Datasheet

AON6442
40V N-Channel MOSFET
General Description
Product Summary
The AON6442 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss. In addition,switching behavior is well
controlled with a "Schottky style" soft recovery body
diode.
VDS
40V
32A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 4.8mΩ
RDS(ON) (at VGS = 4.5V)
< 7mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
PIN1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current G
VGS
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
V
A
168
22
IDSM
TA=70°C
±20
25
IDM
TA=25°C
Units
V
32
ID
TC=100°C
Maximum
40
A
18
Avalanche Current C
IAS, IAR
40
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
80
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 0 : Dec 2009
4.2
Steady-State
Steady-State
RθJA
RθJC
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W
2.7
TJ, TSTG
Symbol
t ≤ 10s
W
14
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
35.7
PD
TC=100°C
-55 to 150
Typ
25
55
2.6
°C
Max
30
65
3.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6442
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
Typ
40
1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.4
ID(ON)
On state drain current
VGS=10V, VDS=5V
168
TJ=55°C
µA
5
VDS=0V, VGS=±20V
100
VGS=10V, ID=20A
1.9
2.4
4
4.8
6.2
7.5
VGS=4.5V, ID=15A
5.5
7
VDS=5V, ID=20A
67
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
Maximum Body-Diode Continuous Current
G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
nA
V
A
RDS(ON)
TJ=125°C
Units
V
VDS=40V, VGS=0V
IDSS
IS
Max
mΩ
mΩ
S
1
V
32
A
pF
1460
1830
2200
365
521
680
pF
20
43
73
pF
0.4
0.8
1.2
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
22
27.8
35
nC
Qg(4.5V) Total Gate Charge
10
12.8
15
nC
3
3.9
5
nC
6
10
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=20V, ID=20A
2
VGS=10V, VDS=20V, RL=1Ω,
RGEN=3Ω
7.2
ns
3
ns
23
ns
3.5
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
11
16.5
21
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
28
40
52
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Dec. 2009
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Page 2 of 6
AON6442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
4.5V
10V
VDS=5V
6V
80
60
3.5V
7V
ID(A)
ID (A)
60
40
40
3V
125°C
20
20
25°C
VGS=2.5V
0
0
0
1
2
3
4
1
5
10
2
2.5
3
3.5
4
Normalized On-Resistance
2
8
VGS=4.5V
RDS(ON) (mΩ
Ω)
1.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
6
4
VGS=10V
2
VGS=10V
ID=20A
1.8
1.6
17
5
2
VGS=4.5V10
1.4
1.2
ID=15A
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
1.0E+02
15
ID=20A
1.0E+01
12
40
9
125°C
6
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
3
25°C
1.0E-04
1.0E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Dec 2009
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON6442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3000
VDS=20V
ID=20A
2500
8
Capacitance (pF)
VGS (Volts)
Ciss
6
4
2
1500
Coss
1000
500
0
Crss
0
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
0
40
TJ(Max)=150°C
TC=25°C
10µs
100.0
160
10µs
RDS(ON)
limited
100µs
1ms
10ms
1.0
DC
TJ(Max)=150°C
TC=25°C
0.1
Power (W)
10.0
5
10
15
20
25
30
35
VDS (Volts)
Figure 8: Capacitance Characteristics
200
1000.0
ID (Amps)
2000
17
5
2
10
120
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18Junction-toFigure 10: Single Pulse Power Rating
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=3.5°C/W
1
PD
0.1
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Dec 2009
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Page 4 of 6
AON6442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=25°C
TA=100°C
100
TA=150°C
30
20
10
TA=125°C
10
0
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
40
10000
30
1000
20
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
17
5
2
10
100
10
10
1
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.1
10 0
1000
Pulse Width (s) 18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.00001
150
10
Zθ JA Normalized Transient
Thermal Resistance
25
TA=25°C
Power (W)
Current rating ID(A)
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.001
40
RθJA=65°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Dec 2009
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Page 5 of 6
AON6442
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: Dec 2009
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6