AON7406 30V N-Channel MOSFET General Description The AON7406 uses advanced trench technology and design to provide excellent RDS(ON)with low gate charge. This device is suitable for use in SMPS and general purpose applications. Features VDS 30V ID (at VGS=10V) 25A RDS(ON) (at VGS=10V) < 17mΩ RDS(ON) (at VGS=4.5V) < 23mΩ Typical ESD protection HBM Class 2 D Top View S S S G D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current C A 9 A 7 Avalanche Current C IAS, IAR 19 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 18 mJ Power Dissipation B TC=100°C Junction and Storage Temperature Range 3.1 Steady-State Steady-State RθJA RθJC W 2 TJ, TSTG Symbol t ≤ 10s W 6.7 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 16.7 PD TA=25°C Power Dissipation A 1/6 V 50 IDSM TA=70°C ±20 15 IDM TA=25°C Continuous Drain Current Units V 25 ID TC=100°C Maximum 30 -55 to 150 Typ 30 60 6.2 °C Max 40 75 7.5 Units °C/W °C/W °C/W www.freescale.net.cn AON7406 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V Typ 30 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±16V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 50 TJ=55°C 5 VGS=10V, ID=9A µA 1.8 2.4 V 14 17 20 24 23 mΩ 1 V 15 A 888 pF A Static Drain-Source On-Resistance VGS=4.5V, ID=8A 18 gFS Forward Transconductance VDS=5V, ID=9A 40 VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz µA 10 RDS(ON) TJ=125°C Units V VDS=30V, VGS=0V IDSS Crss Max mΩ S 600 740 77 110 145 pF 50 82 115 pF 0.5 1.1 1.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12 15 18 nC Qg(4.5V) Total Gate Charge 6 7.5 9 nC Qgs Gate Source Charge VGS=10V, VDS=15V, ID=9A 2.5 nC Qgd Gate Drain Charge 3 nC tD(on) Turn-On DelayTime 5 ns tr Turn-On Rise Time 3.5 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=9A, dI/dt=500A/µs 6 8 10 Qrr Body Diode Reverse Recovery Charge IF=9A, dI/dt=500A/µs 14 18 22 VGS=10V, VDS=15V, RL=1.67Ω, RGEN=3Ω 19 ns 3.5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AON7406 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 10V 4V 25 5V 20 3V ID(A) ID (A) 20 VDS=5V 25 15 15 10 10 5 125°C 5 VGS=2.5V 25°C 0 0 0 1 2 3 4 1 5 1.5 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 30 Normalized On-Resistance 1.8 25 RDS(ON) (mΩ ) 2 VGS=4.5V 20 15 10 VGS=10V 5 1.6 VGS=10V ID=9A 1.4 1.2 VGS=4.5V ID=8A 1 17 5 2 10 0.8 0 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 40 1.0E+02 ID=9A 1.0E+01 35 40 1.0E+00 IS (A) RDS(ON) (mΩ ) 30 125°C 25 1.0E-02 25°C 20 1.0E-03 15 1.0E-04 25°C 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 125°C 1.0E-01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON7406 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=15V ID=9A 1000 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 800 600 400 Coss 200 0 Crss 0 0 3 6 9 12 Qg (nC) Figure 7: Gate-Charge Characteristics 0 15 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 200 1000.0 10µs 100.0 160 TJ(Max)=150°C TC=25°C RDS(ON) limited 10.0 100µs DC 1ms 10ms 1.0 TJ(Max)=150°C TC=25°C 0.1 Power (W) 10µs ID (Amps) 30 17 5 2 10 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=7.5°C/W 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AON7406 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 TA=25°C TA=100°C Power Dissipation (W) IAR (A) Peak Avalanche Current 100 TA=150°C 10 TA=125°C 1 12 8 4 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 10000 20 1000 25 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 150 TA=25°C Power (W) Current rating ID(A) 16 15 10 17 5 2 10 100 10 5 1 0.00001 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) 0.001 0.1 10 1000 0 18 150 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 40 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AON7406 30V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn