AON6450L N-Channel SDMOS TM Power Transistor General Description Product Summary The AON6450L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Parameter VDS ID (at VGS=10V) 100V 52A RDS(ON) (at VGS=10V) < 14.5mΩ RDS(ON) (at VGS = 7V) < 17.5mΩ 100% UIS Tested! 100% R g Tested! - RoHS Compliant - Halogen Free D Top View Fits SOIC8 footprint ! G S DFN5X6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C C TC=25°C Power Dissipation B TA=25°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case EAR Steady-State Steady-State 41 A 84 mJ W 33 2.3 RθJA RθJC www.aosmd.com W 1.4 TJ, TSTG Symbol t ≤ 10s A 83 PDSM Junction and Storage Temperature Range Rev 0: January 2009 9 PD TC=100°C A 7 IAR Repetitive avalanche energy L=0.1mH V 110 IDSM TA=70°C ±25 33 IDM TA=25°C Continuous Drain Current Units V 52 ID TC=100°C Maximum 100 °C -55 to 150 Typ 14 40 1 Max 17 55 1.5 Units °C/W °C/W °C/W Page 1 of 7 AON6450L Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V VDS=100V, VGS=0V 100 50 Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) ID(ON) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 2.8 VGS=10V, VDS=5V 110 VGS=10V, ID=20A TJ=125°C VGS=7V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current IS VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=50V, ID=20A Units V TJ=55°C Static Drain-Source On-Resistance Max 10 IGSS RDS(ON) Typ µA 100 nA 3.4 4 V 12.1 14.5 22.8 27.5 14 17.5 mΩ 1 V 52 A A 52 0.7 mΩ S 2000 2570 3100 pF 170 250 330 pF 50 80 120 pF 0.4 0.8 1.2 Ω 34 43 52 nC 9 11.5 14 nC 11 14 17 nC 8 13.5 19 nC VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 15 ns 5 ns 28.5 ns 5 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 17 24 31 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 75 108 140 ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. Rev 0: January 2009 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: January 2009 www.aosmd.com Page 2 of 7 AON6450L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 110 110 10V 100 7V 90 7.5V 90 6.5V 80 70 70 60 60 ID(A) ID (A) 80 50 6V 40 VDS=5V 100 50 40 30 30 20 10 125°C 20 VGS=5.5V 10 25°C 0 0 0 1 2 3 4 0 5 16 2 3 4 5 6 7 8 Normalized On-Resistance 2.2 15 RDS(ON) (mΩ) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=7V 14 13 VGS=10V 12 11 2 VGS=10V ID=20A 1.8 1.6 1.4 VGS=7V ID=20A 1.2 17 5 2 10 1 0.8 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 30 1.0E+02 ID=20A 1.0E+01 25 40 125°C 20 IS (A) RDS(ON) (mΩ) 1.0E+00 15 1.0E-01 125° 1.0E-02 25°C 1.0E-03 25°C 10 1.0E-04 1.0E-05 5 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: January 2009 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 (Note E) Page 3 of 7 AON6450L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3500 VDS=50V ID=20A 3000 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 2500 2000 1500 Coss 1000 Crss 500 0 0 0 10 20 30 40 50 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 20 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 400 1000.0 TJ(Max)=150°C TC=25°C 350 10µs 10.0 RDS(ON) limited 100µs DC 1.0 1ms TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 300 10µs Power (W) ID (Amps) 100.0 0.1 250 150 100 50 1 10 VDS (Volts) ZθJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 100 1000 0 0.0001 0.001 0.01 1 0 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 PD 0.1 Ton 0.01 0.00001 0.1 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) RθJC=1.5°C/W 1 17 5 2 10 200 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 60 Single Pulse 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: January 2009 www.aosmd.com Page 4 of 7 AON6450L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 90 80 50 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 60 TA=100°C 40 30 TA=150°C 20 10 TA=125°C 70 60 50 40 30 20 10 0 0 0.000001 0 0.00001 0.0001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 60 TA=25°C 50 1000 40 Power (W) Current rating ID(A) 25 30 20 17 5 2 10 100 10 10 1 0.0001 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.01 1 100 10000 0 18 150 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=55°C/W 0.1 PD 0.01 Ton Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Rev 0: January 2009 www.aosmd.com Page 5 of 7 AON6450L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 26 20 25ºC 16 Qrr 90 18 125ºC 20 trr (ns) 120 Irm (A) Qrr (nC) 25 22 150 25ºC Irm 8 0 5 10 15 20 25 0 125ºC 10 30 6 Irm 0 0 200 400 600 800 125ºC 25 20 2 1000 1.5 trr 25ºC 1 15 25ºC 0 0 www.aosmd.com 200 400 0.5 S 125º 5 di/dt (A/µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev 0: January 2009 30 2 10 25ºC 25 Is=20A trr (ns) 14 60 20 35 Irm (A) Qrr (nC) 25ºC Qrr 15 40 18 90 10 30 150 120 5 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 22 125ºC 0.4 125ºC 0 26 180 25ºC S IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current Is=20A 1.2 0 30 210 25ºC 1.6 0.8 5 10 0 trr 10 12 30 di/dt=800A/µs 15 14 60 2 125ºC S 180 30 24 125ºC di/dt=800A/µs S 210 600 800 0 1000 di/dt (A/µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 6 of 7 AON6450L Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 0: January 2009 Vgs Isd L + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com Page 7 of 7