AON6448 80V N-Channel MOSFET SDMOS TM General Description Product Summary VDS The AON6448 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. ID (at VGS=10V) 80V 65A RDS(ON) (at VGS=10V) < 9.6mΩ RDS(ON) (at VGS = 7V) < 12mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C V A 138 11 IDSM TA=70°C ±25 41 IDM TA=25°C Units V 65 ID TC=100°C Maximum 80 A 9.0 Avalanche Current C IAS, IAR 50 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 125 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 3: April 2011 2.5 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.6 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 PD TC=100°C -55 to 150 Typ 14 40 1 °C Max 17 50 1.5 Units °C/W °C/W °C/W Page 1 of 7 AON6448 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V 10 IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2.7 ID(ON) On state drain current VGS=10V, VDS=5V 140 TJ=55°C 50 VDS=0V, VGS= ±25V 100 VGS=10V, ID=10A 16 VGS=7V, ID=10A 9.6 12 mΩ VDS=5V, ID=10A 30 1 V 85 A 3100 pF Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime 0.65 2100 VGS=0V, VDS=40V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs V A 13.3 gFS Rg 3.7 nA 9.6 Static Drain-Source On-Resistance Output Capacitance 3.2 µA 7.9 RDS(ON) Reverse Transfer Capacitance Units V VDS=80V, VGS=0V Zero Gate Voltage Drain Current Coss Max 80 IDSS Crss Typ VGS=10V, VDS=40V, ID=10A 2600 mΩ S 240 340 440 pF 70 120 170 pF 0.4 0.8 1.2 Ω 35 44 53 nC 11 14 17 nC 8 14 20 nC 18 VGS=10V, VDS=40V, RL=4Ω, RGEN=3Ω ns 10 ns 24.5 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs 12 17 22 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 45 65 85 5.2 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 3: April 2011 www.aosmd.com Page 2 of 7 AON6448 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 140 10V 120 7.5V 9V 8.5V 7V VDS=5V 120 8V 100 100 80 ID(A) ID (A) 6.5V 60 6V 80 60 40 40 VGS=5.5V 20 125°C 25°C 20 0 0 0 1 2 3 4 0 5 11 6 8 10 Normalized On-Resistance 2.2 VGS=7V 10 RDS(ON) (mΩ ) 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 9 8 VGS=10V 7 2 VGS=10V ID=10A 1.8 1.6 1.4 VGS=7V ID=10A 1.2 17 5 2 10 1 0.8 6 0 5 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 10 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 20 1.0E+02 ID=10A 18 1.0E+01 40 1.0E+00 16 125°C 14 IS (A) RDS(ON) (mΩ ) 2 12 1.0E-02 10 1.0E-03 25°C 1.0E-04 25°C 8 125°C 1.0E-01 1.0E-05 6 4 8 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 3: April 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AON6448 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4500 10 VDS=40V ID=10A 4000 3500 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 3000 2500 2000 1500 1000 2 Coss 500 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 0 50 10 20 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 60 400 1000.0 RDS(ON) limited 10.0 100µs DC 1ms 1.0 320 TJ(Max)=150°C TC=25°C 280 17 5 2 10 240 200 160 120 TJ(Max)=150°C TC=25°C 0.1 360 10µs Power (W) 10µs 100.0 ID (Amps) Crss 0 0 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 Zθ JC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 3: April 2011 www.aosmd.com Page 4 of 7 AON6448 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 90 80 50 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 60 40 30 TA=100°C 20 TA=125°C TA=150°C 10 70 60 50 40 30 20 10 0 0 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 70 TA=25°C 1000 60 Power (W) Current rating ID(A) 150 10000 80 50 40 17 5 2 10 100 30 10 20 10 1 0.0001 0 0 25 50 75 100 125 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 0.01 1 100 10000 0 18 150 TCASE (°C) Figure 14: Current De-rating (Note F) Zθ JA Normalized Transient Thermal Resistance 125 TCASE (°C) Figure 13: Power De-rating (Note F) Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=50°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 3: April 2011 www.aosmd.com Page 5 of 7 AON6448 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 180 15 125ºC 160 24 3 di/dt=800A/µs 13 125ºC 20 2.5 11 7 120 125ºC Qrr 15 20 25 0 0 25 25ºC 2 125ºC 25ºC 1.5 trr S 15 1 125º 3 0.5 5 Qrr S 25ºC 40 0 200 400 600 800 1000 0 0 0 di/dt (A/µ µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev 3: April 2011 30 10 Irm 0 25 20 6 60 20 2.5 9 trr (ns) Qrr (nC) 25ºC 100 80 15 Is=10A 125ºC 120 10 30 Irm (A) 140 5 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 12 125ºC 0.5 0 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current Is=10A 125ºC 25ºC 30 160 1.5 1 S 4 -1 10 25ºC 8 1 60 5 trr 3 25ºC di/dt=800A/µs 0 2 12 5 100 80 16 9 S 25ºC trr (ns) Irm Irm (A) Qrr (nC) 140 www.aosmd.com 200 400 600 800 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 6 of 7 AON6448 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 3: April 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7