AON7242 40V N-Channel MOSFET General Description Product Summary The AON7242 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. VDS 40V 50A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 3.9mΩ RDS(ON) (at VGS =4.5V) < 5.8mΩ 100% UIS Tested 100% Rg Tested Top View DFN 3.3x3.3 EP Bottom View D Top View 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current V A 255 30 IDSM TA=70°C ±20 39 IDM TA=25°C Units V 50 ID TC=100°C C Maximum 40 A 25 Avalanche Current C IAS, IAR 48 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 115 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 0: July 2011 6.2 Steady-State Steady-State RθJA RθJC www.aosmd.com W 4 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 PD TC=100°C -55 to 150 Typ 16 45 1.1 °C Max 20 55 1.5 Units °C/W °C/W °C/W Page 1 of 6 AON7242 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 255 VGS=10V, ID=20A TJ=125°C VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance V 3.2 3.9 A 4.9 80 VDS=5V, ID=20A Output Capacitance nA 2.3 4.5 Forward Transconductance Coss 100 1.8 VGS=4.5V, ID=20A gFS µA 5 IGSS Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 40 VDS=40V, VGS=0V VGS(th) RDS(ON) Typ 0.69 6.0 mΩ 5.8 mΩ 1 V 50 A S 1575 1970 2365 pF VGS=0V, VDS=20V, f=1MHz 375 540 705 pF 12 41 70 pF VGS=0V, VDS=0V, f=1MHz 0.4 0.8 1.2 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 21 26.5 32 nC Qg(4.5V) Total Gate Charge 9 11.9 15 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=20V, ID=20A 6.2 nC 2.2 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 12 16 20 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 36 47 58 VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω 7 ns 16 ns 23 ns 3 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: July 2011 www.aosmd.com Page 2 of 6 AON7242 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 10V VDS=5V 4V 100 80 4.5V 3.5V 60 ID(A) ID (A) 80 60 40 125°C 40 VGS=3V 20 20 25°C 0 0 0 1 2 3 4 0 5 6 2 3 4 5 6 Normalized On-Resistance 1.8 VGS=4.5V 5 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 4 3 VGS=10V 2 VGS=10V ID=20A 1.6 1.4 17 5 2 10 =4.5V 1.2 VGS ID=20A 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 12 1.0E+02 ID=20A 1.0E+01 40 1.0E+00 125°C IS (A) RDS(ON) (mΩ Ω) 9 6 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 3 1.0E-04 25°C 1.0E-05 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: July 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON7242 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2500 VDS=20V ID=20A Ciss 2000 Capacitance (pF) VGS (Volts) 8 6 4 1500 Coss 1000 2 500 0 0 Crss 0 5 10 15 20 25 30 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 25 30 35 40 VDS (Volts) Figure 8: Capacitance Characteristics 200 1000.0 10µs RDS(ON) 100µs 10.0 1.0 TJ(Max)=150°C TC=25°C 1ms 10ms DC TJ(Max)=150°C TC=25°C 160 10µs Power (W) 100.0 ID (Amps) 10 0.1 17 5 2 10 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18Junction-toFigure 10: Single Pulse Power Rating Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 40 RθJC=1.5°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: July 2011 www.aosmd.com Page 4 of 6 AON7242 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 TA=25°C TA=100°C 100 TA=150°C TA=125°C 10 80 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 60 40 20 1 0 1 10 100 1000 0 25 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 50 75 100 150 TCASE (° °C) Figure 13: Power De-rating (Note F) 10000 60 TA=25°C 50 1000 40 Power (W) Current rating ID(A) 125 30 17 5 2 10 100 20 10 10 1 0 0 25 50 75 100 125 TCASE (° °C) Figure 14: Current De-rating (Note F) 150 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 0.00001 0.001 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=55°C/W 0.1 0.01 PD Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: July 2011 www.aosmd.com Page 5 of 6 AON7242 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: July 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6