AON6414A 30V N-Channel MOSFET General Description Product Summary The AON6414A uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. ID (at VGS=10V) VDS 30V 30A RDS(ON) (at VGS=10V) < 8mΩ RDS(ON) (at VGS=4.5V) < 10.5mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C G ID V A 30 Pulsed Drain Current C Avalanche Current ±20 50 TC=100°C IDM TA=25°C Continuous Drain Current Units V 30 TC=25°C I Continuous Drain Current Maximum 30 140 13 IDSM TA=70°C C A 10 IAS, IAR 35 A Avalanche energy L=0.05mH C EAS, EAR 31 mJ VDS Spike VSPIKE 36 V Power Dissipation B 100ns TC=25°C PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev.4.0 March 2013 2.3 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.5 TJ, TSTG Symbol t ≤ 10s W 12.5 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 31 -55 to 150 Typ 17 44 3.4 °C Max 21 53 4 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 140 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=55°C 5 100 VGS=10V, ID=20A Reverse Transfer Capacitance Rg Gate resistance 2.5 8 11.4 VGS=4.5V, ID=20A 8.2 10.5 VDS=5V, ID=20A 55 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz µA nA V A 6.6 DYNAMIC PARAMETERS Ciss Input Capacitance Crss 1.95 9.5 TJ=125°C Units V 1 Zero Gate Voltage Drain Current Output Capacitance Max 30 VDS=30V, VGS=0V IDSS Coss Typ 0.72 mΩ mΩ S 1 V 35 A 920 1150 1380 pF 125 180 235 pF 60 105 150 pF 0.55 1.1 1.65 Ω nC SWITCHING PARAMETERS Qg(10V) Total Gate Charge 16 20 24 Qg(4.5V) Total Gate Charge 7.6 9.5 11.4 nC 2 2.7 3.2 nC 5 7 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=10V, VDS=15V, ID=20A 3 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 6.5 ns 2 ns 17 ns 3.5 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, dI/dt=500A/µs µ 7 8.7 10.5 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 11 13.5 16 Body Diode Reverse Recovery Time ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. I. The maximum current rating is limited by silicon COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.4.0 March 2013 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 10V 100 6V VDS=5V 120 5V 7V 80 100 60 ID(A) ID (A) 4.5V 80 4V 60 40 40 3.5V 20 125°C 20 VGS=3V 0 0 1 2 3 4 0 5 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 12 Normalized On-Resistance 1.8 10 VGS=4.5V RDS(ON) (mΩ Ω) 25°C 8 6 VGS=10V 4 2 VGS=10V ID=20A 1.6 1.4 17 5 VGS=4.5V ID=20A 2 1.2 10 1 0.8 0 5 10 15 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 25 1.0E+02 ID=20A 1.0E+01 20 40 125°C 15 IS (A) RDS(ON) (mΩ Ω) 1.0E+00 125°C 10 25°C 1.0E-01 1.0E-02 1.0E-03 5 1.0E-04 25°C 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.4.0 March 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1600 10 VDS=15V ID=20A 1400 Ciss 1200 Capacitance (pF) VGS (Volts) 8 6 4 1000 800 600 400 2 Coss 200 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 0 20 RDS(ON) limited 10.0 100µs 1ms DC 1.0 0.1 10ms TJ(Max)=150°C TC=25°C 0.0 0.01 17 5 2 10 120 80 40 0.1 1 10 100 0 0.0001 0.01 0.1 1 10 Pulse Width (s) 18Junction-toFigure 10: Single Pulse Power Rating Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0.001 0 VDS (Volts) Zθ JC Normalized Transient Thermal Resistance 30 TJ(Max)=150°C TC=25°C 160 10µs Power (W) 10µs 100.0 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 200 1000.0 ID (Amps) Crss 0 0 40 RθJC=4°C/W 0.1 PD Single Pulse 0.01 Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.4.0 March 2013 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 35 TA=25°C 60 30 50 Power Dissipation (W) IAR (A) Peak Avalanche Current 70 TA=150°C TA=100°C 40 30 20 TA=125°C 10 25 20 15 10 5 0 0 0.000001 0.00001 0.0001 0 0.001 25 50 75 100 125 150 TCASE (° °C) Figure 13: Power De-rating (Note F) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 40 10000 30 1000 Power (W) Current rating ID(A) TA=25°C 20 10 10 1 0.00001 0 0 25 50 75 100 125 150 TCASE (° °C) Figure 14: Current De-rating (Note F) 10 Zθ JA Normalized Transient Thermal Resistance 17 5 2 10 100 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 0.001 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=53°C/W 0.1 PD 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 Ton 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.4.0 March 2013 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs td(on) tr td(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.4.0 March 2013 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6