AOSMD AOD2816

万和兴电子有限公司 www.whxpcb.com
AOD2816
80V N-Channel MOSFET
General Description
Product Summary
VDS
The AOD2816 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON), Ciss and Coss. This device is
ideal for boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
80V
35A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 15mΩ
RDS(ON) (at VGS=6V)
< 29mΩ
100% UIS Tested
100% Rg Tested
TO252
DPAK
Top View
D
Bottom View
D
D
S
G
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: November 2012
IAS
25
A
EAS
31
mJ
53.5
Steady-State
Steady-State
W
26.5
2.5
RθJA
RθJC
W
1.6
TJ, TSTG
Symbol
t ≤ 10s
A
7
PDSM
Junction and Storage Temperature Range
A
8.5
PD
TA=25°C
V
100
IDSM
TA=70°C
±20
27
IDM
TA=25°C
Continuous Drain
Current
Units
V
35
ID
TC=100°C
Maximum
80
-55 to 175
Typ
16
41
2.2
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°C
Max
20
50
2.8
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOD2816
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS，ID=250µA
2.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
100
±100
nA
3
3.5
V
12
15
21
26
VGS=6V, ID=20A
18
29
mΩ
34
1
V
35
A
VGS=10V, ID=20A
Static Drain-Source On-Resistance
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=40V, f=1MHz
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=10V, VDS=40V, ID=20A
0.4
mΩ
S
1109
pF
154
pF
9
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Qg(4.5V)
A
0.74
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
µA
5
Gate-Body leakage current
Units
V
1
IGSS
Coss
Max
80
VDS=80V, VGS=0V
VGS(th)
RDS(ON)
Typ
pF
0.95
1.5
Ω
14.5
22
nC
5
10
nC
4.5
nC
3.2
nC
8
ns
VGS=10V, VDS=40V, RL=2Ω,
RGEN=3Ω
4
ns
17
ns
3
ns
IF=20A, dI/dt=500A/µs
30
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
122
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: November 2012
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Page 2 of 6
AOD2816
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
8V
VDS=5V
7V
80
80
6V
60
ID(A)
ID (A)
60
40
40
5V
20
20
VGS=4.5V
125°C
25°C
0
0
0
1
2
3
4
0
5
20
4
6
8
10
Normalized On-Resistance
2.4
18
RDS(ON) (mΩ
Ω)
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=6V
16
14
12
VGS=10V
10
2.2
2
VGS=10V
ID=20A
1.8
1.6
1.4
VGS=6V
ID=20A
1.2
1
17
5
2
10
0.8
8
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
1.0E+02
40
ID=20A
1.0E+01
40
30
1.0E+00
IS (A)
RDS(ON) (mΩ
Ω)
125°C
20
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
10
25°C
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: November 2012
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOD2816
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1500
VDS=40V
Ciss
1200
Capacitance (pF)
VGS (Volts)
8
6
4
2
900
600
Coss
300
Crss
0
0
0
5
10
15
20
0
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
40
50
60
70
80
VDS (Volts)
Figure 8: Capacitance Characteristics
200
1000.0
10µs
100.0
100µs
1.0
1ms
10ms
DC
Power (W)
10.0
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
TJ(Max)=175°C
TC=25°C
160
10µs
RDS(ON)
ID (Amps)
20
0.1
1
17
5
2
10
120
80
40
10
100
1000
VDS (Volts)
0
0.0001
0.001
0.01
0.1
01
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
VGS> or equal to 6V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
40
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=2.8°C/W
PD
0.1
Ton
Single Pulse
0.01
1E-05
0.0001
T
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: November 2012
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Page 4 of 6
AOD2816
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
TA=100°C
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
100
TA=150°C
TA=125°C
10
50
40
30
20
10
1
0
1
10
100
0
25
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
40
Power (W)
Current rating ID(A)
TA=25°C
1000
30
20
17
5
2
10
100
10
10
1
1E-05
0
0
25
50
75
100
125
150
0.001
0.1
175
10
1000
0
18
TCASE (°C)
Figure 14: Current De-rating (Note F)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=50°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: November 2012
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Page 5 of 6
AOD2816
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Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev.1.0: November 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6