JANSR2N7400 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 200V, rDS(ON) = 0.440Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. • Photo Current - 3.0nA Per-RAD(Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 Ordering Information PART NUMBER JANSR2N7400 Die Family TA17637. PACKAGE TO-257AA The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available. BRAND JANSR2N7400 Also available at other radiation and screening levels. See us on the web, Intersil’s home page: http://www.intersil.com. Contact your local Intersil Sales Office for additional information. Symbol MIL-PRF-19500/632. Package TO-257AA S D G CAUTION: Beryllia Warning per MIL-S-19500 refer to package specifications. CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 2-58 File Number 4373.1 JANSR2N7400 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . IAS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . JANSR2N7400 200 200 UNITS V V 8 5 24 ±20 A A A V 50 20 0.40 24 8 24 -55 to 150 300 W W W/oC A A A oC oC 4.4 g CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On-State Voltage Drain to Source On Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Not on Slash Sheet) SYMBOL BVDSS VGS(TH) IDSS IGSS VDS(ON) TEST CONDITIONS ID = 1mA, VGS = 0V MIN TYP MAX UNITS 200 - - V TC = -55oC - - 5.0 V TC = 25oC 1.5 - 4.0 V TC = 125oC 0.5 - - V VDS = 160V, VGS = 0V TC = 25oC - - 25 µA TC = 125oC - - 250 µA VGS = ±20V TC = 25oC - - 100 nA TC = 125oC - - 200 nA VGS = VDS, ID = 1mA VGS = 12V, ID = 8A - - 3.70 V TC = 25oC - 0.320 0.440 Ω TC = 125oC - - 0.744 Ω - - 65 ns - - 160 ns td(OFF) - - 120 ns tf - - 90 ns - - 64 nC - 33 42 nC - - 3.1 nC nC rDS(ON)12 ID = 5A, VGS = 12V td(ON) tr Qg(TOT) VDD = 100V, ID = 8A, RL = 12.5Ω, VGS = 12V, RGS = 7.5Ω Gate Charge at 12V Qg(12) VGS = 0V to 20V VDD = 100V, ID = 8A, VGS = 0V to 12V Threshold Gate Charge (Not on Slash Sheet) Qg(TH) VGS = 0V to 2V Gate Charge Source Qgs - 7.8 12 Gate Charge Drain Qgd - 17 22 nC Thermal Resistance Junction to Case RθJC - - 2.5 oC/W Thermal Resistance Junction to Ambient RθJA - - 60 oC/W 2-59 JANSR2N7400 Source to Drain Diode Specifications PARAMETER SYMBOL Forward Voltage VSD Reverse Recovery Time TEST CONDITIONS trr TYP MAX UNITS 0.6 - 1.8 V - - 340 ns ISD = 8A, dISD/dt = 100A/µs Electrical Specifications up to 100K RAD PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL Drain to Source Breakdown Volts MIN ISD = 8A MIN MAX UNITS (Note 3) BVDSS VGS = 0, ID = 1mA TEST CONDITIONS 200 - V VGS(TH) VGS = VDS, ID = 1mA 1.5 4.0 V IGSS VGS = ±20V, VDS = 0V - 100 nA IDSS Gate to Source Threshold Volts (Note 3) Gate to Body Leakage (Notes 2, 3) Zero Gate Leakage (Note 3) VGS = 0, VDS = 160V - 25 µA Drain to Source On-State Volts (Notes 1, 3) VDS(ON) VGS = 12V, ID = 8A - 3.70 V Drain to Source On Resistance (Notes 1, 3) rDS(ON)12 VGS = 12V, ID = 5A - 0.440 Ω NOTES: 1. Pulse test, 300µs Max. 2. Absolute value. 3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS . Single Event Effects (SEB, SEGR) (Note 4) ENVIRONMENT (NOTE 5) TEST SYMBOL Single Event Effects Safe Operating Area SEESOA ION SPECIES TYPICAL LET (MeV/mg/cm) TYPICAL RANGE (µ) APPLIED VGS BIAS (V) (NOTE 6) MAXIMUM VDS BIAS (V) Ni 26 43 -20 200 Br 37 36 -5 200 Br 37 36 -10 160 Br 37 36 -15 100 Br 37 36 -20 40 NOTES: 4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). Typical Performance Curves Unless Otherwise Specified LET = 26MeV/mg/cm2, RANGE = 43µ LET = 37MeV/mg/cm2, RANGE = 36µ 240 FLUENCE = 1E5 IONS/cm2 (TYPICAL) 1E-3 LIMITING INDUCTANCE (HENRY) 200 VDS (V) 160 120 80 40 1E-4 ILM = 10A 30A 1E-5 100A 300A 1E-6 TEMP = 25oC 0 0 -5 -10 -15 VGS (V) -20 1E-7 10 -25 30 100 300 DRAIN SUPPLY (V) FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA 2-60 FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO IAS 1000 JANSR2N7400 Typical Performance Curves Unless Otherwise Specified (Continued) 10 50 TC = 25oC ID , DRAIN CURRENT (A) ID , DRAIN (A) 8 6 4 2 10 100µs 1ms 1 10ms OPERATION IN THIS AREA MAY BE 100ms LIMITED BY rDS(ON) 0 -50 0 50 0.1 150 100 TC , CASE TEMPERATURE (oC) FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE 1 600 10 100 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 2.5 PULSE DURATION = 250ms, VGS = 12V, ID = 5A NORMALIZED rDS(ON) 2.0 QG 12V QGS QGD VG 1.5 1.0 0.5 0.0 -80 -40 0 CHARGE FIGURE 5. BASIC GATE CHARGE WAVEFORM NORMALIZED THERMAL RESPONSE (ZθJC) 