Power Transistors 2SB0940 (2SB940), 2SB0940A (2SB940A) Silicon PNP epitaxial planar type For power amplification For TV vertical deflection output Complementary to 2SD1264, 2SD1264A 14.0±0.5 • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC • Full-pack package which can be installed to the heat sink with one screw ■ Absolute Maximum Ratings TC = 25°C 4.2±0.2 5.5±0.2 7.5±0.2 4.2±0.2 2.7±0.2 φ 3.1±0.1 1.4±0.1 Solder Dip (4.0) ■ Features 16.7±0.3 0.7±0.1 Unit: mm 10.0±0.2 Symbol Rating Unit 2.54±0.3 Collector-base voltage (Emitter open) VCBO −200 V 5.08±0.5 Collector-emitter voltage 2SB0940 (Base open) 2SB0940A VCEO −150 V Emitter-base voltage (Collector open) VEBO −6 V Collector current IC −2 A Peak collector current ICP −3 A PC 30 W Collector power Ta = 25°C dissipation 0.5+0.2 –0.1 0.8±0.1 Parameter 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package 1 2 3 −180 1.3±0.2 2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −50 µA, IE = 0 −200 V VCEO IC = −5 mA, IB = 0 −150 V 2SB0940 Collector-emitter voltage (Base open) Conditions Emitter-base voltage (Collector open) VEBO IE = −500 µA, IC = 0 Base-emitter voltage VBE VCE = −10 V, IC = −400 mA Collector-base cutoff current (Emitter open) ICBO Emitter-base cutoff current (Collector open) IEBO Transition frequency Max −6 Unit V VCB = −200 V, IE = 0 −50 µA VEB = −4 V, IC = 0 −50 µA 240 VCE = −10 V, IC = −150 mA 60 VCE = −10 V, IC = −400 mA 50 VCE(sat) IC = −500 mA, IB = −50 mA * VCE = −10 V, IC = − 0.5 A, f = 10 MHz fT V −1 hFE2 hFE1 Collector-emitter saturation voltage Typ −180 2SB0940A Forward current transfer ratio Min −1 30 V MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q P hFE1 60 to 140 100 to 240 Note) The part numbers in the parenthesis show conventional part number. Publication date: February 2003 SJD00021BED 1 2SB0940, 2SB0940A PC Ta IC VCE 40 30 TC=25˚C (1) VCE=–10V IB=–4.5mA −500 −1.6 –4.0mA –3.5mA –3.0mA −400 –2.5mA −300 20 −2.0 Collector current IC (A) (1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)With a 50×50×2mm Al heat sink (4)Without heat sink (PC=2W) Collector current IC (A) Collector power dissipation PC (W) IC VBE −600 50 –2.0mA (2) –1.0mA −100 (3) −1.2 − 0.8 –1.5mA −200 10 25˚C TC=100˚C –25˚C − 0.4 –0.5mA (4) 0 0 40 80 120 0 160 Ambient temperature Ta (°C) −2 0 −4 −8 25˚C –25˚C − 0.1 25˚C 102 –25˚C 10 1 − 0.01 −1 − 0.1 −1 t=0.5ms t=5ms t=1ms DC −100 2SB0940A 2SB0940 − 0.1 −10 − 0.1 −1 −10 Collector current IC (A) −1 000 (1)Without heat sink (2)With a 100×100×2mm Al heat sink 102 (1) (2) 10 1 10−1 10−2 10−3 10−2 Collector-emitter voltage VCE (V) 2 10 1 − 0.01 −10 103 Thermal resistance Rth (°C/W) Collector current IC (A) ICP 10−1 1 Time t (s) SJD00021BED −1.0 102 Rth t −10 − 0.01 −1 − 0.8 103 Collector current IC (A) Non repetitive pulse TC=25˚C −1 − 0.6 VCE=–10V f=10MHz TC=25˚C TC=100˚C Safe operation area IC − 0.4 fT I C 103 Collector current IC (A) −100 − 0.2 104 Transition frequency fT (MHz) TC=100˚C Forward current transfer ratio hFE −1 − 0.1 0 Base-emitter voltage VBE (V) VCE=–10V IC/IB=10 − 0.01 − 0.01 0 −12 hFE IC 104 −10 −10 Collector-emitter voltage VCE (V) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) −6 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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