AON2405 20V P-Channel MOSFET General Description The AON2405 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Features VDS -20V ID (at VGS=-4.5V) -8A RDS(ON) (at VGS =-4.5V) < 32mΩ RDS(ON) (at VGS =-2.5V) < 41mΩ RDS(ON) (at VGS =-1.8V) < 56mΩ RDS(ON) (at VGS =-1.5V) < 70mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage TA=25°C Continuous Drain Current G Pulsed Drain Current Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D 1/5 Steady-State A A 2.8 W 1.8 TJ, TSTG Symbol t ≤ 10s V -32 PD TA=70°C ±8 -6 IDM TA=25°C Units V -8 ID TA=70°C C Maximum -20 RθJA -55 to 150 Typ 37 66 °C Max 45 80 Units °C/W °C/W www.freescale.net.cn AON2405 20V P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -20 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µA -0.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -32 TJ=55°C nA V 26 32 35 43 VGS=-2.5V, ID=-5A 32 41 mΩ VGS=-1.8V, ID=-2A 41 56 mΩ VGS=-1.5V, ID=-2A 46 70 mΩ 23 Forward Transconductance VDS=-5V, ID=-8A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge µA -0.9 gFS Output Capacitance -5 ±100 TJ=125°C Coss Units -0.65 VGS=-4.5V, ID=-8A Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V IDSS RDS(ON) Typ A -0.62 S -1 V -4.5 A 1025 pF 167 pF 119 pF 11 Ω 13 VGS=-4.5V, VDS=-10V, ID=-8A mΩ 18 nC 2 nC Qgd Gate Drain Charge 3.4 nC tD(on) Turn-On DelayTime 7 ns tr Turn-On Rise Time 28 ns tD(off) Turn-Off DelayTime 95 ns tf Turn-Off Fall Time 46 ns ns nC VGS=-4.5V, VDS=-10V, RL=1.25Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=100A/µs 15 Qrr Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/µs 4 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 2/5 www.freescale.net.cn AON2405 20V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 25 -4.5V VDS=-5V -4V 50 20 -3V 40 15 -ID(A) -ID (A) -2.5V 30 -2V 10 VGS=-1.5V 5 20 125°C 10 25°C 0 0 0 1 2 3 4 0 5 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 80 60 VGS=-1.8V 40 VGS=-2.5V 20 VGS=-4.5V Normalized On-Resistance 1.6 VGS=-1.5V RDS(ON) (mΩ Ω) 0.5 VGS=-1.8V ID=-5A VGS=-2.5V ID=-6A 1.4 17 5 2 10 =-4.5V 1.2 VGS ID=-8A 1 0.8 0 0 1 2 3 0 4 5 6 7 8 9 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 1.0E+02 80 ID=-8A 1.0E+01 -IS (A) 70 RDS(ON) (mΩ Ω) 60 40 125°C 1.0E+00 1.0E-01 50 125°C 1.0E-02 25°C 40 1.0E-03 30 25°C 20 1.0E-05 0 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/5 1.0E-04 2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON2405 20V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1400 VDS=-10V ID=-8A Ciss 1200 1000 Capacitance (pF) -VGS (Volts) 4 3 2 800 600 Coss 400 1 200 0 0 3 6 9 12 Qg (nC) Figure 7: Gate-Charge Characteristics 15 0 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 20 200 100.0 10µs 10µs 100µs RDS(ON) limited 1ms 10ms 1.0 DC 17 5 2 10 120 TJ(Max)=150°C TA=25°C 0.1 TJ(Max)=150°C TA=25°C 160 Power (W) 10.0 -ID (Amps) Crss 0 80 40 0.0 0 0.01 0.1 1 -VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18Junction-toFigure 10: Single Pulse Power Rating Ambient (Note H) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=80°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note H) 4/5 www.freescale.net.cn AON2405 20V P-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 5/5 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.freescale.net.cn