Datasheet

AON6416
30V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
The AON6416 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well
suited for PWM, load switching and general purpose
applications.
VDS
30V
22A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 8mΩ
RDS(ON) (at VGS = 4.5V)
< 14mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
PIN1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
C
Continuous Drain
Current
V
A
110
14
IDSM
TA=70°C
±20
17
IDM
TA=25°C
Units
V
22
ID
TC=100°C
Maximum
30
A
11
Avalanche Current C
IAR
30
A
Repetitive avalanche energy L=0.1mH C
TC=25°C
EAR
45
mJ
Power Dissipation B
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 1: November 2010
2.4
Steady-State
Steady-State
RθJA
RθJC
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W
1.5
TJ, TSTG
Symbol
t ≤ 10s
W
12.5
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
31
PD
-55 to 150
Typ
17
44
3.4
°C
Max
21
53
4
Units
°C/W
°C/W
°C/W
Page 1 of 7
AON6416
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
50
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
110
100
nA
2.4
V
6.8
8
9.2
11
VGS=4.5V, ID=20A
11
14
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=20A
40
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
1.8
VGS=10V, ID=20A
Output Capacitance
Units
V
10
IGSS
Coss
Max
30
VDS=30V, VGS=0V
VGS(th)
RDS(ON)
Typ
mΩ
mΩ
S
1
V
35
A
950
1190
1430
pF
VGS=0V, VDS=15V, f=1MHz
150
220
290
pF
80
130
180
pF
VGS=0V, VDS=0V, f=1MHz
0.55
1.1
1.7
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
18
23
28
nC
Qg(4.5V) Total Gate Charge
9
11
13
nC
2.4
3
3.6
nC
3.6
6
8.4
nC
VGS=10V, VDS=15V, ID=20A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
7.8
9.8
11.7
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
14
17.6
21
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
7
ns
10
ns
22
ns
5
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: November 2010
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Page 2 of 7
AON6416
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
110
10V
100
6V
90
VDS=5V
7V
80
5V
80
60
60
ID(A)
ID (A)
70
4.5V
50
40
40
4V
30
125°C
20
20
25°C
VGS=3.5V
10
0
0
0
1
2
3
4
0
5
2
3
4
5
6
1.6
18
14
Normalized On-Resistance
16
RDS(ON) (mΩ )
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
12
10
8
6
VGS=10V
4
2
VGS=10V
ID=20A
1.4
17
5
VGS=4.5V
2
ID=20A
10
1.2
1
0.8
0
0
5
0
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
30
25
50
1.0E+02
ID=20A
1.0E+01
25
40
IS (A)
RDS(ON) (mΩ )
1.0E+00
20
15
125°C
1.0E-01
25°C
1.0E-02
125°C
10
1.0E-03
5
1.0E-04
25°C
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: November 2010
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 7
AON6416
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1800
10
VDS=15V
ID=20A
1600
1400
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
1200
1000
800
600
Coss
400
2
200
0
0
5
10
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
25
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
200
1000.0
RDS(ON)
limited
10.0
100µs
1ms
10ms
DC
1.0
0.1
160
10µs
TJ(Max)=150°C
TC=25°C
Power (W)
10µs
100.0
ID (Amps)
Crss
0
TJ(Max)=150°C
TC=25°C
17
5
2
10
120
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=3.4°C/W
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: November 2010
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Page 4 of 7
AON6416
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
TA=25°C
60
Power Dissipation (W)
IAR (A) Peak Avalanche Current
70
50
40
TA=100°C
30
TA=150°C
20
10
30
20
10
TA=125°C
0
0
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
25
10000
20
1000
Power (W)
Current rating ID(A)
TA=25°C
15
10
17
5
2
10
100
10
5
1
0.00001
0
0
25
50
75
100
125
Zθ JA Normalized Transient
Thermal Resistance
10
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
0
18
TCASE (°C)
Figure 14: Current De-rating (Note F)
10
0.001
150
40
RθJA=53°C/W
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1: November 2010
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Page 5 of 7
AON6416
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Qrr (nC)
15
25ºC
Qrr
10
12
10
10
8
8
6
125ºC
4
3
di/dt=800A/µs
2
6
1.5
4
2
1
125ºC
S
25ºC
2.5
25ºC
trr
Irm
5
125ºC
S
125ºC
20
12
trr (ns)
di/dt=800A/µs
Irm (A)
25
2
0.5
25ºC
0
0
0
5
10
15
20
25
0
30
0
0
IS (A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
20
15
20
30
2.5
Is=20A
8
12
2
125ºC
4
trr
9
1.5
S
6
trr (ns)
25ºC
10
Irm (A)
125ºC
Qrr
25
15
125ºC
15
Qrr (nC)
10
IS (A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
10
Is=20A
5
6
125º
25ºC
1
S
5
25ºC
2
3
0
0
0
200
400
600
800
1000
0
0
0
di/dt (A/µ
µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Rev 1: November 2010
0.5
25ºC
Irm
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200
400
600
800
1000
di/dt (A/µ
µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Page 6 of 7
AON6416
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 1: November 2010
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 7 of 7