UNISONIC TECHNOLOGIES CO., LTD 50N06 MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances. FEATURES 1 TO-220F *Pb-free plating product number: 50N06L * RDS(ON) = 23mΩ@VGS = 10 V * Ultra low gate charge ( typical 30 nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Order Number Normal Lead Free Plating 50N06-TA3-T 50N06L-x-TA3-T 50N06-TF3-T 50N06L-x-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Packing Tube Tube 50N06L-TA3-T (1)Packing Type (1) T: Tube (2)Package Type (2) TA3: TO-220, TF3: TO-220F (3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-088,A 50N06 MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VDSS VGSS RATINGS UNIT 60 V ±20 V TC = 25℃ 50 A Continuous Drain Current ID TC = 100℃ 35 A Drain Current Pulsed (Note 1) IDM 200 A Single Pulsed Avalanche Energy (Note 2) EAS 480 mJ Repetitive Avalanche Energy (Note 1) EAR 13 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 7 V/ns Total Power Dissipation (TC = 25℃) 130 W PD 0.9 W/℃ Derating Factor above 25℃ Operation Junction Temperature TJ -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Drain-Source Voltage Gate to Source Voltage THERMAL DATA PARAMETER Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient SYMBOL θJC θCS θJA MIN TYP MAX 1.15 UNIT °C/W °C/W °C/W 0.5 62.5 ELECTRICAL CHARACTERISTICS TC = 25℃ unless otherwise specified PARAMETER Off Characteristics Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Gate-Source Leakage Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-State Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Dynamic Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Miller Charge) SYMBOL TEST CONDITIONS BVDSS VGS = 0 V, ID = 250 µA ID = 250 µA, △BVDSS/△TJ Referenced to 25℃ VDS = 60 V, VGS = 0 V IDSS VDS = 48 V, TC = 125℃ VGS = 20V, VDS = 0 V IGSS VGS = -20V, VDS = 0 V TYP MAX 60 UNIT V 0.07 V/℃ 100 -100 µA µA nA nA 4.0 V 1 VGS(TH) VDS = VGS, ID = 250 µA RDS(ON) VGS = 10 V, ID = 25 A 18 23 mΩ CISS COSS CRSS VGS = 0 V, VDS = 25 V f = 1MHz 900 430 80 1220 550 100 pF pF pF 40 100 90 80 30 9.6 10 60 200 180 160 40 ns ns ns ns nC nC nC tD(ON) tR tD(OFF) tF QG QGS QGD VDD = 30V, ID =25 A, RG = 50Ω (Note 4, 5) VDS = 48V, VGS = 10 V ID = 50A, (Note 4, 5) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 2.0 2 of 8 QW-R502-088,A 50N06 MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS Source-Drain Diode Ratings and Characteristics Diode Forward Voltage VSD IS = 50A, VGS = 0 V Continuous Source Current IS MIN TYP Integral Reverse p-n Junction Diode in the MAX UNIT 1.5 V 50 MOSFET D A Pulsed Source Current ISM 200 G S Reverse Recovery Time tRR IS = 50A, VGS = 0 V dIF / dt = 100 A/µs Reverse Recovery Charge QRR Note 1. Repeativity rating: pulse width limited by junction temperature 2. L=5.6mH, IAS=50A, VDD=25V, RG=0Ω, Starting TJ=25℃ 3. ISD≤50A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2% 5. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 54 81 ns µC 3 of 8 QW-R502-088,A 50N06 MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. VGS VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) P.W. Period D= P. W. Period VGS= 10V I FM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-088,A 50N06 MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG VGS D.U.T. 10V 10% t D(ON ) Pulse Width ≤ 1μs tD (OFF) tF tR Duty Factor ≤0.1% Fig. 2A Switching Test Circuit Same Type as D.U.T. 50kΩ 12V 0.2μF Fig. 2B Switching Waveforms QG 10V 0.3μF VDS QGS QGD VGS DUT VG 1mA Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS RG 10V VDD D.U.T. tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw IAS tp Time Fig. 4B Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-088,A 50N06 MOSFET TYPICAL CHARACTERISTICS Transfer Characteristics 10-1 101 10 0 Drain-Source Voltage, VDS (V) ℃ 1 50 Note: 1. VDS=50V 2. 250µs Pulse Test 100 2.0 1.5 1.0 VGS=10V V GS=20V 0.5 0.0 0 20 40 60 80 100 120 140160180 200 3000 2500 2000 Capacitance Characteristics (Non-Repetitive) CISS=CGS +CGD (C DS=shorted) COSS =C DS+C GD CRSS =CGD C ISS 1500 1000 500 0 COSS *Note: 1. VGS=0V 2. f = 1MHz CRSS 4 5 6 7 8 9 10 3 Gate-Source Voltage, VGS (V) 2 On State Current vs. Allowable Case Temperature On-Resistance Variation vs. Drain Current and Gate Voltage 2.5 Drain Current, I D (A) Capacitance (pF) 10 1 Reverse Drain Current, ISD (A) Drain-Source On-Resistance, RDS(ON) (mΩ) 100 4.5V 25 ℃ 101 Drain Current, ID (A) 102 102 150℃ 10 1 *Note: 1. VGS=0V 2. 250µs Test UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1.6 Gate Charge Characteristics 12 10 VDS=30V 8 6 VDS=48V 4 2 0 15 20 25 30 35 10 5 Drain-Source Voltage, VDC (V) 25℃ 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Source-Drain Voltage, VSD (V) Gate-to-Source Voltage, VGS (V) Drain Current, ID (A) On-State Characteristics V GS Top: 15V 2 10 V 10 8 V 7 V 6 V 5 .5V 5V Bottorm : 4.5V 0 *Note: ID=50A 5 10 15 20 25 30 35 40 45 Total Gate Charge, QG (nC) 6 of 8 QW-R502-088,A 50N06 MOSFET Breakdown Voltage Variation vs. Junction Temperature 1.2 1.1 1.0 *Note: 1. VGS=0V 2. ID=250µA 0.9 0.8 -100 -50 0 50 150 200 100 Drain-Source On-Resistance, RDS(ON), (Normalized) Drain-Source Breakdown Voltage, BVDSS(Normalized) TYPICAL CHARACTERISTICS(Cont.) 3.0 2.5 2.0 1.5 1.0 0.0 50 100µs 1ms 10ms 10 10ms *Note: 0 10 1. T =25℃ c 2. T J=150℃ -1 3. Single Pulse 10 1 0 1 2 10 10 10 10 Drain-Source Voltage, VDS (V) Drain Current, ID (A) Drain Current , ID,(A) 10 Operation in This Area by RDS (on) 1 -50 0 50 100 150 Junction Temperature, T J (℃) Maximum Drain Current vs. Case Temperature Maximum Safe Operating 3 2 *Note: 1. VGS=10V 2. I D=25A 0.5 Junction Temperature, T J (℃) 10 On-Resistance Variation vs. Junction Temperature 40 30 20 10 0 25 50 75 100 125 150 Case Temperature, T C (℃) Thermal Response, ZθJC (t) Transient Thermal Response Curve 100 D=0.5 0.2 0.1 0.05 10-1 0.02 0.01 Single pulse *Note: 1. ZθJ C (t ) = 1.42℃/W Max. 2. Duty Factor , D=t1/ t2 3. TJ -TC =PDM×ZθJ C (t) -2 10 -5 0 101 10 10 -4 10-3 10-2 10-1 10 Square Wave Pulse Duration, t1 (sec) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-088,A 50N06 MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. 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