Datasheet

AON7242
40V N-Channel MOSFET
General Description
Product Summary
The AON7242 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition,switching behavior is well
controlled with a "Schottky style" soft recovery body
diode.
VDS
40V
50A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 3.9mΩ
RDS(ON) (at VGS =4.5V)
< 5.8mΩ
100% UIS Tested
100% Rg Tested
Top View
DFN 3.3x3.3 EP
Bottom View
D
Top View
1
8
2
7
3
6
4
5
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
V
A
255
30
IDSM
TA=70°C
±20
39
IDM
TA=25°C
Units
V
50
ID
TC=100°C
C
Maximum
40
A
25
Avalanche Current C
IAS, IAR
48
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
115
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 0: July 2011
6.2
Steady-State
Steady-State
RθJA
RθJC
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W
4
TJ, TSTG
Symbol
t ≤ 10s
W
33
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
83
PD
TC=100°C
-55 to 150
Typ
16
45
1.1
°C
Max
20
55
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7242
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
1.3
ID(ON)
On state drain current
VGS=10V, VDS=5V
255
VGS=10V, ID=20A
TJ=125°C
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
V
3.2
3.9
A
4.9
80
VDS=5V, ID=20A
Output Capacitance
nA
2.3
4.5
Forward Transconductance
Coss
100
1.8
VGS=4.5V, ID=20A
gFS
µA
5
IGSS
Units
V
1
TJ=55°C
Static Drain-Source On-Resistance
Max
40
VDS=40V, VGS=0V
VGS(th)
RDS(ON)
Typ
0.69
6.0
mΩ
5.8
mΩ
1
V
50
A
S
1575
1970
2365
pF
VGS=0V, VDS=20V, f=1MHz
375
540
705
pF
12
41
70
pF
VGS=0V, VDS=0V, f=1MHz
0.4
0.8
1.2
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
21
26.5
32
nC
Qg(4.5V) Total Gate Charge
9
11.9
15
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=10V, VDS=20V, ID=20A
6.2
nC
2.2
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
12
16
20
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
36
47
58
VGS=10V, VDS=20V, RL=1Ω,
RGEN=3Ω
7
ns
16
ns
23
ns
3
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: July 2011
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Page 2 of 6
AON7242
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
10V
VDS=5V
4V
100
80
4.5V
3.5V
60
ID(A)
ID (A)
80
60
40
125°C
40
VGS=3V
20
20
25°C
0
0
0
1
2
3
4
0
5
6
2
3
4
5
6
Normalized On-Resistance
1.8
VGS=4.5V
5
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
4
3
VGS=10V
2
VGS=10V
ID=20A
1.6
1.4
17
5
2
10
=4.5V
1.2
VGS
ID=20A
1
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
12
1.0E+02
ID=20A
1.0E+01
40
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ
Ω)
9
6
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
3
1.0E-04
25°C
1.0E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: July 2011
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON7242
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
VDS=20V
ID=20A
Ciss
2000
Capacitance (pF)
VGS (Volts)
8
6
4
1500
Coss
1000
2
500
0
0
Crss
0
5
10
15
20
25
30
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
20
25
30
35
40
VDS (Volts)
Figure 8: Capacitance Characteristics
200
1000.0
10µs
RDS(ON)
100µs
10.0
1.0
TJ(Max)=150°C
TC=25°C
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
160
10µs
Power (W)
100.0
ID (Amps)
10
0.1
17
5
2
10
120
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18Junction-toFigure 10: Single Pulse Power Rating
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
40
RθJC=1.5°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: July 2011
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Page 4 of 6
AON7242
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TA=25°C
TA=100°C
100
TA=150°C
TA=125°C
10
80
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
60
40
20
1
0
1
10
100
1000
0
25
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
50
75
100
150
TCASE (°
°C)
Figure 13: Power De-rating (Note F)
10000
60
TA=25°C
50
1000
40
Power (W)
Current rating ID(A)
125
30
17
5
2
10
100
20
10
10
1
0
0
25
50
75
100
125
TCASE (°
°C)
Figure 14: Current De-rating (Note F)
150
0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.00001
0.001
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: July 2011
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Page 5 of 6
AON7242
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: July 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6