Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 (0.7) 15.0±0.3 (3.2) 11.0±0.2 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip 16.2±0.5 • Excellent collector current IC characteristics of forward current transfer ratio hFE • Wide safe operation area • High transition frequency fT • Full-pack package which can be installed to the heat sink with one screw 21.0±0.5 ■ Features 2.0±0.2 5.45±0.3 10.9±0.5 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −100 V Collector-emitter voltage (Base open) VCEO −100 V Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −5 A Peak collector current ICP −8 A PC 60 W Ta = 25°C 0.6±0.2 1.1±0.1 ■ Absolute Maximum Ratings TC = 25°C Collector power dissipation 2.0±0.1 1 2 1: Base 2: Collector 3: Emitter EIAJ: SC-92 TOP-3F-A1 Package 3 3 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Conditions Max Unit −1.8 V VCB = −100 V, IE = 0 −50 µA VEB = −3 V, IC = 0 −50 µA Base-emitter voltage VBE VCE = −5 V, IC = −3 A Collector-base cutoff current (Emitter open) ICBO Emitter-base cutoff current (Collector open) IEBO hFE1 Forward current transfer ratio Collector-emitter saturation voltage Transition frequency VCE = −5 V, IC = −20 mA 20 hFE2 * VCE = −5 V, IC = −1 A 40 hFE3 VCE = −5 V, IC = −3 A 20 VCE(sat) IC = −3 A, IB = − 0.3 A fT Collector output capacitance (Common base, input open circuited) Min Cob Typ 200 −2.0 V VCE = −5 V, IC = − 0.5 A, f = 1 MHz 20 MHz VCB = −10 V, IE = 0, f = 1 MHz 170 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R Q P hFE2 40 to 80 60 to 120 100 to 200 Publication date: March 2003 SJD00038BED 1 2SB1054 PC Ta 40 20 IC VBE −6 TC=25˚C VCE=–5V IB=–80mA −5 (2) TC=100˚C –60mA –50mA −4 –40mA −3 –30mA –20mA −2 –10mA −1 25˚C −5 –70mA Collector current IC (A) (1) 60 IC VCE −6 (1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)Without heat sink (PC=3.0W) Collector current IC (A) Collector power dissipation PC (W) 80 –25˚C −4 −3 −2 −1 –5mA (3) 0 0 40 80 120 160 −2 0 VCE(sat) IC Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) 104 IC/IB=10 −10 TC=100˚C 25˚C –25˚C − 0.01 − 0.01 − 0.1 −8 −10 −1 25˚C –25˚C 10 −1 − 0.1 −10 −100 − 0.1 −1 −10 Collector current IC (A) (1)PT=10V×0.3A(3W) and without heat sink (2)PT=10V×1A(10W) and with a 100×100×2mm Al heat sink −1 000 102 (1) 10 (2) 1 10−1 10−3 10−2 10−1 1 10 Time t (s) Collector-emitter voltage VCE (V) 2 1 103 Thermal resistance Rth (°C/W) Collector current IC (A) t=1ms SJD00038BED −2.0 10 Rth t t=10ms − 0.01 −1 −1.6 100 0.1 − 0.01 −10 Collector current IC (A) −10 ICP −1 −1.2 VCE=–5V f=1MHz TC=25˚C TC=100˚C − 0.1 − 0.8 fT I C 102 1 − 0.01 −10 Non repetitive pulse TC=25˚C DC − 0.4 1 000 VCE=–5V Safe operation area IC 0 Base-emitter voltage VBE (V) 103 Collector current IC (A) −100 0 −12 hFE IC −100 − 0.1 −6 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) −1 −4 Transition frequency fT (MHz) 0 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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