Transistor 2SB766, 2SB766A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD874 and 2SD874A Unit: mm ■ Features Parameter Symbol Collector to 2SB766 base voltage 2SB766A Ratings VCBO Emitter to base voltage VEBO Peak collector current –5 V ICP –1.5 A Collector current IC –1 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.25 0.4max. 4.0–0.20 3.0±0.15 2 1 marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : or more, and the board A(2SB766) B(2SB766A) (Ta=25˚C) Parameter Symbol Collector cutoff current 0.4±0.04 V –50 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion 0.5±0.08 1.5±0.1 3 –25 1cm2 45° 0.4±0.08 V –60 VCEO emitter voltage 2SB766A Unit –30 2SB766 Collector to * (Ta=25˚C) +0.1 ■ Absolute Maximum Ratings 1.5±0.1 4.5±0.1 1.6±0.2 2.5±0.1 Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.0–0.2 ● 2.6±0.1 ● Conditions min typ max Unit – 0.1 µA ICBO VCB = –20V, IE = 0 VCBO IC = –10µA, IE = 0 VCEO IC = –2mA, IB = 0 VEBO IE = –10µA, IC = 0 –5 hFE1*1 VCE = –10V, IC = –500mA*2 85 hFE2 VCE = –5V, IC = –1A*2 50 VCE(sat) IC = –500mA, IB = –50mA*2 – 0.2 – 0.4 Base to emitter saturation voltage VBE(sat) IC = –500mA, IB = –50mA*2 – 0.85 –1.2 Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 200 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 20 Collector to base 2SB766 voltage 2SB766A Collector to emitter 2SB766 voltage 2SB766A Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage *1h –30 V –60 –25 V –50 V 340 Rank classification Marking Symbol Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 2SB766 AQ AR AS 2SB766A BQ BR BS V MHz 30 *2 FE1 V pF Pulse measurement 1 2SB766, 2SB766A Transistor PC — Ta IC — VCE 1.0 0.8 –100 Ta=25˚C –1.25 IB=–10mA –9mA –8mA –1.00 –7mA –6mA –5mA – 0.75 0.6 –4mA –3mA – 0.50 0.4 –2mA – 0.25 0.2 0 –1mA 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –2 –10 –3 Ta=–25˚C –1 75˚C – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Ta=75˚C 300 25˚C 200 –25˚C 100 –3 –10 IE=0 f=1MHz Ta=25˚C Single pulse Ta=25˚C –3 ICP –1 IC t=10ms – 0.3 25 t=1s – 0.1 20 – 0.03 15 2SB766 – 0.003 –30 –100 Collector to base voltage VCB (V) – 0.001 – 0.01 – 0.03 – 0.1 – 0.3 –1 2SB766A – 0.01 10 5 VCB=–10V Ta=25˚C 160 140 120 100 80 60 40 –3 1 3 10 30 Emitter current IE (mA) Area of safe operation (ASO) –10 30 –10 0 –1 Collector current IC (A) 35 –3 20 0 – 0.01 – 0.03 – 0.1 – 0.3 –10 40 –1 Collector current IC (A) fT — I E 400 Collector current IC (A) Collector output capacitance Cob (pF) – 0.03 –10 500 Cob — VCB 2 25˚C –25˚C 180 50 –10 Ta=75˚C 200 Collector current IC (A) –3 –1 VCE=–10V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) –30 0 –1 –3 – 0.1 600 IC/IB=10 45 –8 –10 hFE — IC –100 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –6 –30 Collector to emitter voltage VCE (V) VBE(sat) — IC 25˚C –4 IC/IB=10 – 0.3 Transition frequency fT (MHz) 0 Collector to emitter saturation voltage VCE(sat) (V) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.2 VCE(sat) — IC –1.50 Collector current IC (A) Collector power dissipation PC (W) 1.4 –10 Collector to emitter voltage VCE (V) 100