AON6452 100V N-Channel MOSFET SDMOS TM General Description Product Summary VDS The AON6452 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. ID (at VGS=10V) 100V 26A RDS(ON) (at VGS=10V) < 25mΩ RDS(ON) (at VGS = 7V) < 31mΩ 100% UIS Tested 100% Rg Tested D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS VGS Gate-Source Voltage TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C V A 60 6.5 IDSM TA=70°C ±25 17 IDM TA=25°C Units V 26 ID TC=100°C Maximum 100 A 5.0 Avalanche Current C IAR 28 A Repetitive avalanche energy L=0.1mH C TC=25°C EAR 39 mJ Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C Rev2: May 2012 2 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.25 -55 to 150 TJ, TSTG Symbol t ≤ 10s W 14 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 35 PD Typ 24 53 2.7 °C Max 30 64 3.5 Units °C/W °C/W °C/W Page 1 of 7 AON6452 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 100 10 TJ=55°C 50 IGSS Gate-Body leakage current VDS=0V, VGS= ±25V Gate Threshold Voltage VDS=VGS ID=250µA 2 ID(ON) On state drain current VGS=10V, VDS=5V 100 nA 4 V 20.5 25 36 43 VGS=7V, ID=15A 25 31 mΩ 37 1 V 40 A TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge A 0.66 mΩ S 1400 1770 2200 pF VGS=0V, VDS=50V, f=1MHz 115 165 214 pF 33 55 80 pF VGS=0V, VDS=0V, f=1MHz 0.3 0.65 1.0 Ω 14 28 42 nC 4 9 14 nC 10 14 nC SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs µA 100 Static Drain-Source On-Resistance Output Capacitance Units 3.2 VGS=10V, ID=20A Coss Max V VDS=100V, VGS=0V VGS(th) RDS(ON) Typ VGS=10V, VDS=50V, ID=20A Qgd Gate Drain Charge tD(on) Turn-On DelayTime 6 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 20 29 37 Qrr 25 36 46 trr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Time 12 20 26 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 60 82 110 VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 12 ns 4 ns 17 ns 5 ns ns nC ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2: May 2012 www.aosmd.com Page 2 of 7 AON6452 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 8V 10V 7V 50 40 ID(A) 40 ID (A) VDS=5V 50 6.5V 30 125°C 30 20 20 25°C VGS=6V 10 10 0 0 0 1 2 3 4 3 5 40 Normalized On-Resistance On VGS=7V 30 25 VGS=10V 20 15 10 6 7 2 VGS=10V ID=20A 1.8 1.6 1.4 1.2 VGS=7V ID=15A 1 0.8 0 5 10 15 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 45 1.0E+02 ID=20A 1.0E+01 40 35 125°C 30 IS (A) 1.0E+00 RDS(ON) (mΩ Ω) 5 2.2 35 RDS(ON) (mΩ Ω) 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 25 25°C 1.0E-04 20 1.0E-05 0.0 15 6 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 2: May 2012 7 www.aosmd.com 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AON6452 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2500 VDS=50V ID=20A 2000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 1500 1000 Coss 500 0 Crss 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 20 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 100 1000 RDS(ON) 10.0 10µs 100µs DC 1.0 1ms 10ms TJ(Max)=150°C TC=25°C 0.1 0.0 Power (W) ID (Amps) TJ(Max)=150°C TC=25°C 10µs 100.0 10 0.01 0.1 1 10 100 0.0001 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 Zθ JC Normalized Transient Thermal Resistance 17 5 2 10 100 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0.001 0.01 0.1 1 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=3.5°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 2: May 2012 www.aosmd.com Page 4 of 7 AON6452 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 Power Dissipation (W) IAR (A) Peak Avalanche Current 50 TA=25°C TA=100°C TA=150°C TA=125°C 40 30 20 10 0 10 0 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 40 10000 30 1000 Power (W) Current rating ID(A) 0.000001 20 10 25 50 75 100 125 TCASE (° °C) Figure 13: Power De-rating (Note F) 100 150 TA=25°C 10 0 1 0 25 50 75 100 125 TCASE (° °C) Figure 14: Current De-rating (Note F) 150 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=64°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Rev 2: May 2012 www.aosmd.com Page 5 of 7 AON6452 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 300 15 24 2 125ºC di/dt=800A/µs 125ºC 250 di/dt=800A/µs 20 12 1.6 6 125ºC S 3 50 0 10 15 20 25 0.4 25ºC 0 30 0 IS (A) -RoHS Compliant Figure 17: Diode Reverse Recovery Charge and Peak -Halogen Free Current vs. Conduction Current 150 30 Is=20A 10 15 0 20 25 30 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 5 Is=20A 25 125ºC 14 Qrr 60 125ºC 10 25ºC 30 0 -2 0 200 400 600 800 1000 di/dt (A/µ µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev 2: May 2012 15 3 2.5 2 10 1.5 125ºC 6 2 Irm trr 25ºC trr (ns) 25ºC 3.5 20 18 90 4.5 4 22 Irm (A) Qrr (nC) 5 30 26 125ºC 120 125ºC 4 25ºC Qrr 5 0.8 8 100 0 1.2 25ºC S 150 trr 12 S 9 25ºC Irm trr (ns) 200 Irm (A) Qrr (nC) 16 1 25ºC 5 S 0 0.5 0 0 200 400 600 800 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt www.aosmd.com Page 6 of 7 AON6452 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 2: May 2012 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7