Datasheet

AON6414A
30V N-Channel MOSFET
General Description
Product Summary
The AON6414A uses advanced trench technology to
provide excellent RDS(ON), low gate charge.This device is
suitable for use as a high side switch in SMPS and
general purpose applications.
ID (at VGS=10V)
VDS
30V
30A
RDS(ON) (at VGS=10V)
< 8mΩ
RDS(ON) (at VGS=4.5V)
< 10.5mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C G
ID
V
A
30
Pulsed Drain Current C
Avalanche Current
±20
50
TC=100°C
IDM
TA=25°C
Continuous Drain
Current
Units
V
30
TC=25°C I
Continuous Drain
Current
Maximum
30
140
13
IDSM
TA=70°C
C
A
10
IAS, IAR
35
A
Avalanche energy L=0.05mH C
EAS, EAR
31
mJ
VDS Spike
VSPIKE
36
V
Power Dissipation B
100ns
TC=25°C
PD
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev.4.0 March 2013
2.3
Steady-State
Steady-State
RθJA
RθJC
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W
1.5
TJ, TSTG
Symbol
t ≤ 10s
W
12.5
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
31
-55 to 150
Typ
17
44
3.4
°C
Max
21
53
4
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
140
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=55°C
5
100
VGS=10V, ID=20A
Reverse Transfer Capacitance
Rg
Gate resistance
2.5
8
11.4
VGS=4.5V, ID=20A
8.2
10.5
VDS=5V, ID=20A
55
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
µA
nA
V
A
6.6
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
1.95
9.5
TJ=125°C
Units
V
1
Zero Gate Voltage Drain Current
Output Capacitance
Max
30
VDS=30V, VGS=0V
IDSS
Coss
Typ
0.72
mΩ
mΩ
S
1
V
35
A
920
1150
1380
pF
125
180
235
pF
60
105
150
pF
0.55
1.1
1.65
Ω
nC
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
16
20
24
Qg(4.5V) Total Gate Charge
7.6
9.5
11.4
nC
2
2.7
3.2
nC
5
7
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
VGS=10V, VDS=15V, ID=20A
3
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
6.5
ns
2
ns
17
ns
3.5
ns
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=20A, dI/dt=500A/µs
µ
7
8.7
10.5
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
11
13.5
16
Body Diode Reverse Recovery Time
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
I. The maximum current rating is limited by silicon
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.4.0 March 2013
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140
10V
100
6V
VDS=5V
120
5V
7V
80
100
60
ID(A)
ID (A)
4.5V
80
4V
60
40
40
3.5V
20
125°C
20
VGS=3V
0
0
1
2
3
4
0
5
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
12
Normalized On-Resistance
1.8
10
VGS=4.5V
RDS(ON) (mΩ
Ω)
25°C
8
6
VGS=10V
4
2
VGS=10V
ID=20A
1.6
1.4
17
5
VGS=4.5V
ID=20A 2
1.2
10
1
0.8
0
5
10
15
20
25
30
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
25
1.0E+02
ID=20A
1.0E+01
20
40
125°C
15
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
125°C
10
25°C
1.0E-01
1.0E-02
1.0E-03
5
1.0E-04
25°C
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.4.0 March 2013
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1600
10
VDS=15V
ID=20A
1400
Ciss
1200
Capacitance (pF)
VGS (Volts)
8
6
4
1000
800
600
400
2
Coss
200
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
20
RDS(ON)
limited
10.0
100µs
1ms
DC
1.0
0.1
10ms
TJ(Max)=150°C
TC=25°C
0.0
0.01
17
5
2
10
120
80
40
0.1
1
10
100
0
0.0001
0.01
0.1
1
10
Pulse Width (s)
18Junction-toFigure 10: Single Pulse Power Rating
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
0.001
0
VDS (Volts)
Zθ JC Normalized Transient
Thermal Resistance
30
TJ(Max)=150°C
TC=25°C
160
10µs
Power (W)
10µs
100.0
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
200
1000.0
ID (Amps)
Crss
0
0
40
RθJC=4°C/W
0.1
PD
Single Pulse
0.01
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.4.0 March 2013
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
TA=25°C
60
30
50
Power Dissipation (W)
IAR (A) Peak Avalanche Current
70
TA=150°C
TA=100°C
40
30
20
TA=125°C
10
25
20
15
10
5
0
0
0.000001
0.00001
0.0001
0
0.001
25
50
75
100
125
150
TCASE (°
°C)
Figure 13: Power De-rating (Note F)
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
40
10000
30
1000
Power (W)
Current rating ID(A)
TA=25°C
20
10
10
1
0.00001
0
0
25
50
75
100
125
150
TCASE (°
°C)
Figure 14: Current De-rating (Note F)
10
Zθ JA Normalized Transient
Thermal Resistance
17
5
2
10
100
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.001
0.1
10
0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=53°C/W
0.1
PD
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
Ton
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.4.0 March 2013
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.4.0 March 2013
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6