Schottky Barrier Diodes (SBD) MA2C774 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification φ 0.45 max. COLORED BAND INDICATES CATHODE ■ Absolute Maximum Ratings Ta = 25°C Repetitive peak reverse voltage 2 Symbol Rating Unit VR 30 V VRRM 30 V Reverse voltage (DC) Peak forward current 13 min. 0.2 max. 2.2 ± 0.3 • Sealed in small glass package (DO-34) • Allowing to insert to a 5 mm pitch hole • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency Parameter 13 min. 1 0.2 max. ■ Features IFM 300 mA Average forward current IF(AV) 100 mA Non-repetitive peak forward surge current* IFSM 2 A Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C φ 1.75 max. 1 : Cathode 2 : Anode JEDEC : DO-34 Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit 15 µA Reverse current (DC) IR VR = 30 V Forward voltage (DC) VF IF = 100 mA Terminal capacitance Ct VR = 0 V, f = 1 MHz 30 pF Reverse recovery time* trr IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 1.5 ns 0.55 V Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 1 000 MHz ■ Cathode Indication 3. * : trr measuring circuit Type No. MA2C774 Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse Color 1st Band Light Green t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA2C774 Schottky Barrier Diodes (SBD) IF V F 104 0.8 103 10 1 10−1 0.6 IF = 100 mA 0.4 Reverse current IR (µA) Forward voltage VF (V) Forward current IF (mA) − 20°C Ta = 150°C 1.0 Ta = 150°C 100°C 25°C 102 IR VR VF Ta 103 100°C 102 10 25°C 1 0.2 10 mA 3 mA 10−2 0 0.1 0.2 0.3 0.4 0.5 0 −40 0.6 Forward voltage VF (V) 10−1 0 40 80 120 Ct VR IR T a 103 Reverse current IR (µA) Terminal capacitance Ct (pF) VR = 30 V 20 16 12 8 10 V 5V 102 10 1 4 0 5 10 15 20 25 Reverse voltage VR (V) 30 10−1 −40 0 40 80 120 160 Ambient temperature Ta (°C) 0 5 10 15 20 25 Reverse voltage VR (V) 104 f = 1 MHz Ta = 25°C 2 200 Ambient temperature Ta (°C) 24 0 160 200 30