UNISONIC TECHNOLOGIES CO., LTD 50N06-F Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 50N06-F is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances. TO-220 1 TO-251 FEATURES * RDS(ON) < 23mΩ @ VGS = 10 V, ID = 25 A * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability 1 1 TO-252 SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 50N06L-TA3-T 50N06G-TA3-T TO-220 50N06L-TM3-R 50N06G-TM3-R TO-251 50N06L-TN3-R 50N06G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-A83.B 50N06-F Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER RATINGS UNIT 60 V ±20 V TC = 25°C 50 A Continuous Drain Current ID TC = 100°C 35 A Pulsed Drain Current (Note 2) IDM 200 A Single Pulsed (Note 3) EAS 480 mJ Avalanche Energy 13 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 7 V/ns TO-220 120 W Power Dissipation (TC=25°C) PD TO-251/TO-252 46 W Junction Temperature TJ +150 °C Operation and Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by TJ 3. L=0.38mH, IAS=50A, VDD= 25V, RG=20Ω, Starting TJ=25°C 4. ISD ≤50A, di/dt ≤300A/μs, VDD ≤BVDSS, Starting TJ=25°C Drain-Source Voltage Gate-Source Voltage SYMBOL VDSS VGSS THERMAL DATA Junction to Ambient Junction to Case PARAMETER TO-220 TO-251/TO-252 TO-220 TO-251/TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATING 62 100 1.24 2.7 UNIT °C/W °C/W °C/W °C/W 2 of 8 QW-R502-A83.B 50N06-F Power MOSFET ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL TEST CONDITIONS BVDSS IDSS Forward Reverse VGS = 0 V, ID = 250 μA VDS = 60 V, VGS = 0 V VGS = 20V, VDS = 0 V IGSS VGS = -20V, VDS = 0 V I = 250 μA, △BVDSS/△TJ D Referenced to 25°C Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 25 A DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS = 0 V, VDS = 25 V Output Capacitance COSS f = 1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG VDS = 50V, VGS = 10 V Gate-Source Charge QGS ID = 1.3A (Note 1, 2) Gate-Drain Charge QGD Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD = 30V, ID =0.5 A, RG = 25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD IS = 50A, VGS = 0 V Reverse Recovery Time tRR IS = 50A, VGS = 0 V dIF / dt = 100 A/μs Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 60 10 100 -100 0.07 2.0 V μA nA nA V/°C 18 4.0 23 V mΩ 900 430 80 1220 550 100 pF pF pF 60 9 20 60 180 300 200 80 80 220 350 250 nC nC nC ns ns ns ns 50 A 200 A 1.5 V ns μC 54 81 3 of 8 QW-R502-A83.B 50N06-F Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver Same Type as D.U.T. VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-A83.B 50N06-F Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RG 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Fig. 4B Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-A83.B 50N06-F Drain Current, ID (A) TYPICAL CHARACTERISTICS Drain Current, ID (A) Power MOSFET On State Current vs. Allowable Case Temperature 70 60 50 40 30 20 VGS=10V VGS=20V 10 0 0 20 30 40 50 60 70 80 90100 120140160 Drain Current, ID (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Reverse Drain Current, ISD (A) Drain to Source OnResistance,RDS(ON) (mΩ) On-Resistance Variation vs. Drain Current and Gate Voltage 102 150°C 101 25°C *Note: 1. VGS=0V 2. 250µs Test 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Source-Drain Voltage, VSD (V) 6 of 8 QW-R502-A83.B 50N06-F 1.2 Breakdown Voltage Variation vs. Junction Temperature 1.1 1.0 0.9 *Note: 1. VGS=0V 2. ID=250µA 0.8 150 200 -100 -50 0 50 100 Junction Temperature, TJ (°C) Drain-Source On-Resistance, RDS(ON), (Normalized) Drain-Source Breakdown Voltage, BVDSS(Normalized) TYPICAL CHARACTERISTICS(Cont.) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 50 100µs 1ms 102 10ms 1 10 10ms *Note: 1. Tc=25°C 2. TJ=150°C -1 3. Single Pulse 10 100 10-1 100 101 102 Drain-Source Voltage, VDS (V) Drain Current, ID (A) Drain Current , ID,(A) 10 Operation in This Area by RDS (on) *Note: 1. VGS=10V 2. ID=25A -50 0 50 100 150 Junction Temperature, TJ (°C) Maximum Drain Current vs. Case Temperature Maximum Safe Operating 3 On-Resistance Variation vs. Junction Temperature 40 30 20 10 0 25 75 50 100 125 Case Temperature, TC (°C) 150 Thermal Response, ZθJC (t) Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-A83.B 50N06-F Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-A83.B