AOSMD AON7408

AON7408
30V N-Channel MOSFET
General Description
Features
The AON7408 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in general
purpose applications.
VDS (V) = 30V
ID = 23A
(VGS = 10V)
RDS(ON) < 20mΩ (VGS = 10V)
RDS(ON) < 32mΩ (VGS = 4.5V)
100% UIS Tested!
DFN 3x3 EP
Bottom View
Top View
D
Top View
1
8
2
7
3
6
4
5
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current B
Pulsed Drain Current
C
TC=25°C
Power Dissipation
B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
8
16.7
7
2
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
Alpha & Omega Semiconductor, Ltd.
W
3.1
PDSM
TA=70°C
A
10
PD
TC=100°C
V
64
IDSM
TA=70°C
±20
15
IDM
TA=25°C
Continuous Drain
Current A
Units
V
23
ID
TC=100°C
Maximum
30
RθJA
RθJC
Typ
25
62
6.2
°C
Max
40
75
7.5
Units
°C/W
°C/W
°C/W
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AON7408
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
1
TJ=55°C
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS , ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
64
±100
VGS=10V, ID=10A
TJ=125°C
17
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
0.75
373
VGS=0V, VDS=15V, f=1MHz
VGS=4.5V, VDS=15V, ID=10A
VGS=10V, VDS=15V, RL=1.5Ω,
RGEN=3Ω
IF=10A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs
µA
nA
V
A
32
VSD
Reverse Transfer Capacitance
20
30
IS
Output Capacitance
15.3
22.7
VDS=5V, ID=10A
Coss
2.6
23.3
Forward Transconductance
Crss
2.1
VGS=4.5V, ID=5A
gFS
Units
V
VDS=30V, VGS=0V
Static Drain-Source On-Resistance
Max
30
VGS(th)
RDS(ON)
Typ
mΩ
S
1
V
3.8
A
448
pF
67
pF
41
pF
1.8
2.8
Ω
7.1
8.6
nC
1.2
nC
1.6
nC
4.3
ns
2.8
ns
15.8
ns
3
ns
10.5
12.6
4.5
ns
nC
A: The value of RθJA is measured with the device in a still air environment with TA =25°C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. The maximum current rating is limited by bond-wires.
Rev5: May-2012
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON7408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
15
10V
VDS=5V
6V
50
12
9
4.5V
ID(A)
ID (A)
40
30
6
20
125°C
VGS=3.5V
3
10
0
25°C
0
0
1
2
3
4
5
1.5
VDS (Volts)
Fig 1: On-Region Characteristics
3
Normalized On-Resistance
30
3.5
4
373
67
41
VGS=10V
1.2
1.8
35
RDS(ON) (mΩ
Ω)
2.5
4.5
VGS(Volts)
Figure 2: Transfer Characteristics
40
VGS=4.5V
25
20
VGS=10V
15
10
1.6
448
1.8
7.1
3.5
1.2
1.6
1.4
1.2
1
8.6
VGS=4.5V
0.8
0.6
0
5
10
15
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
60
ID=10A
1.0E+00
50
1.0E-01
40
IS (A)
RDS(ON) (mΩ
Ω)
2
125°C
1.0E-02
125°C
30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES
AS CRITICAL
25°C
1.0E-03
20
1.0E-04
25°C
10
2
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AON7408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600
10
VDS=15V
ID=10A
500
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
400
300
Coss
200
100
0
Crss
0
0
2
4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
8
0
100
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
373
67
41
1.2
1000
10µs
100µs
DC
1
1ms
10ms
RDS(ON)
limited
Power (W)
ID (Amps)
10
448
1.8
TJ(Max)=150°C
TA=25°C
7.1
3.5
1.2
1.6
100
30
8.6
10
0.1
TJ(Max)=150°C
TA=25°C
0.01
1
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note H)
0.0001
0.01
1
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
PD NOT ASSUME ANY LIABILITY ARISING
COMPONENTS
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
Single Pulse
0.01
1E-05
0.0001
0.001
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
0.01
1000
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