AON7400B 30V N-Channel MOSFET General Description Product Summary VDS • Latest Trench Power MOSFET technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant 30V 30A ID (at VGS=10V) Application RDS(ON) (at VGS=10V) < 7.5mΩ RDS(ON) (at VGS=4.5V) < 10.5mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial DFN 3x3 EP Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G Pin 1 S Orderable Part Number Package Type Form Minimum Order Quantity AON7400B DFN 3x3 EP Tape & Reel 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS Pulsed Drain Current TA=25°C VDS Spike L=0.1mH C 100ns TC=25°C Power Dissipation B IDM 84 Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: October 2013 18 27 A EAS 36 mJ VSPIKE 36 V 24 Steady-State Steady-State W 9.5 4.1 RθJA RθJC W 2.6 TJ, TSTG Symbol t ≤ 10s A IAS PDSM TA=70°C A 14.5 PD TC=100°C TA=25°C Power Dissipation A V 30 G 23 G IDSM TA=70°C Avalanche Current C Avalanche energy ±20 ID TC=100°C C Continuous Drain Current Units V 40 I TC=25°C Continuous Drain Current Maximum 30 °C -55 to 150 Typ 24 47 4.2 www.aosmd.com Max 30 60 5.2 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA V 1 TJ=55°C 1.5 ±100 nA 1.95 2.5 V 6.2 7.5 9.4 11.3 10.5 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=18A 8.4 gFS Forward Transconductance VDS=5V, ID=18A 60 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz µA 5 VGS=10V, ID=18A Coss Units 30 VDS=30V, VGS=0V IDSS Max 0.72 mΩ mΩ S 1 V 28 A 960 1200 1440 pF 125 180 235 pF 65 110 155 pF 1.4 Ω 0.4 0.9 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 10 18.5 26 nC Qg(4.5V) Total Gate Charge 4 8.5 15 nC 1 3 8 nC 2 4 10 nC VGS=10V, VDS=15V, ID=18A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=18A, dI/dt=500A/µs 6 10 14 Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs 9 15.5 22 Body Diode Reverse Recovery Time 5.5 VGS=10V, VDS=15V, RL=0.83Ω, RGEN=3Ω ns 3.5 ns 21.5 ns 3.5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. I. The maximum current rating is silicon limited. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: October 2013 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 5V 10V VDS=5V 100 4.5V 80 6V 60 4V ID(A) ID (A) 80 60 40 40 125°C 3.5V 25°C 20 20 VGS=3V 0 0 1 2 3 0 4 0 5 0.5 1.5 2 2.5 3 3.5 4 4.5 5 5.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 12 Normalized On-Resistance 1.8 10 RDS(ON) (mΩ Ω) 1 VGS=4.5V 8 6 VGS=10V 4 1.6 VGS=10V ID=18A 1.4 1.2 VGS=4.5V ID=18A 1 0.8 2 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 1.0E+02 ID=18A 1.0E+01 20 125°C 15 IS (A) RDS(ON) (mΩ Ω) 1.0E+00 125°C 1.0E-01 25°C 1.0E-02 10 1.0E-03 5 25°C 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: October 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1600 VDS=15V ID=18A 1400 Ciss 8 Capacitance (pF) VGS (Volts) 1200 6 4 1000 800 600 400 2 Coss 200 0 Crss 0 0 5 10 15 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 20 25 30 200 10µs 100.0 RDS(ON) limited 160 100µs DC 1ms 10ms 1.0 TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 TJ(Max)=150°C TC=25°C 10µs Power (W) ID (Amps) 15 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 10.0 10 120 80 40 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=5.2°C/W 1 0.1 PD Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: October 2013 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 40 25 Power Dissipation (W) 30 Current rating ID(A) 20 15 10 20 10 5 0 0 0 25 50 75 100 125 150 0 TCASE (° °C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (° °C) Figure 13: Current De-rating (Note F) 10000 TJ(Max)=150°C TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Zθ JA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PD Single Pulse Ton 0.001 1E-05 T 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: October 2013 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1.0: October 2013 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6