AON3814 20V N-Channel MOSFET General Description The AON3814 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Features VDS 20V ID (at VGS=4.5V) 6A RDS(ON) (at VGS = 4.5V) < 17mΩ RDS(ON) (at VGS = 4V) < 18.5mΩ RDS(ON) (at VGS = 3.1V) < 23mΩ RDS(ON) (at VGS = 2.5V) < 24mΩ ESD Protected D2 D1 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 G1 D1 D1 G2 S2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current F VGS TC=25°C Pulsed Drain Current B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C 1/5 Steady-State Steady-State A 2.5 W 1.6 TJ, TSTG Symbol t ≤ 10s V 40 PD TC=70°C ±12 5.3 IDM TC=25°C Power Dissipation F Units V 6 ID TC=70°C Maximum 20 RθJA RθJL -55 to 150 Typ 40 75 30 °C Max 50 95 40 Units °C/W °C/W °C/W www.freescale.net.cn AON3814 20V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±10V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.3 ID(ON) On state drain current VGS=4.5V, VDS=5V 40 TJ=55°C 5 VGS=4.5V, ID=6A TJ=125°C VGS=4V, ID=6A 10 µA 1.1 V 12.5 17 18.5 24 A 12.9 18.5 mΩ 14 23 mΩ VGS=2.5V, ID=6A 15.6 24 VGS=1.8V, ID=6A 23 Forward Transconductance VDS=5V, ID=6A 33 Diode Forward Voltage IS=1A,VGS=0V 0.6 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz Qgs Gate Source Charge Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time V 3.5 A 920 1100 pF 155 200 pF 75 105 2.4 8.8 VGS=5V, VDS=10V, RL=1.7Ω, RGEN=3Ω S 1 110 45 VGS=4.5V, VDS=10V, ID=6A mΩ mΩ 730 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgd mΩ VGS=3.1V, ID=6A gFS Output Capacitance µA 0.7 VSD Coss Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 VDS=20V, VGS=0V IDSS RDS(ON) Typ 11 pF kΩ 13 nC 1.6 2 2.4 nC 1.9 3.2 4.5 nC 0.3 µs 0.6 µs 7.9 µs 4.4 µs A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The power dissipation and current rating is based on the t ≤ 10s thermal resistance, and current rating is also limited by wire-bonding. 2/5 www.freescale.net.cn AON3814 20V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 20 10V 3V VDS=5V 4V 15 20 ID(A) ID (A) 30 2V 10 125°C 5 10 25°C VGS=1.5V 0 0 0 1 2 3 4 0 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) Normalized On-Resistance VGS=1.8V VGS=2.5V 25 RDS(ON) (mΩ Ω) 1 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 20 15 VGS=3.1V 10 VGS=4.5V VGS=2.5V ID=6A 1.6 VGS=4V ID=6A 1.4 17 VGS=4.5V ID=6A 5 1.2 2 10 1 0.8 5 0 5 10 15 0 20 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 40 1.0E+02 ID=6A 35 1.0E+01 40 1.0E+00 30 125° 25 IS (A) RDS(ON) (mΩ Ω) 2.5 1.8 30 1.0E-02 15 1.0E-03 25° 125° 1.0E-01 20 10 25° 1.0E-04 1.0E-05 5 0 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/5 0.5 2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON3814 20V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 Capacitance (pF) VGS (Volts) 1200 VDS=10V ID=6A 4 3 2 Ciss 1000 800 600 Coss 400 1 200 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics 0 14 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TA=25°C 10µs 10µs RDS(ON) 10.0 Power (W) 100µs 1ms 10ms 1.0 80 17 5 2 10 40 0.1 TJ(Max)=150°C TA=25°C DC 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 0.01 0.1 1 10 0 100 Pulse Width (s) 18Junction-toFigure 10: Single Pulse Power Rating Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 20 120 100.0 ID (Amps) Crss 0 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=95°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/5 www.freescale.net.cn AON3814 20V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 5/5 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn