Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1156 5.0±0.2 ■ Absolute Maximum Ratings TC = 25°C 15.0±0.2 φ 3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 130 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open) VEBO 7 V Collector current IC 20 A Peak collector current ICP 30 A Collector power dissipation PC 100 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Ta = 25°C (3.2) 11.0±0.2 (3.5) Solder Dip • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one screw 16.2±0.5 ■ Features 21.0±0.5 (0.7) 15.0±0.3 10.9±0.5 1 2 1: Base 2: Collector 3: Emitter EIAJ: SC-92 TOP-3F-A1 Package 3 3.0 ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = 10 mA, IB = 0 Collector-base cutoff current (Emitter open) ICBO VCB = 100 V, IE = 0 Emitter-base cutoff current (Collector open) IEBO VEB = 5 V, IC = 0 Forward current transfer ratio hFE1 VCE = 2 V, IC = 0.1 A 45 Base-emitter saturation voltage Min VCE = 2 V, IC = 3 A 90 VCE = 2 V, IC = 10 A 30 * Typ Max Unit 10 µA 50 µA 80 hFE3 hFE2 Collector-emitter saturation voltage Conditions V 260 VCE(sat)1 IC = 8 A, IB = 0.4 A 0.5 VCE(sat)2 IC = 20 A, IB = 2 A 1.5 VBE(sat)1 IC = 8 A, IB = 0.4 A 1.5 VBE(sat)2 IC = 20 A, IB = 2 A 2.5 V V Transition frequency fT VCE = 10 V, IC = 0.5 A, f = 1 MHz 20 MHz Turn-on time ton IC = 8 A, IB1 = 0.8 A, IB2 = − 0.8 A 0.5 µs Storage time tstg VCC = 50 V 2.0 µs 0.2 µs Fall time tf Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q P hFE2 90 to 180 130 to 260 Publication date: September 2003 SJD00211BED 1 2SD1707 PC Ta IC VCE IB=200mA 16 80 60 40 140mA 120mA 12 100mA 80mA 8 60mA 40mA 4 (2) 20 Collector-emitter saturation voltage VCE(sat) (V) 100 TC=25˚C (1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)Without heat sink (1) Collector current IC (A) Collector power dissipation PC (W) VCE(sat) IC 20 120 20mA (3) 0 25 50 75 100 125 150 Ambient temperature Ta (°C) 0 2 IC/IB=10 Base-emitter saturation voltage VBE(sat) (V) Collector-emitter saturation voltage VCE(sat) (V) 10 TC=100˚C 25˚C –25˚C 0.1 0.01 0.1 1 0.01 0.1 1 VCE=2V 1 000 10 TC=–25˚C 1 100˚C 25˚C 0.1 fT I C 0.1 1 TC=100˚C 25˚C –25˚C 100 10 1 0.1 10 Turn-on time ton , Storage time tstg , Fall time tf (µs) 100 10 1 1 Collector current IC (A) 10 100 IC 1 ton tf 0.1 2 4 6 Collector current IC (A) SJD00211BED 8 t=1ms 10 t=10ms DC 1 0.1 0.01 0 Non repetitive pulse TC=25˚C ICP tstg 0.01 10 Safe operation area 100 Pulsed tw=1ms Duty cycle=1% IC/IB=10(IB1=–IB2) VCC=50V TC=25˚C 10 1 Collector current IC (A) ton , tstg , tf IC VCE=10V f=1MHz Ta=25˚C 10 hFE IC Collector current IC (A) 1000 0.1 (2) 0.1 IC/IB=10 0.01 0.01 10 12 (1) VBE(sat) IC 100 1 Transition frequency fT (MHz) 8 1 Collector current IC (A) Collector current IC (A) 2 6 (1) IC/IB=10 (2) IC/IB=20 TC=25˚C Collector-emitter voltage VCE (V) VCE(sat) IC 10 0.1 0.01 4 Forward current transfer ratio hFE 0 Collector current IC (A) 0 10 1 10 100 1 000 Collector-emitter voltage VCE (V) 2SD1707 Rth t 104 Thermal resistance Rth (°C/W) Note: Rth was measured at Ta=25˚C and under natural convection. (1)PT=10V×0.2A(2W) and without heat sink (2)PT=10V×1.0A(10W) and with a 100×100×2mm Al heat sink 103 102 (1) 10 (2) 1 10−1 10−4 10−3 10−2 10−1 1 10 102 103 104 Time t (s) SJD00211BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. 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