Datasheet

AON7400B
30V N-Channel MOSFET
General Description
Product Summary
VDS
• Latest Trench Power MOSFET technology
• Very Low RDS(ON) at 4.5V VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
30V
30A
ID (at VGS=10V)
Application
RDS(ON) (at VGS=10V)
< 7.5mΩ
RDS(ON) (at VGS=4.5V)
< 10.5mΩ
100% UIS Tested
100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
DFN 3x3 EP
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
Pin 1
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AON7400B
DFN 3x3 EP
Tape & Reel
5000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
Pulsed Drain Current
TA=25°C
VDS Spike
L=0.1mH
C
100ns
TC=25°C
Power Dissipation B
IDM
84
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: October 2013
18
27
A
EAS
36
mJ
VSPIKE
36
V
24
Steady-State
Steady-State
W
9.5
4.1
RθJA
RθJC
W
2.6
TJ, TSTG
Symbol
t ≤ 10s
A
IAS
PDSM
TA=70°C
A
14.5
PD
TC=100°C
TA=25°C
Power Dissipation A
V
30 G
23 G
IDSM
TA=70°C
Avalanche Current C
Avalanche energy
±20
ID
TC=100°C
C
Continuous Drain
Current
Units
V
40 I
TC=25°C
Continuous Drain
Current
Maximum
30
°C
-55 to 150
Typ
24
47
4.2
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Max
30
60
5.2
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
V
1
TJ=55°C
1.5
±100
nA
1.95
2.5
V
6.2
7.5
9.4
11.3
10.5
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=18A
8.4
gFS
Forward Transconductance
VDS=5V, ID=18A
60
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
µA
5
VGS=10V, ID=18A
Coss
Units
30
VDS=30V, VGS=0V
IDSS
Max
0.72
mΩ
mΩ
S
1
V
28
A
960
1200
1440
pF
125
180
235
pF
65
110
155
pF
1.4
Ω
0.4
0.9
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
10
18.5
26
nC
Qg(4.5V) Total Gate Charge
4
8.5
15
nC
1
3
8
nC
2
4
10
nC
VGS=10V, VDS=15V, ID=18A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=18A, dI/dt=500A/µs
6
10
14
Qrr
Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs
9
15.5
22
Body Diode Reverse Recovery Time
5.5
VGS=10V, VDS=15V, RL=0.83Ω,
RGEN=3Ω
ns
3.5
ns
21.5
ns
3.5
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
I. The maximum current rating is silicon limited.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: October 2013
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
5V
10V
VDS=5V
100
4.5V
80
6V
60
4V
ID(A)
ID (A)
80
60
40
40
125°C
3.5V
25°C
20
20
VGS=3V
0
0
1
2
3
0
4
0
5
0.5
1.5
2
2.5
3
3.5
4
4.5
5
5.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
12
Normalized On-Resistance
1.8
10
RDS(ON) (mΩ
Ω)
1
VGS=4.5V
8
6
VGS=10V
4
1.6
VGS=10V
ID=18A
1.4
1.2
VGS=4.5V
ID=18A
1
0.8
2
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
1.0E+02
ID=18A
1.0E+01
20
125°C
15
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
125°C
1.0E-01
25°C
1.0E-02
10
1.0E-03
5
25°C
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: October 2013
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1600
VDS=15V
ID=18A
1400
Ciss
8
Capacitance (pF)
VGS (Volts)
1200
6
4
1000
800
600
400
2
Coss
200
0
Crss
0
0
5
10
15
20
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
25
30
200
10µs
100.0
RDS(ON)
limited
160
100µs
DC
1ms
10ms
1.0
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
TJ(Max)=150°C
TC=25°C
10µs
Power (W)
ID (Amps)
15
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
10.0
10
120
80
40
0.1
1
10
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
0
0.0001 0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=5.2°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: October 2013
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
40
25
Power Dissipation (W)
30
Current rating ID(A)
20
15
10
20
10
5
0
0
0
25
50
75
100
125
150
0
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
TCASE (°
°C)
Figure 13: Current De-rating (Note F)
10000
TJ(Max)=150°C
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
Zθ JA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
Single Pulse
Ton
0.001
1E-05
T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: October 2013
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.1.0: October 2013
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6