SHENZHENFREESCALE AON3814

AON3814
20V N-Channel MOSFET
General Description
The AON3814 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation
with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable
for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.
Features
VDS
20V
ID (at VGS=4.5V)
6A
RDS(ON) (at VGS = 4.5V)
< 17mΩ
RDS(ON) (at VGS = 4V)
< 18.5mΩ
RDS(ON) (at VGS = 3.1V)
< 23mΩ
RDS(ON) (at VGS = 2.5V)
< 24mΩ
ESD Protected
D2
D1
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2 G1
D1
D1
G2
S2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current F
VGS
TC=25°C
Pulsed Drain Current B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
1/5
Steady-State
Steady-State
A
2.5
W
1.6
TJ, TSTG
Symbol
t ≤ 10s
V
40
PD
TC=70°C
±12
5.3
IDM
TC=25°C
Power Dissipation F
Units
V
6
ID
TC=70°C
Maximum
20
RθJA
RθJL
-55 to 150
Typ
40
75
30
°C
Max
50
95
40
Units
°C/W
°C/W
°C/W
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AON3814
20V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±10V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.3
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
40
TJ=55°C
5
VGS=4.5V, ID=6A
TJ=125°C
VGS=4V, ID=6A
10
µA
1.1
V
12.5
17
18.5
24
A
12.9
18.5
mΩ
14
23
mΩ
VGS=2.5V, ID=6A
15.6
24
VGS=1.8V, ID=6A
23
Forward Transconductance
VDS=5V, ID=6A
33
Diode Forward Voltage
IS=1A,VGS=0V
0.6
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=10V, f=1MHz
Qgs
Gate Source Charge
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
V
3.5
A
920
1100
pF
155
200
pF
75
105
2.4
8.8
VGS=5V, VDS=10V, RL=1.7Ω,
RGEN=3Ω
S
1
110
45
VGS=4.5V, VDS=10V, ID=6A
mΩ
mΩ
730
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgd
mΩ
VGS=3.1V, ID=6A
gFS
Output Capacitance
µA
0.7
VSD
Coss
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
20
VDS=20V, VGS=0V
IDSS
RDS(ON)
Typ
11
pF
kΩ
13
nC
1.6
2
2.4
nC
1.9
3.2
4.5
nC
0.3
µs
0.6
µs
7.9
µs
4.4
µs
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The SOA curve provides a single pulse rating.
F. The power dissipation and current rating is based on the t ≤ 10s thermal resistance, and current rating is also limited by wire-bonding.
2/5
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AON3814
20V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
20
10V
3V
VDS=5V
4V
15
20
ID(A)
ID (A)
30
2V
10
125°C
5
10
25°C
VGS=1.5V
0
0
0
1
2
3
4
0
5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Normalized On-Resistance
VGS=1.8V
VGS=2.5V
25
RDS(ON) (mΩ
Ω)
1
1.5
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
20
15
VGS=3.1V
10
VGS=4.5V
VGS=2.5V ID=6A
1.6
VGS=4V ID=6A
1.4
17
VGS=4.5V ID=6A
5
1.2
2
10
1
0.8
5
0
5
10
15
0
20
25
50
75
100
125
150
175
Temperature (°C) 0
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
40
1.0E+02
ID=6A
35
1.0E+01
40
1.0E+00
30
125°
25
IS (A)
RDS(ON) (mΩ
Ω)
2.5
1.8
30
1.0E-02
15
1.0E-03
25°
125°
1.0E-01
20
10
25°
1.0E-04
1.0E-05
5
0
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/5
0.5
2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON3814
20V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
5
Capacitance (pF)
VGS (Volts)
1200
VDS=10V
ID=6A
4
3
2
Ciss
1000
800
600
Coss
400
1
200
0
0
2
4
6
8
10
12
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
14
5
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
TJ(Max)=150°C
TA=25°C
10µs 10µs
RDS(ON)
10.0
Power (W)
100µs
1ms
10ms
1.0
80
17
5
2
10
40
0.1
TJ(Max)=150°C
TA=25°C
DC
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001 0.001
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
0.01
0.1
1
10
0
100
Pulse Width (s)
18Junction-toFigure 10: Single Pulse Power Rating
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
20
120
100.0
ID (Amps)
Crss
0
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=95°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/5
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AON3814
20V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
5/5
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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