Switching Diodes MA2C178, MA2C179 Silicon epitaxial planar type Unit : mm For high-speed switching circuits φ 0.45 max. COLORED BAND INDICATES CATHODE 2.2 ± 0.3 1st Band 2nd Band 13 min. • Large forward current IFRM • High switching speed • Small terminal capacitance, Ct 1 0.2 max. ■ Features Symbol Reverse voltage (DC) MA2C178 Repetitive peak reverse voltage MA2C178 Rating Unit 40 V VR MA2C179 2 80 VRRM 40 MA2C179 13 min. Parameter 0.2 max. ■ Absolute Maximum Ratings Ta = 25°C φ 1.75 max. V 80 Average forward current IF(AV) 200 mA Repetitive peak forward current IFRM 600 mA Non-repetitive peak forward surge current* IFSM 1 A Junction temperature Tj 200 °C Storage temperature Tstg −55 to +200 °C 1 : Cathode 2 : Anode JEDEC : DO-34 Note) * : t = 1 s ■ Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Symbol MA2C178 Conditions Min Typ Max Unit IR1 VR = 15 V 50 nA IR2 VR = 35 V 500 nA VR = 75 V 500 VR = 35 V, Ta = 150°C 100 VR = 75 V, Ta = 150°C 100 MA2C179 MA2C178 MA2C179 MA2C178 IR MA2C179 µA Forward voltage (DC) VF IF = 200 mA 1.1 V Terminal capacitance Ct VR = 0 V, f = 1 MHz 4 pF Reverse recovery time* trr IF = 10 mA, VR = 1 V Irr = 0.1 · IR, RL = 100 Ω 20 ns Note) 1. Rated input/output frequency: 50 MHz 2. * : trr measuring circuit ■ Cathode Indication Type No. Color MA2C178 MA2C179 1st Band Violet Violet 2nd Band White Green 1 MA2C178, MA2C179 Switching Diodes Common characteristics charts IF V F 103 Input Pulse tp tr Output Pulse 102 t 10% A Pulse Generator (PG-10N) Rs = 50 Ω IF 90% VR t Irr = 0.1 · IR IF = 10 mA VR = 1 V RL = 100 Ω tp = 2 µs tr = 0.35 ns δ = 0.05 W.F.Analyzer (SAS-8130) Ri = 50 Ω trr Forward current IF (mA) Bias Application Unit N-50BU trrmeasuring circuit 10 Ta = 150°C 1 100°C 25°C − 20°C 10−1 10−2 0 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage VF (V) Characteristics charts of MA2C178 IR T a VF Ta IR V R 102 102 1.2 Ta = 150°C 1 10−1 10−2 100°C 1 10−1 25°C 10−2 0 40 80 120 Ambient temperature Ta 160 Forward voltage VF (V) 15 V 10−3 1.0 10 VR = 35 V Reverse current IR (µA) Reverse current IR (µA) 10 10−3 IF = 200 mA 0.8 0.6 10 mA 0.4 3 mA 0.2 0 (°C) 10 20 30 Reverse voltage VR 40 0 −40 50 (V) 0 40 80 120 160 Ambient temperature Ta (°C) Characteristics charts of MA2C179 IR T a 102 10 VR = 75 V f = 1 MHz Ta = 25°C Ta = 150°C 5 15 V Reverse current IR (µA) 10 1 10−1 10−2 Terminal capacitance Ct (pF) 10 Reverse current IR (µA) Ct VR IR V R 102 100°C 1 10−1 25°C 10−2 3 2 1 0.5 0.3 0.2 10−3 0 40 80 120 160 Ambient temperature Ta (°C) 2 10−3 0 10 20 30 40 Reverse voltage VR (V) 50 0.1 0 10 20 30 40 Reverse voltage VR (V) 50