AON7408 30V N-Channel MOSFET General Description Features The AON7408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in general purpose applications. VDS (V) = 30V ID = 23A (VGS = 10V) RDS(ON) < 20mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) 100% UIS Tested! DFN 3x3 EP Bottom View Top View D Top View 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current B Pulsed Drain Current C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B 8 16.7 7 2 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. W 3.1 PDSM TA=70°C A 10 PD TC=100°C V 64 IDSM TA=70°C ±20 15 IDM TA=25°C Continuous Drain Current A Units V 23 ID TC=100°C Maximum 30 RθJA RθJC Typ 25 62 6.2 °C Max 40 75 7.5 Units °C/W °C/W °C/W www.aosmd.com AON7408 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 1 TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS , ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 64 ±100 VGS=10V, ID=10A TJ=125°C 17 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Rg Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr 0.75 373 VGS=0V, VDS=15V, f=1MHz VGS=4.5V, VDS=15V, ID=10A VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω IF=10A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs µA nA V A 32 VSD Reverse Transfer Capacitance 20 30 IS Output Capacitance 15.3 22.7 VDS=5V, ID=10A Coss 2.6 23.3 Forward Transconductance Crss 2.1 VGS=4.5V, ID=5A gFS Units V VDS=30V, VGS=0V Static Drain-Source On-Resistance Max 30 VGS(th) RDS(ON) Typ mΩ S 1 V 3.8 A 448 pF 67 pF 41 pF 1.8 2.8 Ω 7.1 8.6 nC 1.2 nC 1.6 nC 4.3 ns 2.8 ns 15.8 ns 3 ns 10.5 12.6 4.5 ns nC A: The value of RθJA is measured with the device in a still air environment with TA =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. The maximum current rating is limited by bond-wires. Rev5: May-2012 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 15 10V VDS=5V 6V 50 12 9 4.5V ID(A) ID (A) 40 30 6 20 125°C VGS=3.5V 3 10 0 25°C 0 0 1 2 3 4 5 1.5 VDS (Volts) Fig 1: On-Region Characteristics 3 Normalized On-Resistance 30 3.5 4 373 67 41 VGS=10V 1.2 1.8 35 RDS(ON) (mΩ Ω) 2.5 4.5 VGS(Volts) Figure 2: Transfer Characteristics 40 VGS=4.5V 25 20 VGS=10V 15 10 1.6 448 1.8 7.1 3.5 1.2 1.6 1.4 1.2 1 8.6 VGS=4.5V 0.8 0.6 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 60 ID=10A 1.0E+00 50 1.0E-01 40 IS (A) RDS(ON) (mΩ Ω) 2 125°C 1.0E-02 125°C 30 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 25°C 1.0E-03 20 1.0E-04 25°C 10 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AON7408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 10 VDS=15V ID=10A 500 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 400 300 Coss 200 100 0 Crss 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 8 0 100 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 373 67 41 1.2 1000 10µs 100µs DC 1 1ms 10ms RDS(ON) limited Power (W) ID (Amps) 10 448 1.8 TJ(Max)=150°C TA=25°C 7.1 3.5 1.2 1.6 100 30 8.6 10 0.1 TJ(Max)=150°C TA=25°C 0.01 1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note H) 0.0001 0.01 1 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES PD NOT ASSUME ANY LIABILITY ARISING COMPONENTS OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.01 1E-05 0.0001 0.001 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 0.01 1000 www.aosmd.com