ET- 50N06 N-Channel MOSFET Features • RDS(on) (Max 0.023 Ω)@VGS=10V • Gate Charge (Typical 25nC) • Maximum Junction Temperature Range (175 °C) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25 °C) Continuous Drain Current(@TC = 100 °C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature Storage Temperature Value Units 60 50 35 200..1) ±20 493..2) 12.0..1) 7.0..3) 120 0.8 -55 ~ 175 150 V A A A V mJ mJ V/ns W W/°C °C °C TSTG TJ Notes 1).. Repeativity rating : pulse width limited by junction temperature 2).. L = 230 uH, IAS = 50 A, VDD = 50 V, RG = 25 Ω , Starting TJ = 25 °C 3).. ISD ≤ 50 A, di/dt ≤ 300 A/us, VDD ≤ BVDSS, Starting TJ = 25 °C 1 BEIJING ESTEK ELECTRONICS CO.,LTD ET- 50N06 Thermal Characteristics Symbol Parameter Min. Value Typ. Max. RθJC Thermal Resistance, Junction-toCase - - 1.24 RθJA Thermal Resistance, Junction-toAmbient* - 0.5 - RθJA Thermal Resistance, Junction-toAmbient - - 62.5 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) Source-Drain Diode Characteristics and Maximum Ratings Symbol Parameter Test Conditions Maximum Continuous Source-Drain Diode Forward IS ISM VSD trr Qrr Current Maximum Pulsed Source-Drain Diode Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = 50 A, VGS = 0 V IS = 50 A, VGS = 0 V, dIF/dt = 100 A/us 2 Min Typ Max - - 50 - - 200 - - 1.5 - 50 - - 70 - Units A V ns uC BEIJING ESTEK ELECTRONICS CO.,LTD ET- 50N06 Electrical Characteristics ( TC = 25 °C unless otherwise noted ) Symbol Parameter Off Characteristics BVDSS Drain-Source Breakdown Voltage ∆BVDSS/ Breakdown Voltage ∆TJ Temperature coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage, Forward Gate-source Leakage, Reverse On Characteristics VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-state Resis-tance Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Dynamic Characteristics td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge(Miller Charge) Test Conditions Min Typ 60 - - V - 0.07 - V/°C VDS = 60 V, VGS = 0 V VDS = 48 V, TC = 125 °C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V - - 10 uA - - 100 uA - - 100 nA - - -100 nA VDS = VGS, ID = 250 uA VGS = 10 V, ID = 25.0 A 2.0 - 4.0 V VGS = 0 V, ID = 250 uA ID = 250 uA, referenced to 25 °C VGS = 0 V, VDS =25 V, f = 1 MHz VDD = 30 V, ID =25.0 A, RG =25 Ω Pulse Width ≤ 300us, Q > 50 VDS = 48 V, VGS = 10 V, ID = 50 A 3 Max - 0.018 0.022 - 1050 1365 460 600 70 90 - 20 100 80 85 32 8 12 50 210 170 180 42 - Units Ω pF ns nC BEIJING ESTEK ELECTRONICS CO.,LTD