Diode AOB210L-AOB298L VOLTAGE RANGE 30 t o 60 Volts CURRENT 20.0 Amperes FEATURES • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protechion Low Power Loss, High efficiency High Surge Capability High Current capacity and Low Forward Voltage Drop For use in low voltage high frequency inverters, Free wheeling, and polarity protection applications Plastic Material has UL Flammability Classification 94V-0 AOB MECHANICAL DATA • • • • • • Dimensions in inches and (millimeters) Case: ITO-200AB molded plastic Terminals: Plated Lead solderable per MIL-STD-202 Method 208 Polarity: As Marked on Body Weight: 2.24 grams (approx) Mounting Position: Any Marking: Type Number MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS • • Single Phase, half wave, 60Hz, resistive or inductive load For capacitive load derate current by 20% SYMBOLS AOB210L AOB254L AOB262L AOB282L AOB292L AOB298L UNIT Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1)@Tc=95℃ Non-Repetitive Peak Forward Surge Current 8.3ms single half sine wave superimposed on rated load (JEDEC method) Forward Voltage Drop @IF =10A,TC=25℃ Peak Reverse Current at Rated DC Blocking Voltage TC = 25℃ TC = 100℃ Typical Junction Capacitance(Note2) Typical Resistance Junction to case(Note1) Operating and Storage Temperature Range VRRM VRWM VR VR(RMS) 30 35 40 45 50 60 V 21 25 28 32 35 42 V IO 20.0 A IFSM 175 A VFM 0.55 1.0 50 650 2.8 (-55 to +150) IRM Cj RθJC TJ TSTG Notes: 1. Thermal Resistance Junction to case mounted on heatsink 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC . 0.75 V mA pF ℃/W ℃ Diode AOB210L-AOB298L VOLTAGE RANGE 30 to 60 Volts CURRENT 20.0 Ampere FIG.2-TYPICAL FORWARD CHARACTERISTICS 20 INSTANTANEOUS FORWARD CURRENT, ( A) FIG.1-FORWARD CURRENT DERATING CURVE 40 16 12 I( SRFL2050C-SRFL2060C 1.0 8 4 0 0 50 100 TC ,CASE TMPERSTRUE( ℃ ) 300 Tj =25 ℃ Pulse Width=300μs 2% duty cycle 0.1 0.1 150 0.3 0.5 0.7 1.1 0.9 VF,INSTANTANEOUS FORWARD VOLTAGE( V) FIG.3 MAX NON-REPETITIVE SURGE CURRENT 4000 8.3ms Single Half Sine-Wave JEDEC Method FIG4 TYPICAL JUNCTION CAPACITANCE PER ELEMENT Tj =25 ℃ f=1MHz C j ,CAPACITANCE( pF) 250 200 150 100 1000 50 0 1 10 NUMBER OF CYCLES AT 60 Hz 100 IR, INSTANTANOUS REVERSE CURRENT,( mA ) IFSM ,PEAK FORWARD SURGE CURRENT, ( A) SRFL2030C-SRFL2045C 10 AV ) ,AVERAGE FORWARD CURRENT, ( A) RATINGE AND CHARACTERISTIC CURVES SRFL2030C THRU SRFL2060C 10 100 0.1 100 FIG.5-TYPICAL REVERSE CHARACTERISTICS Tj =100 ℃ T j =75℃ 1.0 0.1 0.01 0 T j =25℃ 40 80 120 PERCENT OF RATED REVERSE VOLTAGE,( % ) 1.0 10 VR,REVERSE VOLTAGE( v) 100