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE 10 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE PDM 0.01 0.001 10-5 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE 2-61 t1 100 t2 101 JANSR2N7400 Typical Performance Curves Unless Otherwise Specified (Continued) IAS , AVALANCHE CURRENT (A) 50 STARTING TJ = 25oC 10 STARTING TJ = 150oC IF R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) IF R ≠ 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 1 0.01 0.1 1 tAV , TIME IN AVALANCHE (ms) 10 FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING Test Circuits and Waveforms VDS L BVDSS VARY tP TO OBTAIN REQUIRED PEAK IAS + RG tP VDD VDS IAS - VGS VDD DUT tP 0V IAS 0.01Ω tAV FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 10. UNCLAMPED ENERGY WAVEFORMS tON VDD tOFF td(ON) td(OFF) tr RL VDS tf 90% 90% VDS VGS = 12V 10% DUT 10% 0V 90% RGS 50% VGS 50% PULSE WIDTH 10% FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 2-62 JANSR2N7400 Screening Information Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table). Delta Tests and Limits (JANS) TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MAX UNITS Gate to Source Leakage Current IGSS VGS = ±20V ±20 (Note 7) nA Zero Gate Voltage Drain Current IDSS VDS = 80% Rated Value Drain to Source On Resistance rDS(ON) TC = 25oC at Rated ID Gate Threshold Voltage VGS(TH) ID = 1.0mA ±25 (Note 7) µA ±20% (Note 8) Ω ±20% (Note 8) V NOTES: 7. Or 100% of Initial Reading (whichever is greater). 8. Of Initial Reading. Screening Information TEST JANS Gate Stress VGS = 30V, t = 250µs Pind Required Pre Burn-In Tests (Note 9) MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) Steady State Gate Bias (Gate Stress) MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours Interim Electrical Tests (Note 9) All Delta Parameters Listed in the Delta Tests and Limits Table Steady State Reverse Bias (Drain Stress) MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours PDA 5% Final Electrical Tests (Note 9) MIL-S-19500, Group A, Subgroups 2 and 3 NOTE: 9. Test limits are identical pre and post burn-in. Additional Screening Tests PARAMETER Safe Operating Area Unclamped Inductive Switching SYMBOL SOA TEST CONDITIONS VDS = 160V, t = 10ms MAX UNITS 0.65 A IAS VGS(PEAK) = 15V, L = 0.1mH 24 A Thermal Response ∆VSD tH = 10ms; VH = 25V; IH = 1A 90 mV Thermal Impedance ∆VSD tH = 500ms; VH = 25V; IH = 1A 125 mV 2-63 JANSR2N7400 Rad Hard Data Packages - Intersil Power Transistors 1. JANS Rad Hard - Standard Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning Attributes Data Sheet Hi-Rel Lot Traveler HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data F. Group A - Attributes Data Sheet G. Group B - Attributes Data Sheet H. Group C - Attributes Data Sheet I. Group D - Attributes Data Sheet 2. JANS Rad Hard - Optional Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups A2, A3, A4, A5 and A7 Data G. Group B - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data I. Group D - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data 2-64 JANSR2N7400 TO-257AA 3 LEAD JEDEC TO-257AA HERMETIC METAL PACKAGE A INCHES ØP E A1 SYMBOL Q H1 D 0.065 R TYP. L1 Øb1 L b 1 2 3 J1 e e1 MIN MAX MILLIMETERS MIN MAX NOTES A 0.190 0.200 4.83 5.08 - A1 0.035 0.045 0.89 1.14 - Øb 0.025 0.035 0.64 0.88 2, 3 Øb1 0.060 0.090 1.53 2.28 - D 0.645 0.665 16.39 16.89 - E 0.410 0.420 10.42 10.66 - e 0.100 TYP 2.54 TYP 4 e1 0.200 BSC 5.08 BSC 4 H1 0.230 0.250 5.85 6.35 - J1 0.110 0.130 2.80 3.30 4 15.24 L 0.600 0.650 16.51 - L1 - 0.035 - 0.88 - ØP 0.140 0.150 3.56 3.81 - Q 0.113 0.133 2.88 3.37 - NOTES: 1. These dimensions are within allowable dimensions of Rev. B of JEDEC TO-257AA dated 9-88. 2. Add typically 0.002 inches (0.05mm) for solder coating. 3. Lead dimension (without solder). 4. Position of lead to be measured 0.150 inches (3.81mm) from bottom of dimension D. 5. Die to base BeO isolated, terminals to case ceramic isolated. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93. WARNING! BERYLLIA WARNING PER MIL-S-19500 Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical operation which will produce dust containing any beryllium compound. Packages containing any beryllium compound shall not be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its’ compounds. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 2-65 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029