Transistor 2SB1589 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.0–0.2 ● 2.6±0.1 ● 1.5±0.1 4.5±0.1 1.6±0.2 2.5±0.1 ■ Features 0.5±0.08 1.5±0.1 0.4±0.04 3.0±0.15 ■ Absolute Maximum Ratings * (Ta=25˚C) 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO –10 V Collector to emitter voltage VCEO –10 V Emitter to base voltage VEBO –7 V Peak collector current ICP –2 A Collector current IC –1.5 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 2 1 marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : 1U Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion ■ Electrical Characteristics Parameter (Ta=25˚C) Symbol Conditions min typ max Unit –1 µA Collector cutoff current ICBO VCB = –7V, IE = 0 Collector to base voltage VCBO IC = –10µA, IE = 0 –10 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –10 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 V –400mA*2 Forward current transfer ratio hFE VCE = –1V, IC = Collector to emitter saturation voltage VCE(sat) IC = –1A, IB = –25mA*2 Transition frequency fT VCB = –6V, IE = 50mA, f = 200MHz 190 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 65 pF Forward voltage *1 Applicable to the built-in diode. VF *1 200 700 – 0.24 IF = –500mA – 0.35 –1.3 *2 V V Pulse measurement 1 Transistor 2SB1589 PC — Ta IC — VCE 1.0 0.8 0.6 0.4 0.2 –2.5 –2.0 –2.0 –1.5 IB=–3.0mA –1.0 –2.5mA –2.0mA –1.5mA –1.0mA – 0.5mA 60 80 100 120 140 160 –1 Ta=75˚C 25˚C –25˚C – 0.03 – 0.01 – 0.003 –1 –3 –10 Collector current IC (A) IE=0 f=1MHz Ta=25˚C 100 80 60 40 20 0 1 3 10 –8 –10 –12 0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 30 600 500 Ta=75˚C 400 25˚C –25˚C 200 100 0 – 0.01 – 0.03 – 0.1 – 0.3 100 Collector to base voltage VCB (V) –1.2 Base to emitter voltage VBE (V) VCB=–6V f=200MHz Ta=25˚C VCE=–1V 300 –25˚C fT — I E 500 400 300 200 100 0 –1 –3 Collector current IC (A) Cob — VCB 120 –6 600 Forward current transfer ratio hFE –3 – 0.001 – 0.01 – 0.03 – 0.1 –0.3 –4 Collector to emitter voltage VCE (V) IC/IB=40 – 0.1 –2 hFE — IC –10 – 0.3 Ta=75˚C –1.2 0 0 VCE(sat) — IC 25˚C – 0.4 Transition frequency fT (MHz) 40 –1.6 – 0.8 0 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) VCE=–1V Ta=25˚C – 0.5 0 Collector output capacitance Cob (pF) –2.4 Collector current IC (A) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 IC — VBE –3.0 Collector current IC (A) Collector power dissipation PC (W) 1.2 –10 1 3 10 30 Emitter current IE (mA) 100