Datasheet

AON6452
100V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
VDS
The AON6452 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well
suited for PWM, load switching and general purpose
applications.
ID (at VGS=10V)
100V
26A
RDS(ON) (at VGS=10V)
< 25mΩ
RDS(ON) (at VGS = 7V)
< 31mΩ
100% UIS Tested
100% Rg Tested
D
DFN5X6
Top View
Top View
Bottom View
1
8
2
7
3
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
C
V
A
60
6.5
IDSM
TA=70°C
±25
17
IDM
TA=25°C
Units
V
26
ID
TC=100°C
Maximum
100
A
5.0
Avalanche Current C
IAR
28
A
Repetitive avalanche energy L=0.1mH C
TC=25°C
EAR
39
mJ
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
TA=25°C
Rev2: May 2012
2
Steady-State
Steady-State
RθJA
RθJC
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W
1.25
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
W
14
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
35
PD
Typ
24
53
2.7
°C
Max
30
64
3.5
Units
°C/W
°C/W
°C/W
Page 1 of 7
AON6452
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
100
10
TJ=55°C
50
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±25V
Gate Threshold Voltage
VDS=VGS ID=250µA
2
ID(ON)
On state drain current
VGS=10V, VDS=5V
100
nA
4
V
20.5
25
36
43
VGS=7V, ID=15A
25
31
mΩ
37
1
V
40
A
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
A
0.66
mΩ
S
1400
1770
2200
pF
VGS=0V, VDS=50V, f=1MHz
115
165
214
pF
33
55
80
pF
VGS=0V, VDS=0V, f=1MHz
0.3
0.65
1.0
Ω
14
28
42
nC
4
9
14
nC
10
14
nC
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
µA
100
Static Drain-Source On-Resistance
Output Capacitance
Units
3.2
VGS=10V, ID=20A
Coss
Max
V
VDS=100V, VGS=0V
VGS(th)
RDS(ON)
Typ
VGS=10V, VDS=50V, ID=20A
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
6
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=100A/µs
20
29
37
Qrr
25
36
46
trr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
12
20
26
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
60
82
110
VGS=10V, VDS=50V, RL=2.5Ω,
RGEN=3Ω
12
ns
4
ns
17
ns
5
ns
ns
nC
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: May 2012
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Page 2 of 7
AON6452
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
8V
10V
7V
50
40
ID(A)
40
ID (A)
VDS=5V
50
6.5V
30
125°C
30
20
20
25°C
VGS=6V
10
10
0
0
0
1
2
3
4
3
5
40
Normalized On-Resistance
On
VGS=7V
30
25
VGS=10V
20
15
10
6
7
2
VGS=10V
ID=20A
1.8
1.6
1.4
1.2
VGS=7V
ID=15A
1
0.8
0
5
10
15
20
25
30
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
45
1.0E+02
ID=20A
1.0E+01
40
35
125°C
30
IS (A)
1.0E+00
RDS(ON) (mΩ
Ω)
5
2.2
35
RDS(ON) (mΩ
Ω)
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
25
25°C
1.0E-04
20
1.0E-05
0.0
15
6
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2: May 2012
7
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0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 7
AON6452
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
VDS=50V
ID=20A
2000
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2
1500
1000
Coss
500
0
Crss
0
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
0
20
40
60
80
VDS (Volts)
Figure 8: Capacitance Characteristics
100
1000
RDS(ON)
10.0
10µs
100µs
DC
1.0
1ms
10ms
TJ(Max)=150°C
TC=25°C
0.1
0.0
Power (W)
ID (Amps)
TJ(Max)=150°C
TC=25°C
10µs
100.0
10
0.01
0.1
1
10
100
0.0001
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Zθ JC Normalized Transient
Thermal Resistance
17
5
2
10
100
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0.001
0.01
0.1
1
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=3.5°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2: May 2012
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Page 4 of 7
AON6452
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
Power Dissipation (W)
IAR (A) Peak Avalanche Current
50
TA=25°C
TA=100°C
TA=150°C
TA=125°C
40
30
20
10
0
10
0
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
(Note C)
40
10000
30
1000
Power (W)
Current rating ID(A)
0.000001
20
10
25
50
75
100
125
TCASE (°
°C)
Figure 13: Power De-rating (Note F)
100
150
TA=25°C
10
0
1
0
25
50
75
100
125
TCASE (°
°C)
Figure 14: Current De-rating (Note F)
150
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=64°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Rev 2: May 2012
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Page 5 of 7
AON6452
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
300
15
24
2
125ºC
di/dt=800A/µs
125ºC
250
di/dt=800A/µs
20
12
1.6
6
125ºC
S
3
50
0
10
15
20
25
0.4
25ºC
0
30
0
IS (A)
-RoHS Compliant
Figure 17: Diode Reverse Recovery Charge and Peak
-Halogen Free Current vs. Conduction Current
150
30
Is=20A
10
15
0
20
25
30
IS (A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
5
Is=20A
25
125ºC
14
Qrr
60
125ºC
10
25ºC
30
0
-2
0
200
400
600
800
1000
di/dt (A/µ
µs)
Figure 19: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
Rev 2: May 2012
15
3
2.5
2
10
1.5
125ºC
6
2
Irm
trr
25ºC
trr (ns)
25ºC
3.5
20
18
90
4.5
4
22
Irm (A)
Qrr (nC)
5
30
26
125ºC
120
125ºC
4
25ºC
Qrr
5
0.8
8
100
0
1.2
25ºC
S
150
trr
12
S
9
25ºC
Irm
trr (ns)
200
Irm (A)
Qrr (nC)
16
1
25ºC
5
S
0
0.5
0
0
200
400
600
800
1000
di/dt (A/µ
µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
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Page 6 of 7
AON6452
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 2: May 2012
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 7 of 7