AON7408 30V N-Channel MOSFET General Description Product Summary • The AON7408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in general purpose applications. VDS 30V 18A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 20mΩ RDS(ON) (at VGS=4.5V) < 32mΩ • RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested D DFN 3x3 EP Bottom View Top View Top View 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current B Pulsed Drain Current Continuous Drain Current A C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Rev.8.0: November 2013 11 Steady-State Steady-State W 4.5 3.1 RθJA RθJC www.aosmd.com W 2 TJ, TSTG Symbol t ≤ 10s A 8 PDSM TA=70°C A 10 PD TC=100°C V 64 IDSM TA=70°C ±20 11.5 IDM TA=25°C Units V 18 ID TC=100°C Maximum 30 -55 to 150 Typ 25 62 8.8 °C Max 40 75 11 Units °C/W °C/W °C/W Page 1 of 6 AON7408 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS=±20V VDS=VGS，ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 64 ±100 nA 2.1 2.6 V 15.3 20 23.3 30 VGS=4.5V, ID=5A 22.7 32 mΩ 17 1 V 12 A VGS=10V, ID=10A Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=10A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Rg Gate resistance 373 VGS=0V, VDS=15V, f=1MHz Gate Source Charge Qgd tD(on) 448 67 VGS=4.5V, VDS=15V, ID=10A 0.6 mΩ S pF pF 41 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs A 0.75 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance µA 5 Gate Threshold Voltage Units V 1 VGS(th) Coss Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ pF 1.8 2.8 7.1 8.6 Ω nC 1.2 nC Gate Drain Charge 1.6 nC Turn-On DelayTime 4.3 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=10A, dI/dt=100A/µs 10.5 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs 4.5 VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω 2.8 ns 15.8 ns 3 ns 12.6 ns nC A: The value of RθJA is measured with the device in a still air environment with TA =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. The maximum current rating is limited by bond-wires. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.8.0: November 2013 www.aosmd.com Page 2 of 6 AON7408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 15 6V 10V VDS=5V 50 12 9 4.5V ID(A) ID (A) 40 30 6 20 VGS=3.5V 125°C 3 10 25°C 0 0 0 1 2 3 4 1.5 5 40 2.5 3 3.5 4 4.5 Normalized On-Resistance 1.8 35 RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 30 VGS=4.5V 25 20 VGS=10V 15 VGS=10V 1.6 1.4 17 5 2 10 =4.5V 1.2 VGS 1 0.8 10 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature 60 1.0E+01 ID=10A 1.0E+00 50 40 40 IS (A) RDS(ON) (mΩ Ω) 1.0E-01 125°C 30 125°C 1.0E-02 25°C 1.0E-03 20 1.0E-04 25°C 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev.8.0: November 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 6 AON7408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 600 VDS=15V ID=10A 500 8 Capacitance (pF) VGS (Volts) Ciss 6 4 2 300 200 Coss 100 0 Crss 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 8 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 100 100 100µs RDS(ON) limited 1 0.1 DC 1ms 10ms TJ(Max)=150°C Tc=25°C 80 Power (W) 10µs 10µs 10 ID (Amps) 400 TJ(Max)=150°C Tc=25°C 17 5 2 10 60 40 20 0.01 0 0.1 1 10 100 0.0001 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note H) 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18Junction-to-Case Figure 10: Single Pulse Power Rating (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJc=11°C/W PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.8.0: November 2013 www.aosmd.com Page 4 of 6 AON7408 15 25 12 20 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 9 6 3 15 10 5 0 0 0 25 50 75 100 125 TCASE (° °C) Figure 12: Power De-rating (Note F) 150 0 25 50 75 100 125 TCASE (° °C) Figure 13: Current De-rating (Note F) 150 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 1000 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.8.0: November 2013 www.aosmd.com Page 5 of 6 AON7408 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev.8.0: November 2013 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6