Power Transistors 2SB0930 (2SB930), 2SB0930A (2SB930A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A Unit: mm Rating Unit VCBO −60 V 2 −80 2SB0930A −60 V Collector-emitter voltage 2SB0930 (Base open) 2SB0930A VCEO Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −4 A Peak collector current ICP −8 A Collector power dissipation PC 40 W −80 Ta = 25°C 14.4±0.5 3.0+0.4 –0.2 4.4±0.5 1.5+0 –0.4 1 (1.5) Symbol 2SB0930 0 to 0.4 0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 (8.5) (6.0) 1.3 3 (7.6) Parameter Collector-base voltage (Emitter open) 1.0±0.1 2.0±0.5 ■ Absolute Maximum Ratings TC = 25°C 6.0±0.2 4.4±0.5 • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 3.4±0.3 10.0±0.3 1.5±0.1 ■ Features 8.5±0.2 (6.5) 1 : Base 2 : Collector 3 : Emitter N-G1 Package Note) Self-supported type package is also prepared. 1.3 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) 2SB0930 Collector-emitter cutoff current (E-B short) 2SB0930 Collector-emitter cutoff current (Base open) 2SB0930 Conditions −400 VCE = −80 V, VBE = 0 −400 VCE = −30 V, IB = 0 −700 VCE = −60 V, IB = 0 −700 VEB = −5 V, IC = 0 −1 mA 250 V −80 ICEO IEBO µA µA VCE = −4 V, IC = −1 A 70 hFE2 VCE = −4 V, IC = −3 A 15 VBE VCE = −4 V, IC = −3 A −2.0 V VCE(sat) IC = −4 A, IB = −0.4 A −1.5 V hFE1 Collector-emitter saturation voltage −60 Unit VCE = −60 V, VBE = 0 2SB0930A Base-emitter voltage Max ICES 2SB0930A Forward current transfer ratio Typ IC = −30 mA, IB = 0 2SB0930A Emitter-base cutoff current (Collector open) Min VCEO * Transition frequency fT VCE = −10 V, IC = − 0.5 A, f = 10 MHz 20 MHz Turn-on time ton IC = −4 A, 0.2 µs Storage time tstg IB1 = − 0.4 A, IB2 = 0.4 A 0.5 µs Fall time tf VCC = −50 V 0.2 µs Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q P hFE1 70 to 150 120 to 250 Publication date: April 2003 Note) The part number in the parenthesis shows conventional part number. SJD00012BED 1 2SB0930, 2SB0930A PC Ta IC VCE −6 40 (1) 30 20 IC VBE IB = −120 mA −4 −60 mA −3 −40 mA −20 mA −2 VCE = −4 V −8 −80 mA −10 mA −6 TC = 100°C 25°C −25°C −4 −2 −8 mA −1 (2) TC = 25°C −100 mA −5 10 −10 Collector current IC (A) (1)TC = Ta (2)With a 50 mm × 50 mm × 2 mm Al heat sink (3)Without heat sink (PC = 1.3 W) Collector current IC (A) Collector power dissipation PC (W) 50 −5 mA (3) 0 0 40 80 120 160 −2 0 −4 VCE(sat) IC Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) −10 −1 25°C TC = 100°C −25°C − 0.01 − 0.01 − 0.1 −10 −1 TC = 100°C 25°C −25°C 10 1 − 0.01 −10 − 0.1 −1 t = 10 ms t = 300 ms − 0.1 − 0.01 −1 −10 −100 10 − 0.1 −1 −10 Collector current IC (A) −1 000 (1)Without heat sink (2)With a 50 mm × 50 mm × 2 mm Al heat sink (1) 102 (2) 10 1 10−1 10−2 10−4 10−3 10−2 10−1 1 Time t (s) Collector-emitter voltage VCE (V) 2 102 1 − 0.01 −10 103 Thermal resistance Rth (°C/W) Collector current IC (A) t = 1 ms SJD00012BED −2.0 VCE = −5 V f = 1 MHz TC = 25°C Rth t ICP −1 −1.6 103 Collector current IC (A) Non repetitive pulse TC = 25°C IC −1.2 104 VCE = −4 V 102 − 0.8 fT I C Safe operation area −10 − 0.4 0 Base-emitter voltage VBE (V) 103 Collector current IC (A) −100 0 −12 hFE IC 104 IC / IB = 10 − 0.1 −8 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) −100 −6 Transition frequency fT (MHz) 0 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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