Datasheet

AON6400
30V N-Channel MOSFET
General Description
Product Summary
The AON6400 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load
switch and battery protection applications.
ID (at VGS=10V)
VDS
30V
85A
RDS(ON) (at VGS=10V)
< 1.4mΩ
RDS(ON) (at VGS = 4.5V)
< 1.8mΩ
• RoHS and Halogen-Free Compliant.
100% UIS Tested
100% Rg Tested
DFN5x6
Top View
D
Bottom View
Top View
PIN1
1
8
2
7
3
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current G
VGS
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
V
A
400
31
IDSM
TA=70°C
±20
67
IDM
TA=25°C
Units
V
85
ID
TC=100°C
Maximum
30
A
25
Avalanche Current C
IAS, IAR
90
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
405
mJ
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
TA=25°C
Rev 2.0 : September 2014
2.3
Steady-State
Steady-State
RθJA
RθJC
W
1.45
TJ, TSTG
Symbol
t ≤ 10s
W
83
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
200
PD
-55 to 150
Typ
14
40
0.45
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°C
Max
17
55
0.6
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Typ
Max
Units
30
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
400
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS
Maximum Body-Diode Continuous Current
TJ=55°C
5
1
VGS=10V, ID=20A
1.7
µA
µA
2.2
V
A
1.15
1.4
1.75
2.1
VGS=4.5V, ID=20A
1.45
1.8
mΩ
VDS=5V, ID=20A
140
IS=1A,VGS=0V
0.65
1
V
85
A
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
mΩ
S
5500
6900
8300
pF
740
1060
1380
pF
440
730
1020
pF
0.6
1.2
1.8
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
110
140
170
nC
Qg(4.5V)
Total Gate Charge
55
70
84
nC
Qgs
Gate Source Charge
16
20
24
nC
Qgd
Gate Drain Charge
20
32
45
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=20A, dI/dt=500A/µs
15
19
23
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
44
55
66
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Body Diode Reverse Recovery Time
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
12
ns
13
ns
88
ns
32
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design,and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2.0 : September 2014
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
10V
VDS=5V
100
80
4.5V
3V
80
ID(A)
ID (A)
60
60
40
125°C
40
VGS=2.5V
20
20
25°C
0
0
0
1
2
3
4
5
1
3
2
VGS=4.5V
1
VGS=10V
0
0
5
2.5
3
1.8
VGS=10V
ID=20A
1.6
17
5
2
10
1.4
1.2
VGS=4.5V
ID=15A
1
0.8
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction18
Temperature
(Note E)
5
1.0E+02
ID=20A
1.0E+01
4
40
1.0E+00
3
IS (A)
RDS(ON) (mΩ)
2
2
Normalized On-Resistance
RDS(ON) (mΩ)
1.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
125°C
2
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
1
25°C
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2.0 : September 2014
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
10000
VDS=15V
ID=20A
8000
Capacitance (pF)
VGS (Volts)
8
6
4
6000
4000
Coss
2
2000
0
0
0
30
60
90
120
Qg (nC)
Figure 7: Gate-Charge Characteristics
150
10.0
DC
800
1ms
10ms
700
1.0
TJ(Max)=150°C
TC=25°C
0.1
30
900
100µs
Power (W)
ID (Amps)
10µs
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
1000
10µs
100.0
Crss
0
1000.0
RDS(ON)
limited
Ciss
600
17
500
400
TJ(Max)=150°C5
TC=25°C
2
300
10
200
100
0.0
0.01
0.1
1
10
100
0
0.0001
ZθJC Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0.01
0.1
1
10
Pulse Width (s)
18Junction-toFigure 10: Single Pulse Power Rating
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
0.001
0
VDS (Volts)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=0.6°C/W
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2.0 : September 2014
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
250
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=25°C
TA=100°C
100
TA=150°C
TA=125°C
10
200
150
100
50
0
1
10
100
1000
0
25
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
50
75
100
150
10000
100
90
TA=25°C
80
1000
70
Power (W)
Current rating ID(A)
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
60
50
40
30
17
5
2
10
100
10
20
10
0
0
25
50
75
100
125
150
1
0.0001
TCASE (°C)
Figure 14: Current De-rating (Note F)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.01
1
100
0
Pulse Width (s) 18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1
PD
0.01
Ton
Single Pulse
0.001
0.001
0.01
0.1
1
10
T
100
1000
10000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 2.0 : September 2014
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev 2.0 : September 2014
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6