.0
8.0
Qgs
Gate-SourceCharge
VGS=4.5V, VDS=20V,
—
1.7
—
Qgd
Gate-Drain “Miller” Charge
ID=6A
—
2.9
—
ns
ns
ns
ns
nC
nC
nC
—
—
-5.0
V
—
100
—
ns
—
0.34
—
nC
td(on)
Turn-On Delay Time
tr
Rise Time
VDS=20V,
VGS=10V,RGEN=3.3Ω
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS=0V,IS =1A
IF=7A,di/dt=100A/μS
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KSMU3P20
KERSMI ELECTRONIC CO.,LTD.
-200V P-channel MOSFET
Notes:
1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper.
2. The data tested by pulse width≤300us,duty cycle≤2%
3. The EAS data shows Max.rating.The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A
4. The power dissipation is limited by 150℃ junction temperature.
Typical Characteristics TJ=25℃
Figure 1. On-Region Characteristics
Figure 3. Capacitance Characteristics
unless otherwise noted
Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation vs.
Drain Current and Gate Voltage
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KSMU3P20
KERSMI ELECTRONIC CO.,LTD.
-200V P-channel MOSFET
Figure 5. Gate Charge Characteristics
Figure 7.Breakdown Voltage Variation
vs. Temperature
Figure 6. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 8.Maximum Safe Operating Area
Figure 9. Transient Thermal Response Curve
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